碳纳米管应变传感测量与偏振拉曼控制方法研究

面向微尺度平面变形的精细测量对碳纳米管应变传感测量方法进行了理论与实验研究。利用碳纳米管的拉曼应变敏感性及其偏振选择性,针对各种典型的拉曼光谱系统偏振构型,推导建立了适于各种偏振拉曼构型的碳纳米管平面应变传感解析关系式。从测量学角度出发,对不同偏振构型下的应变传感进行了对比分析,得出入射与散射光偏振方向皆能够连续控制且始终保持平行的双偏协同构型最适合于平面应变传感,并进一步提出易于实现的双偏协同构型光路配置方式与控制方法。通过实验应用证明,所提出的方法能够有效的实现基于偏振拉曼的碳纳米管平面应变传感测量。     

GaN基HEMT器件的缺陷研究综述

GaN基高电子迁移率晶体管(HEMT)因具有高输出功率密度、高工作频率、高工作温度等优良特性,在高频大功率等领域具有广泛应用前景。目前,HEMT器件在材料生长和工艺制备方面都取得了巨大的进步。但是,由缺陷产生的陷阱效应一直是限制其发展的重要原因。本文首先论述了HEMT器件中的表面态、界面缺陷和体缺陷所在位置及其产生的原因。然后,阐述了由陷阱效应引起的器件电流崩塌、栅延迟、漏延迟、Kink效应等现象,从器件结构设计和工艺设计角度,总结提出了改善缺陷相关问题的主要措施,其中着重总结了器件盖帽层、表面处理、钝化层和场板结构4个方面的最新研究进展。最后,探索了GaN基HEMT器件在缺陷相关问题上的未来优化方向。     

CaAlSiN_3∶Eu~(2+)荧光粉掺杂PC透光罩的制备及其在植物灯中的应用

为了实现传统白光LED光源与植物照明用光源之间的快速转换,采用高温熔融造粒的方式制备了不同质量分数CaAlSiN_3∶Eu~(2+)(CASN∶Eu~(2+))掺杂的荧光聚碳酸酯(PC)透光罩,并进行了结构和光学分析。制备了荧光PC透光罩配备的T8型LED灯管,测试了其EL光谱、相关光学性质以及对于生菜的种植效果。结果表明,CASN∶Eu~(2+)荧光粉在掺杂过程中性质稳定,该灯管随着配备的透光罩的荧光粉掺杂浓度的提高,相对应的WLED的色坐标从(0.3272,0.3467)变化到(0.3895,0.3824),色温从5757K下降到3807K,显色指数从70.3上升到77.6,但光效略有减弱。配备了荧光粉质量分数为4‰透光罩的T8型白光LED灯管的光质更适合生菜生长。     

Quantum Effects of a Dissipative Mesoscopic Circuit with Mutual Inductance

We study the quantum fluctuations of the charge and current of two L-C dissipative mesoscopic circuit with the mutual inductance in the vacuum state.Our results show that the system state will evolve to a squeezed coherent state under the effect of external source.We find that the squeezing amplitude parameter is relative to the parameters of circuit and the mutual-inductance coefficient in the existence of dissipation.When the circuit has no dissipation or there is complete coupling between two meshes,the squeezing amplitude parameter only depends on the capacitance‘s ratio.     

Weak Finite—Size Dependence of Velocity and Strong Phase Dependence of Central Charge

We study the finite-size scaling behavior of velocity and central charge for different coupling constants and different phases in (1 1)-dimensional lattice model in very short chains.Using XXZ spin 1/2 chains with 15 or fewer sites,we demonstrate the weak finite-size dependence of spinon velocity for any magnitude of coupling strength Jz and the strong phase dependence of central charge.This behavior of velocity and central charge in different coupling constants and different phases gives a method to determine phase transitions of (1 1)-dimensional models.This method is simple and efficient by utilizing only the ground state energy of very short finite-size chains.It is also general and powerfur for various one-dimensional lattice models and it uncovers eventhe weakest berezinski-Kosterlitz-Thouless phase transitions.     

Particle-number conserving analysis for the 2-quasiparticle and high-K multi-quasiparticle states in doubly-odd 174,176Lu

Two-quasiparticle bands and low-lying excited high-K four-, six-, and eight-quasiparticle bands in the doubly-odd ^{174, 176}Lu are analyzed by using the cranked shell model (CSM) with the pairing correlations treated by a particle-number conserving (PNC) method, in which the blocking effects are taken into account exactly. The proton and neutron Nilsson level schemes for ^{174, 176}Lu are taken from the adjacent odd-A Lu and Hf isotopes, which are adopted to reproduce the experimental bandhead energies of the one-quasiproton and one-quasineutron bands of these odd-A Lu and Hf nuclei, respectively. Once the quasiparticle configurations are determined, the experimental bandhead energies and the moments of inertia of these two- and multi-quasiparticle bands are well reproduced by PNC-CSM calculations. The Coriolis mixing of the low-K (K=|Ω₁-Ω₂|) two-quasiparticle band of the Gallagher-Moszkowski doublet with one nucleon in the Ω = 1/2 orbital is analyzed.     

光致变色材料多阶光存储模型与实验

光致变色材料具有光子型反应的特点,控制光致变色材料吸收的光子数就可以控制材料的反应程度,从而实现多阶存储。根据光化学反应的原理,分析了光致变色材料的写入过程,建立了光致变色多阶存储写入过程的反射率模型。根据该模型的仿真计算结果,设定了一组合适的曝光量,在1,2_双(2_甲基_5_(4_(1,3_二氧戊环基)苯基)噻吩_3_基)全氟环戊烯材料上实现了8阶存储。     

Curvelet结合图像方向离散度的DSPI无损检测缺陷边缘提取

边缘提取是DSPI无损检测缺陷自动识别的基础。根据人类视觉识别的特点,提出以Curvelet多尺度几何分析为基础进行缺陷图像的边缘提取,为了对DSPI检测过程中因光照不足等原因产生的伪缺陷进行分辨,基于矢量积定义了图像的方向离散度,并与Curvelet多尺度分析方法相结合,在橡胶复合材料DSPI无损检测中进行应用。     

Dy3+含量对Eu2+,Dy3+共掺高硅氧发光玻璃发光性能的影响

通过控制Dy3+的掺杂浓度,制备出了不同浓度的Eu2+,Dy3+单掺和共掺高硅氧发光玻璃,测试其激发和发射光谱,讨论了Dy3+浓度对Eu2+,Dy3+共掺样品发光性质的影响。结果表明,Eu2+,Dy3+共掺高硅氧发光玻璃中存在Dy3+向Eu2+的无辐射能量传递现象,且Dy3+的引入会使高硅氧发光玻璃中Eu—O的共价作用减弱,造成Eu2+发射峰蓝移;随着Dy3+浓度的增加,Dy3+→Eu2+能量传递增强,Eu2+发光增强;Dy3+含量继续增加,则Dy3+发光出现浓度猝灭,且Dy3+→Eu2+能量传递减弱。     

MRI、NMR低温超导磁体失超保护综述

用超导磁体制造NMR、MRI等核磁共振设备越来越普遍,超导磁体的失超保护在磁体设计中是一个很关键的问题.本文从失超保护方式,保护电路设计、加速失超方法等三个方面总结了如何为一个超导磁体尤其是核磁共振用超导磁体设计失超保护方案,指出了一些常见的问题的解决办法,最后还介绍并比较了一些常用失超模拟软件,以期为相关科研人员提供有价值的参考.