An Exceptional Set in the Ergodic Theory of Markov Maps of the Interval

It is known that a Markov map T of the unit interval preservesa measure µ, say, equivalent to Lebesgue measure, andthat almost every point of the interval has a forward orbitunder T that is uniformly distributed with respect to µ.In the opposite direction the main result of this paper statesthat there is a set of points having Hausdorff dimension 1 whoseforward orbits are in a certain sense very far from being sodistributed. 1991 Mathematics Subject Classification: 58F08,28A80.     

Dielectric relaxation processes in epoxy resin—ZnO composites

Polymer matrix‐ZnO microcomposites were prepared in different filler concentrations. The electrical relaxation dynamics of all samples was examined by means of broadband dielectric spectroscopy (BDS) over a wide temperature range. Two relaxation modes (namely β and γ), observed in the low temperature region, are attributed to the reorientation of small polar groups of the polymer matrix. Glass‐rubber transition (α‐mode) of the polymeric matrix and interfacial polarization phenomena are considered as responsible for the recorded relaxation processes in the high temperature region. An additional relaxation mode, named intermediate dipolar effect (IDE), is recorded at temperatures higher than ?30 °C in all composites. Its occurrence and dynamics are related to the presence and concentration of the filler. IDE and α‐relaxation are observed in the same frequency and temperature range, leading to a mutual superposition. The two processes were distinguished following a simulation procedure employing the simultaneous fitting of two Havrilliak‐Negami terms and a third term describing the contribution of DC conductivity to dielectric losses. The temperature dependence of relaxation times for α‐mode follows the Vogel‐Tamann‐Fulcher equation, whereas IDE relaxation times follow unusual temperature dependence. The latter is discussed under the assumption of intrinsic interfacial polarization phenomena within ZnO crystal domains. © 2009 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 47: 445–454, 2009     

Laser annealing of Al implanted silicon carbide: Structural and optical characterization

Pulsed-laser-based methods have been applied for post-implant annealing of p-type Al-doped 4H-SiC wafers in order to restore the crystal structure and to electrically activate the doping species. The annealing was performed with the third harmonic (355 nm) of a Nd:YAG laser at 4 ns pulse duration. The epilayers were characterized by micro-Raman spectroscopy under surface and cross-sectional backscattering. Changes in the phonon mode-intensity were related to the laser annealing induced recrystallization of the implanted material. The results were compared with changes in the infrared reflectivity across the Reststrahlen band. Transmission electron microscopy analysis showed the formation of columnar polycrystalline structure after the laser annealing process.