大面积染料敏化太阳电池的串联阻抗特性研究

在电子扩散微分方程的基础上,研究了染料敏化太阳电池光生电流和光生电压随光照强度不同的变化关系.提出敏化太阳电池串联阻抗功率损耗模型,理论模拟了大面积电池（有效面积>1 cm²）光电转换效率随多孔薄膜有效面积宽度变化的曲线、透明导电基底膜与银栅极的比接触电阻以及在不同入射光强下银栅极体电阻对大面积染料敏化太阳电池光伏性能的影响.结果表明透明导电基底膜的方块电阻和银栅极体电阻对大面积染料敏化太阳电池的性能有很大影响,而这种影响随光强的减弱逐渐减小. 关键词： 染料敏化 太阳电池 串联阻抗 光电转换效率     

斜入射分层线性各向异性等离子体电磁散射时域有限差分方法分析

提出了斜入射分层线性各向异性等离子体电磁散射的时域有限差分(FDTD)方法,通过将二维麦克斯韦方程等价地转换为一维麦克斯韦方程,避免了用二维时域有限差分方法分析该散射问题,极大地提高了计算效率.分析推导了TEz和TMz波斜入射线性分层各向异性等离子体电磁散射的FDTD方法,然后通过该方法计算不同入射角的各向异性等离子板的电磁波反射系数,并与其解析解进行比较,结果表明该方法的准确性和有效性.最后,将该算法应用于计算涂覆分层各向异性等离子体金属板在不同入射角下的反射系数,分析了不同入射角对反射系数的影响.     

太赫兹场辅助的单量子阱自旋共振输运

在考虑自旋轨道耦合的情况下,研究了通过一非磁性半导体异质结的太赫兹光子驱动的电子输运,研究结果显示频率相关的电导谱出现不对称的Fano型共振的劈裂;随着振荡场幅度的增加,多光子辅助过程出现;通过改变外加场参数,可以实现自旋过滤目的,特别是在干涉相消Fano型共振的频率位置时,出现了100%纯的自旋极化流.这些属性有助于大范围可调的自旋过滤器的实现并且可以得到纯的自旋透射流.     

低强度飞秒激光激发下CdTe和CdTe/CdS核壳量子点的荧光上转换研究

利用400 nm和800 nm不同波长的低强度飞秒激光,对CdTe和CdTe/CdS核壳量子点溶胶进行激发,研究其稳态和时间分辨荧光性质.800 nm飞秒激光激发下,CdTe和CdTe/CdS核壳量子点产生上转换发光现象,上转换荧光峰与400 nm激发下的荧光峰相比蓝移最多达15 nm,而且蓝移值与荧光量子产率有关.变功率激发确认激发光功率与上转换荧光强度间满足二次方关系,时间分辨荧光的研究表明荧光动力学曲线服从双e指数衰减.提出表面态辅助的双光子吸收模型是低激发强度上转换发光的主要机理.CdTe和CdT 关键词： CdTe量子点 CdTe/CdS核壳量子点 时间分辨荧光 上转换荧光     

Ferroelectric polarization-controlled two-dimensional electron gas in ferroelectric/AlGaN/GaN heterostructure

The control effect of the ferroelectric polarization on the two-dimensional electron gas (2DEG) in a ferroelectric/AlGaN/GaN metal–ferroelectric–semiconductor (MFS) structure is theoretically analyzed by a self-consistent approach. With incorporating the hysteresis nature of the ferroelectric into calculation, the nature of the control effect is disclosed, where the 2DEG density is depleted/restored after poling/depoling operation on the MFS structure. The orientation of the ferroelectric polarization is clarified to be parallel to that of the AlGaN barrier, which, based on an electrostatics analysis, is attributed to the pinning effect of the underlying polarization. Reducing the thickness of the AlGaN barrier from 25 nm to 20 nm leads to an improved control modulation of the 2DEG density from 36.7% to 54.1%.     

10.6μm激光诱导扩散中热致破坏的抑制

在半导体激光诱导扩散实验中,用连续波CO2 10．6μm激光聚焦后照射基片表面。为实现局部区域的选择扩散,激光光斑半径仅数十微米。要使曝光区温度达到扩散实验要求,必须使曝光区功率密度很高。另一方面,Si、InP等半导体材料对10．6μm波长激光的吸收系数随温度的升高而增大,这导致实验时容易产生热致破坏,损伤基片。在分析热致破坏的产生机理后,提出了在聚焦激光束照射下,曝光区温度的数值计算方法。计算结果表明,在半导体基片初始温度为室温时,以恒定功率的激光束照射基片,曝光区温度不能稳定在扩散试验需要的温度范围。在此基础上,提出了预热基片及对曝光区温度进行实时控制等抑制热致破坏的方法,有效地克服了这一困难。这对于用激光微细加工制作出高性能的单片光电集成电路(OEICs)器件有重要意义。     

Role of gallium wetting layer in high-quality ZnO growth on sapphire (0001) substrates

ZnO is a wide direct bandgap (Eg=3.37 eV at room temperature) II-VI compound semiconductor of wurtzite structure (a = 3.249 ? c = 5.207 ?. Compared to GaN and ZnS, ZnO has a larger exciton binding energy, ~60 meV (cf. ~25 meV for GaN and ~40 meV for ZnS), which is advantageous to realizing low-threshold excitonic lasers. Since optically pumped UV lasing of ZnO at room temperature was reported in 1997[1], much attention has been paid to the crystal quality improvement and p-type conduc…     

增益介质的色散对锁模激光器输出脉宽和啁啾的影响

利用时间域内各光学元件的传播矩阵,在考虑了增益介质的色散后,对锁模激光器输出的脉宽和啁啾做了理论方面的推导,并做了相关的数值模拟,结果表明:当不考虑增益介质的色散时,其输出脉宽啁啾值为零;而考虑了增益介质的色散后,啁啾值随色散值的增加先增加而后降低,且存在一个最大值,脉宽随色散值的增加而增加.     

10瓦级双包层光纤激光器

考虑到所用大功率激光二极管的光谱特性，对光纤激光器的基本法布里-珀罗腔型稍加改变，研制出激光二极管抽运的10w级双包层光纤激光器，获得最高功率为11．8w、波长1100mm的单模激光输出。     

Concentric-ring structures in an atmospheric pressure helium dielectric barrier discharge

This paper performs a numerical simulation of concentric-ring discharge structures within the scope of a two-dimensional diffusion--drift model at atmospheric pressure between two parallel circular electrodes covered with thin dielectric layers. With a relative high frequency the discharge structures present different appearances of ring structures within different radii in time due to the evolvement of the filaments. The spontaneous electron density distributions help understanding the formation and development of self-organized discharge structures. During a cycle the electron avalanches are triggered by the electric field strengthened by the feeding voltage and the residual charged particles on the barrier surface deposited in the previous discharges. The accumulation of charges is shown to play a dominant role in the generation and annihilation of the discharge structures. Besides, the rings split and unify to bring and annihilate rings which form a new discharge structure.