关于p-叶星形性和强星形性的充分条件 (英)

本文利用微分从属的方法得到了单位圆盘内p-叶星形函数和强星形函数的某些充分条件．     

An experimental study of dynamic tensile properties of glass fiber at low-temperatures

Tensile impact experiments of EC8.0−24×7 glass fiber bundles at different low temperaturesT(14°C, −40°C and −10°C) and strain rates ɛ were carried out, and complete stress-strain curves were obtained. Within the range of the experiment temperatures and strain rates, it is found that the initial modulusE, the ultimate strength σ_max and the unstable strain ɛ _b of the glass fiber bundles all increase with ɛ at an identicalT. At an identical ɛ, with the decrease ofT, E and σ_max increase; but ɛ _b increases when 10°C>T>−40°C and decreases when −40°C>T>−100°C. The strain-rate- and temperature-dependent bimodal Weibull statistical constitutive theory was adopted for the statistical analysis of the experimental results, and the Weibull parameters of single fiber were obtained. The results show that the bimodal Weibull distribution function is suitable to represent the strength distribution of the glass fiber at low temperature and different strain rates. The differences in the mechanical properties between EC8.0−24×7 and EC5.5−12 ×14 glass fiber bundles were also discussed. Project supported by the National Natural Science Foundation of China (No. 19772058).     

分叉问题的几何描述及其计算方法

本文通过一个构造的向量场,建立了非线性代数方程组的解流形与对应向量场的不变流形之间的等价关系,把解流形的分叉问题转化为对向量场奇点附近局部性态的研究。这种思路具有几何直观性,并为解流形的跟踪与分叉计算提供了一套新的数值方法。     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

一种基于能带工程设计的CaAsSb/InP异质结双极晶体三极管

异质结晶体三极管（HBT）的性能与其材料体系密不可分，利用能带工程可以大大优化器件的结构，提高器件性能，文章从分析HBT的能带结构及设计要求入手，介绍了一种利用能带工程设计的基于GaAsSb/InP材料体系的新型HBT器件的结构及其性能，分析了该器件与其它材料体系器件相比所具有的优异特性，说明了对HBT的各区材料，其带边的相对位置所起的重要作用，最后，文章还报道了近期的实验情况，说明了GaAsSb/InP体系HBT的实际性能与理论预言一致。     

航空兵塔台辅助指挥系统通信分系统技术设计方案

文章详细描述了航空兵机场塔台辅助指挥系统之通信分系统设计的特点与功能、硬件结构、软件设计原则以及接口通信协议等问题。该分系统设计已在航空兵塔台辅助指挥系统研究中得到应用 ,并达到了良好的控制效果。     

X分形晶格上Gauss模型的临界性质

采用实空间重整化群变换的方法,研究了2维和d(d>2)维X分形晶格上Gauss模型的临界性质.结果表明:这种晶格与其他分形晶格一样,在临界点处,其最近邻相互作用参量也可以表示为K=bqiqi(qi是格点i的配位数,bqi是格点i上自旋取值的Gauss分布常数)的形式;其关联长度临界指数v与空间维数d(或分形维数df)有关.这与Ising模型的结果存在很大的差异. 关键词： X分形晶格 重整化群 Gauss模型 临界性质