Direct measurement of the out-of-plane spin texture in the Dirac-cone surface state of a topological insulator

We have performed spin- and angle-resolved photoemission spectroscopy of Bi(2)Te(3) and present the first direct evidence for the existence of the out-of-plane spin component on the surface state of a topological insulator. We found that the magnitude of the out-of-plane spin polarization on a hexagonally deformed Fermi surface of Bi(2)Te(3) reaches maximally 25% of the in-plane counterpart, while such a sizable out-of-plane spin component does not exist in the more circular Fermi surface of TlBiSe(2), indicating that the hexagonal deformation of the Fermi surface is responsible for the deviation from the ideal helical spin texture. The observed out-of-plane polarization is much smaller than that expected from the existing theory, suggesting that an additional ingredient is necessary for correctly understanding the surface spin polarization in Bi(2)Te(3).     

In situ atomic force microscopy observation of hydrogen absorption/desorption by Palladium thin film

Grain structure changes in Pd thin film during hydrogen absorption and desorption were observed by in situ atomic force microscopy. The as-sputtered film had a smooth flat surface with 20-30 nm grains. Film that absorbed hydrogen showed buckling, caused by the compressive stress due to lattice expansion as Pd metal reacted with hydrogen to form the hydride. Grains on the buckles were agglomerated and deformed unlike those on flat areas beside the buckles. Film that absorbed and then desorbed hydrogen still showed some buckling; however, many buckles shrank and flattened when the compressive stress of lattice expansion was released during desorption. On both the remaining and the shrunken buckles, grain agglomeration was retained; whereas, the deformed grains reverted back to their original form. X-ray diffraction indicated compressive residual stress in the as-sputtered film and tensile residual stress in the film after hydrogen absorption/desorption. These results indicate that irreversible grain agglomeration is related to residual tensile stress in the film although agglomeration occurs only on the buckled areas.     

Conversion ratio to F-H center pairs from self-trapped excitons in alkali chloride crystals

Abstract

The time delayed double excitation spectroscopy has been utilized to determine the conversion ratio to F-H center pairs from self-trapped excitons(STE_L) at the lowest state (1s[sgrave]_g;a_1g). The final conversion ratios, η_F/(η_F+η_X), were 0.86, 0.49 and 0.20 for NaCl, KCl and RbCl at 14K, respectively. The conversion efficiency (η =η_F+η_X) from STE_L to F-H center pairs(η_F) and to unknown states(η_X) were 0.25, 0.90 and 0.76 for the hole excitation to π_g, while 0.03, 0.01 and 0.01 for the electron excitation to b_1u, b_2u or b_3u, in NaCl, KCl and RbCl, respectively.     

Alternative simple and effective synthesis of (di)benzoxanthones and their functions toward fluorescent dyes

(Di)benzoxanthones possessing additional benzene units on one or both sides of xanthone were prepared via dehydration of the corresponding dihydroxybenzophenone, where a catalytic amount of K₂CO₃ dramatically increased the yields. Chemical transformations of the versatile carbonyl groups of (di)benzoxanthones could derive fluorescent materials.     

Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO2/Pt/Si structure

Metal-insulator-metal (MIM) capacitors were fabricated using ZrO₂ films and the effects of structural and native defects of the ZrO₂ films on the electrical and dielectric properties were investigated. For preparing ZrO₂ films, Zr films were deposited on Pt/Si substrates by ion beam deposition (IBD) system with/without substrate bias voltages and oxidized at 200 °C for 60 min under 0.1 MPa O₂ atmosphere with/without UV light irradiation (λ = 193 nm, Deep UV lamp). The ZrO₂(∼12 nm) films on Pt(∼100 nm)/Si were characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V) and current-voltage (I-V) measurements were carried out on MIM structures. ZrO₂ films, fabricated by oxidizing the Zr film deposited with substrate bias voltage under UV light irradiation, show the highest capacitance (784 pF) and the lowest leakage current density. The active oxygen species formed by UV irradiation are considered to play an important role in the reduction of the leakage current density, because they can reduce the density of oxygen vacancies.     

Optical array logic network computing: Design of a prototype system

We present the architecture of novel optoelectronic parallel computing called optical array logic network computing (OAL-NC). In the OAL-NC, electronic processing elements execute local operations, whereas an optical network processor is dedicated to global operations as well as data transfer. As a prototype of the OAL-NC, a 16x16 pixel system is designed at a logical level. Issues associated with the design task are discussed.     

Optical Learning Neural Network Using Photorefractive Waveguides

A model of an optical neural network with learning ability is proposed. We numerically evaluate the learning ability of the proposed network by using parameters determined by experiments. Adaptive connections between artificial neurons are implemented using photorefractive (PR) waveguides that can be optically modified by guided beams. The network consists of three layers and has bipolar weights within the limited range. The bipolar weight is encoded as the difference between optical power transmittances of signal beams in two channels of the PR waveguides. The adaptivity of the transmittance of PR waveguide is experimentally evaluated and is incorporated into the proposed network simulated in a computer. The proposed network is trained by a simplified local learning algorithm. Numerical results showed that the proposed three-layered network with six hidden neurons can solve the exclusive-or problem.     

Epitactic growth of a decagonal phase in an Al–Ni–Co alloy film deposited on a (0001) sapphire substrate

Thin films of Al–Ni–Co alloy with an average thickness of 15?nm were produced by means of conventional vacuum deposition technique on (0001) sapphire substrates heated at various test temperatures. The microstructures and textures of the films obtained were thoroughly investigated by atomic force microscopy, X-ray diffraction and transmission electron diffraction and imaging techniques. The diffraction measurements have evidenced that the vacuum deposition of Al₇₂Ni₁₅Co₁₃ alloy on the substrates heated above 400°C allows a homogeneous poly-quasicrystalline film, consisting of the Ni-rich basic decagonal phase to grow. It has been further indicated by in-plane XRD analysis that the film deposited at 550°C contains a considerable amount of the decagonal grains epitaxially grown on the sapphire substrate. Possible epitaxial relations occurring between the deposit and the substrate will be detailed on the basis of results obtained from electron diffraction measurements.     

Charge ordering in Eu3S4 determined by the valence-difference contrast of synchrotron X-ray diffraction

Synchrotron X-ray diffraction study for single crystals of Eu₃S₄ has revealed that a Th₃P₄-type structure transforms to a charge-ordered one at T_c=188.5 K. The crystal structures of Eu₃S₄ at T=300, 180 and 160 K were determined in the least-squares refinements with the Mo K intensity data. The valence-difference contrast method was applied at the L_II absorption edge of Eu, utilizing a large difference in anomalous scattering factors between Eu²⁺ and Eu³⁺. The cation distribution of Eu²⁺ and Eu³⁺ was determined by crystal-structure analyses based on the intensity data collected at two wavelengths of λ=1.6312 and 1.6298 Å.The least-squares structural refinements suggest that the most plausible atomic arrangement is [Eu³⁺]^4a[Eu²⁺Eu³⁺]^8dS₄. The charge-ordering scheme is that a half of Eu³⁺ ions occupy the whole 4a sites in the crystal structure, while the remaining half of Eu³⁺ ions mix with Eu²⁺ in the 8d sites. The scheme is also supported by the energy dependence of Bragg intensities for 400 and 004 reflections.     

A Novel Spread Function for Observation of Random Surface

When a random rough surface is viewed obliquely by an imaging system, the position of a viewed point fluctuates with surface displacements. This fluctuation introduces an additional blur to the images that are mapped on the average surface. A new class of spread function, which represents the resolution associated with the randomness of an imaging object, is introduced to treat this problem and an analytical expression of the function is obtained for a Gaussian random surface under the presence of shadowing effects. This spread function is useful in understanding the loss in resolution of images of a random surface such as the thermal imagery of an ocean surface in the near horizon.