Studies of divacancy in Si using positron lifetime measurement

The charge state dependence of positron lifetime and trapping at divacancy (V₂) in Si doped with phosphorus or boron has been studied after 15 McV electron irradiation up to a fluence of 8.0×10¹⁷ e/cm². The positron trapping cross sections for V ₂ ^2– , V ₂ ^– and V ₂ ⁰ at 300 K were about 6×10^–14, 3×10^–14 and 0.1–3×10^–14 cm², respectively. For V ₂ ⁺ , however, no positron trapping was observed. The marked difference in the cross sections comes from Coulomb interaction between the positron and the charged divacancy. The trapping rates for V ₂ ⁰ and V ₂ ^2– have been found to increase with decreasing temperature in the temperature range of 10–300 K. These results are well interpreted by a two-stage trapping model having shallow levels with energy of 9 meV (V ₂ ⁰ ) and 21 meV (V ₂ ^2– ). The appearance of a shallow level for V ₂ ⁰ can not be explained by a conventional Rydberg state model. The lifetime (290–300 ps) in V ₂ ⁰ is nearly constant in the temperature range from 10 to 300 K, while that in V ₂ ^2– increases from 260 ps at 10 K to 320 ps at 300 K. The lifetime (260 ps) in V ₂ ^2– is shorter than that in V ₂ ⁰ at low temperature, which is due to the excess electron density in V ₂ ^2– . At high temperature, however, the longer lifetime of V ₂ ^2– than that of V ₂ ⁰ is attributed to lattice relaxation around V ₂ ^2– .     

Effect of interstitial impurities on positronium formed in voids of vanadium

Angular correlation of two-photon annihilation radiation (ACAR) measurements have been performed to study the effect of interstitial impurities (O, C and D) on positronium (Ps) formation in irradiation-induced voids of vanadium. It has been observed that Ps formation is sensitively affected by doping with the interstitial impurities, irradiation dose, irradiation temperature, and also by post-irradiation annealing. The Ps component intensity is found to be related to segregation of the interstitial impurities and provides a new experimental method to study void surfaces.     

Iron-metal multilayers studied by Mössbauer spectroscopy,RBS and X-ray diffraction

Fe/M (M = Ag, Zn and Sn) multilayers prepared by a vacuum evaporation method are studied by Mössbauer spectroscopy (MS), Rutherford backscattering spectroscopy (RBS) and X-ray diffraction (XRD). For the case of an M = Ag multilayer, MS reveals that Fe in the multilayer remains as an-phase down to the layer thickness of 10 nm. This result is in agreement with the RBS result that Fe and Ag form a completely discrete layer structure without any mutual mixing. For the case of M = Zn and Sn, RBS reveals that a considerable mixing has taken place between Fe and Sn during the specimen preparation. MS on Fe/Sn specimens with different layer thickness shows that an alloy phase of about 5 nm thickness is formed at the interface. Structural as well as magnetic properties of the alloy phase are discussed based on MS at different temperatures and on reported results of the intermetallic compound FeSn.     

Magnetic phase diagram of anisotropic layered superconductors via magnetization measurements forH‖c in Bi2212

The Bi₂Sr₂CaCu₂O₈ system is viewed as an archetypal of superconductors modelled as Josephson coupled CuO₂ bilayers. The isothermal and temperature dependent DC and AC magnetization measurements forH‖c in a single crystal of Bi2212 have been performed. Qualitative changes are observed to occur over a narrow range of temperature values before reaching the superconducting-normal transition. The observed behaviour can be ascribed to the rapid variation in the strength of the coupling between the superconducting CuO₂ planes (i.e., bilayers in the case of Bi2212). Strongly coupled planes behave like a 3D superconductor, whereas weakly coupled planes have a two component response attributable to 2D planes and interplanar couplings. We believe that this paper is a plethora of new findings. Our observations imply that resistivity across the planes becomes zero earlier than that within the planes. A new line (designated asH _2D(T)) above which the change in the electromagnetic response is dominated by quasi 2D-planes has been determined for the first time. This paper also contains the first observation of Differential Diamagnetic Effect (DDE) in the In-phase AC susceptibility data which signals the onset (atT _2D(H)) of dominance of response from 2D-planes. In addition to a host of interesting thermomagnetic history effects which are a consequence of interplay between the diamagnetic responses from the two components, a comparison of irreversibility lines (of the 3D state) determined by different methods on the same specimen of a HTSC is also being presented for the first time. We have come across Paramagnetic Meissner Effect (PME), first recognized in ceramic samples of Bi2212, in the temperature region of dimensional crossover in our single crystal sample, whichinter-alia confirms our labelling of the two component behaviour. A schematic phase diagram summarizing the various transformations that can occur nearT _c in the electromagnetic response of an anisotropic layered system has been drawn.     

Dynamic photoelastic analysis by optical heterodyne polarimetry

This paper describes the mapping of the spatiotemporal principal stress distribution evolved with time in an epoxy photoelastic sample. In the optical heterodyne polarimeter exploited, the signal beam of light transmitted by the sample under continuously loaded condition is photomixed with the local oscillator beam of light made up of orthogonal linearly polarized two-frequency components. Every pixel of a MOS video camera used generates a beat photocurrent that possesses the two orthogonal field components of the elliptically polarized signal beam. The spatiotemporal principal stress distributions can be uniquely determined simultaneously and independently from these two orthogonal field components, and are successfully mapped in a time-sequential form. The spatial and temporal resolutions in the maps are 0.18 mm and 2.9 ms, respectively.     

Numerical Nahm transform for 2-caloron solutions

A new numerical method for performing the Nahm transform for charge k=2 caloron is presented. The Weyl equations with boundary impurities are solved directly and the determination of the appropriate basis to the linear system is established. The action densities of the 2-calorons with 10 moduli parameters are shown.     

Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

Shockley partial dislocations in 4H-SiC were observed using monochromatic synchrotron X-ray topography with a grazing-incidence Bragg-case geometry, that is, Berg–Barrett topography. The contrast of partial dislocations at the edges of Shockley-type stacking faults is discussed in terms of whether they have C- or Si-core edge components, or screw components. The dissociated state of basal-plane dislocation is discussed on a basis of the stacking sequence for basal-planes in the 4H-SiC crystal structure. It is expected that the results obtained in this study will be useful for characterizing Shockley-type stacking faults in Berg–Barrett topography.     

Hyperfine structure of the electron spin resonance of phosphorus-doped Si nanocrystals

Electronic states of P donors in Si nanocrystals (nc-Si) embedded in insulating glass matrices have been studied by electron spin resonance. Doping of P donors into nc-Si was demonstrated by the observation of optical absorption in the infrared region due to intraconduction band transitions. P hyperfine structure (hfs) was successfully observed at low temperatures. The observed splitting of the hfs was found to be much larger than that of the bulk Si:P and depended strongly on the size of nc-Si. The observed strong size dependence indicates that the enhancement of the hyperfine splitting is caused by the quantum confinement of P donors in nc-Si.