Tip-induced local anodic oxidation on p-GaAs surface with non-contact atomic force microscopy

Nano-sized oxide structures resulted from localized electrochemical oxidation induced by a negatively biased atomic force microscopy (AFM) tip operated with the non-contact mode were fabricated on p-GaAs(1 0 0) surface. The geometrical characteristics of the oxide patterns and their dependences on various fabrication parameters, e.g., the anodization time, the biased voltages, the tip scanning rates, as well as the formation mechanism and relevant growth kinetics are investigated. Results indicate that the height of the protruded oxide dots grow exponentially as a function of time in the initial stage of oxidation and soon reaches a maximum height depending linearly with the anodized voltages, in according with the behaviors predicted by space charge limited local oxidation mechanism. In addition, selective micro-Auger analysis of the anodized region reveals the formation of Ga(As)O_x, indicating the prominent role played by the field-induced nanometer-size water meniscus in producing the nanometer-scale oxide dots and bumps on p-GaAs(1 0 0) surface.     

Preparation,thermal properties,and flame retardance of epoxy–silica hybrid resins

A novel epoxy system was developed through the in situ curing of bisphenol A type epoxy and 4,4′‐diaminodiphenylmethane with the sol–gel reaction of a phosphorus‐containing trimethoxysilane (DOPO–GPTMS), which was prepared from the reaction of 9,10‐dihydro‐9‐oxa‐10‐phosphaphenanthrene‐10‐oxide (DOPO) with 3‐glycidoxypropyltrimethoxysilane (GPTMS). The preparation of DOPO–GPTMS was confirmed with Fourier transform infrared, ¹H and ³¹P NMR, and elemental analysis. The resulting organic–inorganic hybrid epoxy resins exhibited a high glass‐transition temperature (167 °C), good thermal stability over 320 °C, and a high limited oxygen index of 28.5. The synergism of phosphorus and silicon on flame retardance was observed. Moreover, the kinetics of the thermal oxidative degradation of the hybrid epoxy resins were studied. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 2354–2367, 2003     

60keV质子辐照对TiNi记忆合金薄膜马氏体相变的影响

 利用磁控溅射的方法在氧化后的单晶Si基片上制备了TiNi形状记忆合金薄膜，利用示差扫描量热法和原位X射线衍射研究了薄膜的马氏体相变特征。通过60keV质子注入（辐照）薄膜样品研究了H+离子对合金薄膜马氏体相变特征的影响，结果表明氢离子注入后引起了马氏体相变开始Ms和结束点Mf以及逆马氏体相变开始As和结束温度Af的下降，而对R相变开始Rs和结束温度Rf影响不大。掠入射X射线衍射表明H+离子注入后有氢化物形成。H⁺离子注入形成的氢化物是引起相变点的变化的主要因素。     

用不变速度推导卢瑟福散射公式

通过横向速度变换得到两种不变速度，由此推出卢瑟福散射公式。     

卟啉及其配合物在分析化学中应用进展

综述了卟啉及配合物在分析化学中的应用研究进展。重点介绍了其在光度分析、电化学、分子识别、探针等方面的应用。     

Synthesis and transition temperatures of liquid crystals incorporating a 1,4-tetrafluorophenylene unit

Two homologous series of mesogenic materials which incorporate a 1,4-tetrafluorophenylene moiety and a terminal cyano- or nitro-substituent have been synthesized by using palladiumcatalysed coupling procedures. The compounds exhibit nematic and/or smectic A phases.     

First observation of yrast band in odd-odd162Lu

High spin states of the odd-odd¹⁶²Lu nucleus have been studied via¹⁴⁷Sm(¹⁹F,4nγ)¹⁶²Lu reaction at 95 MeV beam energy. Level scheme for yrast band based onπ[h_11/2 v[i_13/2] quasiparticle configuration was established up to I ^π = (23^?) for the first time. This band shows the signature inversion in energy before backbending generally appeared in this mass region. It is stressed that the signature splitting in¹⁶²Lu is larger than that in the¹⁶⁰Tm nucleus.     

硫化锌掺钴对电子结构和光学性质的影响

根据密度泛函理论对钴掺硫化锌周围的品格进行了结构优化,计算得到了钴杂质周围的晶体结构、电子态密度分布和吸收光谱.计算结果表明,由于Co原子掺入ZnS晶格常数减小,导致晶格畸变;带隙变窄;吸收峰展宽至更长波长区域.