Electronic spectrum and ballistic transport in a helical nanotube

A model of a helical nanotube permitting analytical calculation of the spectrum and wave functions is proposed and studied. It is shown that the specific character of the symmetry of the Hamiltonian results in an electronic spectrum having no band structure despite the periodicity of the potential along the system axis. A two-dimensional ribbon rolled into a helix and a quasi-one-dimensional helix in a magnetic field are considered as limiting cases of the model. It is shown that the presence of additional local minima in the subbands of the electronic spectrum leads to a nonmonotonic dependence of the ballistic conductance of the system on the chemical potential.     

First synthesis of magnesacyclopentadienes from acetylenes by treatment with BuMgHlg in the presence of Zr complexes

Treatment of internal acetylenes and allenes with BuMgHlg (Hlg = Cl, Br) in the presence of Cp₂ZrCl₂ selectively leads to the formation of substituted magnesacyclopenta-2,4-dienes and alkylidenemagnesacyclopentenes.     

Diffuse x-ray scattering study of the formation of microdefects in heat-treated dislocation-free large-diameter silicon wafers

Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450°C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined.     

Spatial amplification of a laser wave and the transverse spread of electrons in an undulator with a noncollinear configuration

The spatial amplification of a wave in a magnetostatic undulator with noncollinear electron and laser beams is studied in the framework of the dispersion relation for single-frequency and collective regimes. The dependence of the gain on the electron beam width is estimated with regard to the spatial boundedness of the beams. The laser power threshold at which the selection with respect to the transverse velocity is possible is obtained for a free-electron laser without inversion.     

A manifestation of magnetism of bismuth in iron garnet films

Bismuth iron garnet films prepared through electron-beam and laser-induced evaporation on (001)-oriented substrates of scandium gallium gadolinium garnet are investigated using ferromagnetic resonance. It is assumed that the additional minima observed in the angular dependence of the resonance field can be associated with the magnetic moment of bismuth ions.     

Organylthiochloroacetylenes: IX. Reactions with geminal and vicinal dithiols

Alkylthiochloroacetylenes react with geminal (in ether) and vicinal (in THF) dithiols to form, respectively, functional 1,3-dithiolenes (yield 43%) or 1,3-dithiolanes (yield 34%).     

Convergence of optimal controls in some optimization problems

We consider the behavior of bundles of optimal controls when the initial state of the system goes to some given vector. We investigate three types of optimization problems: problems with fixed process length and a free right endpoint; problems with fixed process length and a fixed right endpoint; time-optimal problems. The article is a review of recent results obtained by the author. __________ Translated from Nelineinaya Dinamika i Upravlenie, No. 4, pp. 301–314, 2004.     

Structure and properties of the Ti-Si-N nanocrystalline coatings synthesized in vacuum by the electroarc method

Phase composition, defect substructure, and mechanical properties of the Ti-Si-N coating deposited on metal and ceramic-metal substrates by electroarc sputtering of the Ti-Si composite cathode in an ionized nitrogen atmosphere are investigated by the methods of modern materials science. It is established that coatings so formed with a thickness of ∼1–3 μm are superhard (H_v ∼ 50 GPa), and have the nanocrystalline structure (with crystalline sizes D = 7 nm) based on titanium nitride δ-TiN. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 46–51, February, 2007.