Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

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在分析软硬阈值去噪特点的基础上,提出一种改进的小波阈值函数。根据Langmuir探针I-V特性曲线的特点,提出一种改进的标准差估算方法来计算小波阈值。采用基于改进标准差和改进阈值函数的小波对探针特性曲线进行去噪,仿真结果表明,改进的方法取得了良好的去噪效果,提高了信号的信噪比,降低了均方误差,去噪效果优于传统阈值去噪方法。     

激光光源粒子计数器响应曲线对粒子折射率敏感度及多值性的分析

采用激光作光源的光学粒子计数器(L_OPC)克服了白炽灯作光源时使用寿命短、发光强度不稳定、需要经常标定的缺点,但激光波长的单一也带来了一些问题,如响应曲线对折射率敏感度的变化和多值性等问题。利用Mie散射理论,通过数值模拟实验,对L_OPC的这些问题进行了分析,提出了L_OPC实验样机的设计参数。     

2-(4-氟代苯甲酰基)苯甲酸-铕配合物的合成、结构表征及荧光性能的研究

以硝酸铕、2-(4-氟代苯甲酰基)苯甲酸(HL)、1,10-菲咯啉(Phen)和三苯基氧膦(TPPO)合成了EuL₃(H₂O)₆,EuL₃Phen(H₂O)₄和EuL₃(TPPO)(H₂O)₅三种固态配合物。用元素分析、红外光谱、核磁共振氢谱对配合物进行了组分确定和结构表征。IR表明,2-(4-氟代苯甲酰基)苯甲酸与Eu3+形成配合物后,位于1 692 cm-1处羧基的ν_CO峰消失,2 500～3 200 cm-1处羧基的ν_O—H峰也消失,出现了羧酸盐特有的反对称伸缩振动吸收峰(ν_as(CO-₂))和对称伸缩振动吸收峰(ν_s(CO-₂)),且Δν(ν_as(CO-₂)-ν_s(CO-₂))与钠盐的Δν相近,说明羧酸根与Eu3+以对称双齿桥式配位。在1H NMR中,形成配合物后第一配体苯环上的质子峰变为宽峰且移向高场,Phen和TPPO中质子化学位移移向低场。室温下测定了配合物的荧光激发光谱和发射光谱,激发光谱表明配合物EuL₃(H₂O)₆,EuL₃Phen(H₂O)₄和EuL₃(TPPO)(H₂O)₅的最佳激发波长分别为353.0,355.0和357.0 nm;发射光谱均显示Eu3+离子的特征发射光谱,且表明Phen对Eu3+离子的荧光发射有明显增强作用。     

一种有场旋转和集中功能的新型多功能电磁器件的设计与研究

基于变换光学理论设计了一种新型的多功能电磁器件—旋转集中器.它以特殊的方式引导电磁波使其传播方向在器件核心区发生指定角度的旋转,并同时实现电磁场能量向该核心区的集中.针对提出的三种等效的旋转集中器结构,分别推导了相应的本构参数表达式,并利用有限元软件对三种结构分别进行了全波仿真.仿真结果验证了本构参数表达式的正确性.这三种不同的结构中,前两种结构由三层介质构成,后一种简化为两层介质.对于给定的任意旋转角度和能量集中率,三种结构可以使电磁场发生等效的传播方向旋转和能量集中两种效果.这些结果有助于对旋转器和集中器机理的进一步理解,并为复合功能器件的设计奠定了更充分的理论基础.本文提出的旋转集中器在设计高效率接收天线和特殊电路封装互联器件等方面都有潜在的应用前景.     

热解析富集-能量色散X射线荧光光谱法对溶液中汞的测定

搭建热解析富集装置对溶液中的汞富集后进行检测,可以提高X射线荧光测试的灵敏度.整个测试过程如下:样品中的汞在高温下发生热解析,经过滤膜时被选择性吸附,在使用光谱仪测试后,最终计算出样品中汞的含量.在热解析管路中加入白云石增加停留时间,可以降低汞的热解还原温度,在使用汞稳定化剂的条件下,只需加热到600℃就可以实现汞的解...     

Preparation and Humidity Sensing Properties of KCl/MCM-41 Composite

KCl/mobil composition of matter-41 （MCM-41） composite has been synthesized via a heat-treating process and characterized by x-ray diffraction, high resolution transmission electron microscopy, and nitrogen adsorption/desorption isotherms. In contrast with pure MCM-41, KCl/MCM-41 composite exhibits improved humidity sensing properties within the relative humidity range of 11-95%. The impedance of KCl/MCM-41 composite changes by about four orders of magnitude over the whole humidity range with the response time and the recovery times are about 30s and 35s, respectively. Small humidity hysteresis and good stability are also observed based on our product. These results make our product a good candidate in fabricating humidity sensors with high performances and low synthetic complexity.     

SiH3+O(3P)反应机理的理论研究

利用abinitio方法对SiH3+O(3P)反应进行了理论研究,在MP2/6-311+G(d,p)水平上优化得到了反应途径上的反应物、中间体、过渡态和产物的几何构型,并在QCISD(T)/6-311+G(d,p)水平上进行单点能计算.计算结果表明,SiH3+O(3P)→IM1→TS3→IM2→TS8→HOSi+H2为主反应通道,其他可能存在的次要产物有HSiOH+H、H2SiO+H和HSiO+H2.HOSi、HSiO和HSiOH(cis)还可能进一步解离生成SiO.另外,计算结果对SiH4+O(3P)反应机理中存在的争议给出了可能的解释,认为Withnall等人在实验中观察到的产物HSiOH、H2SiO和SiO并不是SiH4+O(3P)反应的直接产物,而是来自副反应SiH3+O(3P).     

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efflcient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 6Ohm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.