键合氢对GDa—Si:H薄膜光致发光性质的影响

测量了在不同衬底温度下制备的GDa-Si:H膜的光致发光谱和光吸收谱。实验发现键合氢含量的增加导致光致发光峰强度、发光峰能量、发光带半宽度、Stokes位移和热淬灭的增大。由此导出:(1)键合氢不仅能消除无辐射复合中心,而且能产生辐射复合中心;(2)随着键合氢含量的增加电子-声子相互作用增强,带尾宽度缓慢变窄。 关键词：     

HL-1装置等离子体特性的初步研究

HL-1装置在环向磁场2.3T下运行,获得135kA平衡稳定等离子体,平顶时间160ms。实验表明,环向磁场杂散分量约为纵场的万分之一,导体壳和平衡场基本上能保证等离子体的平衡。观察到的电子温度约500eV,平均电子密度2.8×10~(13)cm~(-3),能量约束时间10ms,有效电荷数小于3,最低稳定运行安全因子2.5,最长放电持续时间1040ms。在对MHD稳定性进行观察的基础上,确定了稳定运行区域;极限密度服从Murakami定标律。     

连续CO2激光辐照加热不锈钢时的反常温度涨落特性

研究了在连续CO₂激光辐照下不锈钢表面的温度涨落特性.实验中用国产HWRX-Ⅲ型红外快速热像仪测量了不锈钢表面的升温过程及温度涨落.发现不锈钢在激光辐照下随辐照时间的增加和温度的升高,其温度涨落的幅度基本保持不变.这与理论预言不符,也不同于已研究过的铝、低碳钢、环氧树脂和有机玻璃等材料.随辐照时间的增加,温度的升高,其温度涨落的幅度基本保持不变.这一特性是由不锈钢的热学参数如热传导率、热扩散率随温度变化的规律所决定的.详细探讨了材料热学参数随温度的变化对温度涨落的影响. 关键词：     

SiH4激光等离子体内H谱线的线型研究

本工作利用光学多道分析仪(OMA Ⅲ)测量了脉冲TEA CO₂激光诱发的SiH₄等离子体内H Balmer系的H_α,H_σ和H_γ线的线型。结果表明,三条谱线的FWHM(半值全宽度)随跃迁上能级的主量子数的增加而增加,即△λ_1/2(H_α)<△λ_1/2(H_β)<△λ_1/2(H_γ)。通过对等离子体内各类加宽机制的讨论,得出等离子体内谱线的主要加宽机制为Stark加宽。由H_α线的实验线型与Stark加宽理论线型的拟合,得到等离子体的两个重要参量,平均电子密度N≈10¹⁷cm^-3,电子温度T≈40 000K。由H_β线的时间分辨测量得到等离子体的电子密度随时间的演变曲线。 关键词：     

多电子原子和离子的等电子系参数的研究 (Ⅰ)——k系数的引入与节点数的校正

从分析比较标准量子亏损理论与最弱受约束电子势模型理论中能量的不同表征方式出发,试引入可以反映原子(离子)体系中屏蔽效应的k校正系数。不同方次的平均值及其它计算结果表明,引入的k系数,不但使直接使用有关等电子系参数进行里德伯系性质的描述很准确,而且在一定程度上反映了这两种系列之间的区别和联系。关于价电子轨道波函数节点数的校正,亦是本文的核心内容之一。 关键词：     

用深能级瞬态谱方法研究赝晶Si/Ge0.25Si0.75/Si单量子阱的价带偏移

应变的Ge_xSi_1-x层和未应变的硅层间的能带偏移主要是价带偏移。量子阱中载流子的热发射能与界面的能带偏移有着密切的关系。本文用深能级瞬态谱(DLTS)研究分子束外延生长的p型Si/Ge_0.25Si_0.75/Si单量子阱的价带偏移,阱宽为15nm,考虑到电场的影响和量子阱中第一子能级的位置,对从DLTS得到的热发射能进行适当的修正,可以计算出Si/Ge_0.25Si_0.75/S 关键词：     

X射线三晶衍射研究YBa2Cu3Oy超导薄膜

应用X射线三晶衍射对LaAlO₃衬底上生长的YBa₂Cu₃O_y薄膜中的应力水平、存在的主要缺陷,以及薄膜与衬底的失配和取向关系等进行了研究。结果表明,薄膜在衬底上几乎完全松弛,应力很小,薄膜存在较严重的晶格取向差缺陷,这是影响薄膜晶体结构完整性的主要因素。此外,衬底与薄膜在垂直于表面和平行于表面方向都存在取向差。 关键词：     

C60和C60／C70的激光脱附飞行时间质谱分析

采用激光脱附并直接测量离子的方法对实验室提取的C_(60)/C_(70)以及进一步分离得到的纯C_(60)进行了飞行时间质谱分析,并讨论了质谱分析过程中实验条件对结果的影响.     

FORMATION OF A BURIED LAYER OF ALUMINIUM NITRIDE BY HIGH DOSE N2+ IMPLANTATION INTO ALUMINIUM

Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N₂⁺ ions with doses ranging from 4.3×10¹⁷ to 1.8×10¹⁸ N/cm² were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose N_c, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N₂⁺ is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.     

STUDY ON PREPARATION OF UV CROSS-LINKING FILMS OF POLYURETHANE-LiClO4 COMPLEXES AND THEIR IONIC CONDUCTIVITY

The complexes of polyurethane containing double bonds with LiClO₄ were formed, and cross-linked films were produced by UV radiation, All of the films were uniform, transparent, flexible and smooth-faced with a considerable mechanical strength. The ionic conductivities of the films of several series of polymers with different molecule weights of PEG segment were measured, of which the highest is 8.09×10^-5S·cm^-1 at 300K under anhydrous atmosphere. Also the conductivity is deeply influenced by the molecule weight of the soft segment PEG of the polyurethane and the content of LiClO₄. The transport number of Li⁺ is about 0.57. Structure characteristic measurement much as DSC, XRD, IR etc., have been done and the conductive mechanism is discussed.