Study of the Surface Processes in Vapor-Phase Epitaxial GaAs: Asymmetric Trapping of Atoms at the Step

Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl₃–H₂ system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the growth of epitaxial GaAs layers on vicinals in the neighborhood of (111)A. The effective diffusion length is estimated.     

Development of high-speed video cameras for Dynamic PIV

The most promising next generation Image Velocimtry (IV) is the high-speed Dynamic PIV. It requires the development of innovative high-speed video camera sensors. We started by specifying the required performance of these new sensors, for measurements in air and water flows. These criteria founded on the most recent developments in PIV algorithms and incorporate results from a large questionnaire survey of users of high-speed video cameras in Japan. The results suggest that the followings are required: (1) frame rate of 1,000,000 fps, (2) pixel count of 1,000,000 pixels, (3) frame storage capacity of 100–200 frames for tracing a single event and 10,000 frames for turbulent measurements, (4) gray levels of 4–8 bits for PTV; 12 bits for observation. Finally, we reviewed the state of the art of high-speed video-image sensors. Currently the standard parallel-readout sensors can operate at 1 Kfps with a pixel count of approximately 1 Kpixels. The In-situ Storage Image Sensor (ISIS) developed by the authors has recently achieved frame rates of 1 Mfps.     

Switching kinetics of ferroelastic ferroelectrics

Switching kinetics of uniaxial ferroelastic ferroelectrics (FFs) in external electric and stress fields is studied using classical theory of nucleation and growth. The stage in which the polarization and deformation reversal involves the main body of the FF and the final stage (Ostwald ripening) of the FF switching are studied with allowance for the change in the repolarization and redeformation during the phase transition. The time dependences of the repolarization and redeformation are found, and equations are derived from which the polarization current and the deformation flux, as well as their time dependence, can be calculated. The calculated main characteristics of the FF switching are compared with the experimental data for switching of Rochelle salt single crystals.     

Thermal conductivity of GaS and GaSe layered semiconductors

This paper reports on the results of experimental investigations into the thermal conductivity of GaS and GaSe layered semiconductor crystals in directions parallel and perpendicular to the crystal layers in the temperature range 5–300 K. Specific features of the thermal conductivity of these crystals are analyzed.     

Estimation of the parameters of a bivariate distribution of Gaussian random variables that cannot be observed simultaneously

A point estimator is proposed for certain numerical characteristics of a bivariate normal distribution with parameters that cannot be observed simultaneously. Translated fromStatisticheskie Metody Otsenivaniya i Proverki Gipotez, pp. 21–28, Perm, 1990.     

Fractional programming and characterization of some vertices of the feasible region

This paper considers a problem of nonlinear programming in which the objective function is the ratio of two linear functions and the constraints define a bounded and connected feasible region. Using a coordinate transformation, this problem is transformed into a simpler one, whose geometric interpretation is of particular significance. The transformation leads to a characterization of some special vertices of the feasible region from both the theoretical and operational points of view.     

The Efficiency Distribution Approach in Data Envelopment Analysis: An Application

A method is developed here for characterizing the empirical distribution of the efficient units in data envelopment analysis. Two empirical applications illustrate the various uses of the distribution approach. One involves the cost frontier which exhibits increasing returns to scale and the other involves a dynamic production frontier, where technological change causes a shift of the production frontier over time.     

Dirac-Hestenes spinor fields on Riemann-Cartan manifolds

In this paper we study Dirac-Hestenes spinor fields (DHSF) on a four-dimensional Riemann-Cartan spacetime (RCST). We prove that these fields must be defined as certain equivalence classes of even sections of the Clifford bundle (over the RCST), thereby being certain particular sections of a new bundle named the spin-Clifford bundle (SCB). The conditions for the existence of the SCB are studied and are shown to be equivalent to Geroch's theorem concerning the existence of spinor structures in a Lorentzian spacetime. We introduce also the covariant and algebraic Dirac spinor fields and compare these with DHSF, showing that all three kinds of spinor fields contain the same mathematical and physical information. We clarify also the notion of (Crumeyrolle's) amorphous spinors (Dirac-Kähler spinor fields are of this type), showing that they cannot be used to describe fermionic fields. We develop a rigorous theory for the covariant derivatives of Clifford fields (sections of the Clifford bundle, CB) and of Dirac-Hestenes spinor fields. We show how to generalize the original Dirac-Hestenes equation in Minkowski spacetime for the case of RCST. Our results are obtained from a variational principle formulated through the multiform derivative approach to Lagrangian field theory in the Clifford bundle.     

A method of computing the gradient and the Hessian of the quality criterion in parametric optimization of continuous-discrete stochastic systems

We propose an effective method of numerical determination of the gradient vector and the Hessian matrix of a quadratic quality criterion in parametric optimization of continuous-discrete stochastic dynamic control systems based on the application of adjoint equations. Translated fromDinamicheskie Sistemy, No. 13, 1994, pp. 20–25.     

Temperature Dependence of InSb Reflectivity in the Far Infrared: Determination of the Electron Effective Mass

We measured the dependence of the reflectivity of InSb crystals upon temperature in the submillimeter region using monochromatic radiation from an optically pumped far infrared (FIR) laser. The measures allowed us to determine the value of the electron effective mass at low temperatures with radiations of different frequencies. Our measurements extend the results obtained recently on pure crystals with magneto-optical methods to the low temperatures region where only old measures were available.