Enhancement of photosensitivity in bismuth doped Cu2ZnSnS4 thin films

In this paper, the effect of bismuth doping on the structural, morphological, optical and electrical properties of Cu₂ZnSnS₄ (CZTS) films has been investigated. The undoped and bismuth doped CZTS films (0, 0.5, 1, 1.5 and 2 mol%) were deposited on glass substrates by solution based method. The XRD result shows a significant improvement in the crystallinity of the films with increase in bismuth concentration. The Raman spectra of the films show the dominant peak at 334 cm^–1 corresponding to A₁ vibrational mode of CZTS kesterite phase. The FESEM micrographs of the films show an enhancement in the grain size and densification with the addition of bismuth ion concentration. The optical bandgap of the films was found to vary (1.59–1.40 eV) with the doping of bismuth ions. The I –V characteristics indicate twofold increment in the photoconductivity for the bismuth doped CZTS films under 100 mW/cm² illumination suggesting their potential application in photovoltaic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Electric field and temperature dependence of hole mobility in electroluminescent PDY 132 polymer thin films

The current density–voltage ($J\text{–}V$) behavior of polymer PDY 132 thin films has been investigated in hole-only device configuration, viz., ITO/poly(ethylene-dioxthiophene):polystyrenesulphonate (PEDOT:PSS)/PDY 132/Au, as a function of polymer (PDY) film thickness (150 nm and 200 nm) and temperature (290–90 K). Hole current density was found to follow two distinct modes of conduction, (i) low electric field region I: ohmic conduction where slope $～1$, and (ii) intermediate and high electric field region II: non ohmic conduction where slope $～2$. Region I has been attributed to the transport of intrinsic background charge carriers while region II has been found to be governed by space charge limited currents (SCLC) with hole mobility strongly dependent on electric field and temperature. The respective hole transport parameters determined from the SCLC regime, ${\mu }_{p0}$ is $3.7\times 10^{?3}{m}^2/Vs$, ${\mu }_p(0,T)$ is $3.7\times 10^{?8}{m}^2/Vs$, and zero field activation energy (${\Delta }_0$) of 0.48 eV is obtained.     

Magnetic and magneto-transport properties of double perovskite Ba2−xSrxFeMoO6 system

The structural magnetic and magneto-transport properties of double perovskite system Ba_2−xSr_xFeMoO₆ (0?x?1.0) prepared in bulk polycrystalline form are reported in this paper. X-ray diffraction analysis showed that samples are single phase and the lattice constants decreases with increase in the Sr content. The degree of Fe-Mo ordering has been found decreasing in the series with an increase in the Sr content. Parent compound Ba₂FeMoO₆ exhibits saturation magnetic moment value of 3.54 μ_B/f.u. at 85 K in a magnetic field of 6000 Oe. Temperature dependence of resistivity shows metallic behavior for all the samples. The magneto-resistance (MR) of the compound with x=0.4 is higher than that of the other samples. At room temperature this system shows a saturation magnetization value of 1.73 μ_B/f.u. and MR value of 7.08% (1 T). The observed variations in the structural and magnetic properties are attributed to the change of chemical pressure due to the substitution of Sr in place of Ba. The effect of antisite disorder (ASD) defects on magneto-transport properties is studied in more detail.     

Seedlayer interface enhanced magnetic anisotropy in CoPt (0 0 0 2)-textured films

The effects of interface roughness of Ta seedlayer on the structural and magnetic properties of Co₇₂Pt₂₈(20 nm)/Ru(30 nm)/Pt(2 nm)/Ta(5 nm)/glass were investigated. Uniaxial perpendicular magnetic anisotropy (8.6×10⁶ ergs/cc), coercivity (5.5 kOe) and nucleation field (−2.8 kOe) in the Co₇₂Pt₂₈ thin film sputter-deposited on relatively smooth surface of Ta seedlayer were achieved. The results showed that relatively smoother interface roughness of Ta seedlayer improved the CoPt/Ru (0 0 0 2) texture and magnetic properties.     

Temperature dependent ultrasonic properties of aluminium nitride

Hexagonal wurtzite structured aluminium nitride has been characterized by the theoretical calculation of ultrasonic attenuation, ultrasonic velocity, higher order elastic constants, thermal relaxation time, acoustic coupling constants and other related parameters in temperature range 200-800 K for wave propagation along the unique axis of the crystal. Higher order elastic constants of AlN at different temperatures are calculated using Lennard-Jones potential for the determination of ultrasonic attenuation. A decrease in ultrasonic velocity with temperature has been predicted, which is caused by reduction in higher order elastic constants with temperature. The temperature dependent ultrasonic properties have been discussed in correlation with higher order elastic constants, thermal relaxation time, thermal conductivity, acoustic coupling constants and thermal energy density. Anomalous behaviour of the attenuation is found at 400 K. On the basis of attenuation, the ductility and performance of AlN have been studied.     

Impulse coupling in laser-driven microtargets

We have studied about the thrust imparted to targets of different materials by pulsed TEA CO₂ laser and chopped CW CO₂ laser in air and its dependence on different parameters such as laser intensity and pulse duration. We estimated the impulse-coupling coefficient and compared it with the published results. The mechanism of generation of thrust by laser incident on targets in air is, in effect, combination of those involved in laser ablation in vacuum and laser-induced air detonation.     

Computer simulation of a cellular automata model for the immune response in a retrovirus system

Immune response in a retrovirus system is modeled by a network of three binary cell elements to take into account some of the main functional features of T4 cells, T8 cells, and viruses. Two different intercell interactions are introduced, one of which leads to three fixed points while the other yields bistable fixed points oscillating between a healthy state and a sick state in a mean field treatment. Evolution of these cells is studied for quenched and annealed random interactions on a simple cubic lattice with a nearest neighbor interaction using inhomogenous cellular automata. Populations of T4 cells and viral cells oscillate together with damping (with constant amplitude) for annealed (quenched) interaction on increasing the value of mixing probabilityB from zero to a characteristic valueB _ca (B _cq). For higherB, the average number of T4 cells increases while that of the viral infected cells decreases monotonically on increasingB, suggesting a phase transition atB _ca (B _cq).     

Energetic and structural characterization of 2‐R‐3‐methylquinoxaline‐1,4‐dioxides (R = benzoyl or tert‐butoxycarbonyl): experimental and computational studies

The gaseous standard molar enthalpies of formation of two 2‐R‐3‐methylquinoxaline‐1,4‐dioxides (R = benzoyl or tert‐butoxycarbonyl), at T = 298.15 K, were derived using the values for the enthalpies of formation of the compounds in the condensed phase, measured by static bomb combustion calorimetry, and for the enthalpies of sublimation, measured by Knudsen effusion, using a quartz crystal oscillator. The three dimensional structure of 2‐tert‐butoxycarbonyl‐3‐methylquinoxaline‐1,4‐dioxide has been obtained by X‐ray crystallography showing that the two N? O bond lengths in this compound are identical. The experimentally determined geometry in the crystal is similar to that obtained in the gas‐phase after computations performed at the B3LYP/6‐311 + G(2d,2p) level of theory. The experimental and computational results reported allow to extend the discussion about the influence of the molecular structure on the dissociation enthalpy of the N? O bonds for quinoxaline 1,4‐dioxide derivatives. As found previously, similar N? O bond lengths in quinoxaline‐1,4‐dioxide compounds are not linked with N? O bonds having the same strength. Copyright © 2007 John Wiley & Sons, Ltd.     

Trap elimination and reduction of size dispersion due to aging in CdS<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> quantum dots

Quantum Dots of CdS _x Se_1−x embedded in borosilicate glass matrix have been grown using Double-Step annealing method. Optical characterization of the quantum dots has been done through the combinative analysis of optical absorption and photoluminescence spectroscopy at room temperature. Decreasing trend of photoluminescence intensity with aging has been observed and is attributed to trap elimination. The changes in particle size, size distribution, number of quantum dots, volume fraction, trap related phenomenon and Gibbs free energy of quantum dots, has been explained on the basis of the diffusion-controlled growth process, which continues with passage of time. For a typical case, it was found that after 24 months of aging, the average radii increased from 3.05 to 3.12 nm with the increase in number of quantum dots by 190% and the size-dispersion decreased from 10.8% to 9.9%. For this sample, the initial size range of the quantum dots was 2.85 to 3.18 nm. After that no significant change was found in these parameters for the next 12 months. This shows that the system attains almost a stable nature after 24 months of aging. It was also observed that the size-dispersion in quantum dots reduces with the increase in annealing duration, but at the cost of quantum confinement effect. Therefore, a trade off optimization has to be done between the size-dispersion and the quantum confinement.