Spin tunneling properties in mesoscopic magnets: effects of a magnetic field

The tunneling of a giant spin at excited levels is studied theoretically in mesoscopic magnets with a magnetic field at an arbitrary angle in the easy plane. Different structures of the tunneling barriers can be generated by the magnetocrystalline anisotropy, the magnitude and the orientation of the field. By calculating the nonvacuum instanton solution explicitly, we obtain the tunnel splittings and the tunneling rates for different angle ranges of the external magnetic field ( θ _H = π/2 and π/2 < θ _H < π). The temperature dependences of the decay rates are clearly shown for each case. It is found that the tunneling rate and the crossover temperature depend on the orientation of the external magnetic field. This feature can be tested with the use of existing experimental techniques. Received 12 March 2001 and Received in final form 18 October 2001     

Ion structure determinations and ion—molecule reactions by double quadrupole mass spectrometry

The QQ mass spectrometer is shown to be applicable to ion structure determination via collision-induced dissociations of mass-selected ions. The instrument can be scanned so as to record the products of dissociation as well as those of ion—molecule association reactions. The dissociations correspond to those observed at high kinetic energy in mass-analyzed ion kinetic energy spectrometers and the association reactions show parallels with reactions seen in ion cyclotron resonance spectroscopy and in high-pressure mass spectrometry     

Phase modulation of the signal beam in three-wave forward mixing in photorefractive bismuth silicon oxide

The interaction of three forward beams in a BSO crystal is investigated under conditions when the two pump beams are anti-symmetrically detuned and the signal beam is phase modulated. For sinusoidal phase modulation the signal gain is shown to be dependent on the instantaneous frequency detuning. Single and double maxima in gain are obtained depending on the voltage amplitude applied to the piezoelectric mirror. For triangular phase modulation a slight asymmetry is found in the gain versus detuning curve.     

A model for a uniform steady-state vacuum arc with a hot anode

A model is formulated and evaluated for a Uniform electrical discharge sustained in vapor evaporated from an arc-heated anode. The plasma potential is positive with respect to both the cathode and anode. For a Cu anode, the anodic vapor dominates the plasma for current densities exceeding 8 kA/m². The anode heating potential is approximately 6.5 V, and the dominant cooling mechanism is evaporation for current densities exceeding 20 kA/m². Over the range 10 to 10000 kA/m², the electron density increases from 8×10¹⁷ to 5×10²³ m^-3, while the ionization fraction rises from 0.3% to 4%. At the lower end of this current range the electrical resistivity of 4 mΩ-m is determined primarily by electron-neutral collisions, while with increasing current the resistivity decreases to 0.7 mΩ-m, with electron-ion collisions contributing an equal share. This hot-anode vacuum arc may have potential for industrial application as a macroparticle-free high-deposition-rate coating source     

Sequential nonlinear estimation with nonaugmented priors

How can the basic compatibility of theory and observations be investigated for nonlinear processes without requiring stochastic characterizations for residual error terms? The present paper proposes a flexible least-cost approach. For each possible estimatex for the sequence of process states, letc _D (x) andx _M(x) denote the costs incurred for deviations away from the prior dynamic specifications and prior measurement specifications, respectively. Define the cost-efficiency frontier to be the greatest lower bound for the set of all possible cost pairs [c _D (x),c _M(x)], conditional on the given observations. State sequence estimatesx that attain the cost-efficiency frontier indicate the possible ways that the actual process could have developed over time in a manner minimally incompatible with the prior dynamic and measurement specifications. An algorithm is developed for the exact sequential updating of the cost-efficient state sequence estimates as the duration of the process increases and additional observations are obtained.     

有关力学谱和内耗工作的综合与回顾

本文广泛地收集了有关内耗，力学谱，超声衰减方面的专著及会议文集。反映了20世纪在此领域的英文，俄文出版的书籍。也列出了历次国际会议及前苏联，乌克兰，中国的国内会议。文中包括了点缺陷，电，声子，位错，晶界，电畴等诸方面在内的内耗与力学谱工作。     

String structures and the path fibration of a group

We use the realisation of the universal bundle for the loop group as the path fibration of the group to investigate the string class, that is the obstruction to a loop group bundle lifting to a Kac-Moody group bundle. In the case that the loop group bundle is constructed by taking loops into a principal bundle we show that the classifying map is the holonomy around loops and give an explicit formula for the string class relating it to the Pontrjangin class of the principal bunble.     

Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen