Voltage ‐ Current Study of an Atmospheric Dielectric Barrier Discharge

The discharge behaviour of an atmospheric dielectric barrier parallel plate discharge, used for surface treatment, is studied. Since an uniform plasma is preferable for surface treatment, filaments must be avoided in the discharge. The occurrence of filaments can be detected by measuring the current flowing through the discharge. Current and voltage measurements give an indication of the power consumption by the plasma. The power consumption of the plasma as function of the applied frequency is examined. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ion structure determinations and ion—molecule reactions by double quadrupole mass spectrometry

The QQ mass spectrometer is shown to be applicable to ion structure determination via collision-induced dissociations of mass-selected ions. The instrument can be scanned so as to record the products of dissociation as well as those of ion—molecule association reactions. The dissociations correspond to those observed at high kinetic energy in mass-analyzed ion kinetic energy spectrometers and the association reactions show parallels with reactions seen in ion cyclotron resonance spectroscopy and in high-pressure mass spectrometry     

Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen

     

Properties of reflected sunlight derived from a Green's function method

The inference of optical depth and particle size of clouds and aerosols using remotely sensed reflected radiance at solar wavelengths has received much attention recently. The information these measurements provide is path integrated. However, very little is known about the vertical distribution of this weighting. To characterize it, we first solve the radiative transfer equation (RTE) by a Green's function approach, and then investigate the sensitivity of the weighting to vertical inhomogeneities in the extinction by introducing a function that is closely related to the Green's function, herein called the contribution function. This function calculates the contributions to the radiance at the upper boundary of the medium by underlying layers. Three hypothetical clouds of identical optical depth but exhibiting different extinction profiles were used in this study. The contribution function was found very sensitive to the extinction profile. The global reflection and transmission matrices used to construct the Green's function, derived using an eigenmatrix method, resulted in an efficient, stable, and accurate method for calculating the emerging radiances that can be extended to multi-layered media.