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311.
Narihiko Maeda Takehiko Tawara Tadashi Saitoh Kotaro Tsubaki Naoki Kobayashi 《physica status solidi (a)》2003,200(1):168-174
For fully exploiting high potentiality of AlGaN/GaN heterostructure field‐effect transistors (HFETs) for high‐power applications, back‐doping (BD) and channel doping (CD) designs have been proposed that make it possible to obtain high two‐dimensional electron gas (2DEG) densities even for the devices with thin AlGaN barrier layers. Furthermore, a novel metal–insulator–semiconductor (MIS) HFET using a bi‐layer of Al2O3/Si3N4 thin film has been proposed to efficiently suppress the gate leakage current in the devices with thin barrier layers, by taking advantage of highly‐resistive Al2O3 layers and excellent quality of Si3N4/AlGaN interface. In BD and CD designs where an asymmetric double‐heterostructure and a single‐heterostructure are employed, respectively, donor atoms are additionally doped in the backside region beneath the 2DEG position and electrons are supplied also from these doped regions. By using BD and CD designs, very high 2DEG densities around 3 × 1013 cm−2 have been achieved in the Al0.3Ga0.7N/GaN HFETs whose barrier layer (Al0.3Ga0.7N) is designed to be as thin as 120 Å. A BD‐HFET with the gate‐length (Lg) of 1.5 μm has exhibited a high current density (Id) of 1.2 A/mm and a high transconductance (gm) of 200 mS/mm, which is ascribed to high 2DEG densities and thin barrier layers in these devices. A novel MIS structure mentioned above has been applied to CD‐HFET, and a fabricated MIS CD‐HFET with Lg = 1.5 μm has exhibited a state‐of‐the‐art current density of 1.6 A/mm and gm = 145 mS/mm, along with reduced gate leakage current. Thus, BD‐ and CD‐HFETs, combined with Al2O3/Si3N4 MIS structure, are promising for high‐power applications and should be inevitably required in the future for further improving the device performance. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
312.
Ruiping Wang Rong‐Jun Xie Kotaro Hanada Kunio Matsusaki Hiroshi Bando Mitsuru Itoh 《physica status solidi (a)》2005,202(6):R57-R59
The dielectric and the piezoelectric properties of the (1–x)(Na0.5K0.5)NbO3–xSrTiO3 ceramics, densified by the Spark‐Plasma‐Sintering method, have been studied. A phase diagram was established from the temperature dependence of the dielectric constant. A tetragonal–orthorhombic morpho‐tropic phase boundary (MPB) was found at x ∼ 0.05. Around the MPB, piezoelectric properties were greatly improved. The origin for the enhanced piezoelectricity has been proposed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
313.
Yuya Nishio Kotaro Yubata Yutaro Wakai Kotaro Notsu Katsumi Yamamoto Hideki Fujiwara Hiroshi Matsubara 《Tetrahedron》2019,75(10):1398-1405
Although molecular bromine (Br2) is a useful brominating reagent, it is not easy to handle. Herein, we describe the preparation of a novel air-stable bromine complex prepared from 1,3-dimethyl-2-imidazolidinone (DMI) and Br2, which was identified to be (DMI)2HBr3 by spectral and X-ray techniques. This complex was then used to brominate olefins, carbonyl compounds, and aromatics, as well as in the Hofmann rearrangement. Yields of reaction products using this complex were almost the same or superior to those using other bromine alternatives. 相似文献
314.
315.
316.
317.
A 5-endo-trig alkene insertion proceeds under palladium catalysis via aminopalladium species starting from 3,3-difluoroallyl ketone O-pentafluorobenzoyloximes, providing a facile access to 5-fluoro-3H-pyrroles. 相似文献
318.
Let T be a bounded linear
operator on a complex Hilbert space H.
T $/in$ B(H)
is called a log-hyponormal operator if T
is invertible and log (TT
*) log (T
*
T).
Since a function log : (0,) (-,) is operator
monotone, every invertible p-hyponormal operator T, i.e., (TT
*)
p
(T
*
T
p
is log-hyponormal for 0 < p 1. Putnams inequality for p-hyponormal operator
T is the following:$ \| (T^*T)^p-(TT^*)^p \|\leq\frac{p}{\pi}\int\int_{\sigma(T)}r^{2p-1}drd\theta $.In this paper, we prove that if T is log-hyponormal, then$ \| log(T^*T)-log(TT^*) \|\leq\frac{1}{\pi}\int\int_{\sigma(T)}r^{-1}drd\theta $. 相似文献
319.
A new class of polymerizations was developed via metal-catalyzed C-C bond forming radical polyaddition; the monomers were designed to have a reactive C-Cl bond, which can be activated by the metal catalysts to generate a carbon radical species, along with a C=C double bond, to which the carbon radical generated from another molecule adds to form a C-C backbone polymer with an inactive C-Cl pendant. 相似文献
320.
Here we show a simple and convenient method to prepare micropatterned gels by the use of a microscope, without large-scale or special-order experimental setup. UV light focused by an objective lens was locally irradiated to a pre-gel solution in a microchannel. This method would be useful for preparing microgels at target positions in microchips. A controlled drug-release microchip has actually been fabricated by utilizing this local photo-irradiation method, and pulsatile drug release in response to temperature changes was demonstrated. 相似文献