Gas-phase reactions of tetrachlorogermane with chlorothiophenes in the presence of hexachlorodisilane. Synthesis of thienylchlorogermanes

Gas-phase reactions of dichlorogermylenes formed in the GeCl₄-Si₂Cl₆ system with 2-chlorothiophene, 2,5-dichlorothiophene, 2,5-dichloro-3-methylthiophene, and 5-chloro-2-trimethylsilylthiophene is studied. It is shown that :GeCl₂ is inserted into the chlorothiophene C-Cl bond to form the derivatives containing one or two trichlorogermyl groups. In the reaction with 5-chloro-2-trimethylsilylthiophene, the insertion of :GeCl₂ into the C-Cl bond yielding 5-trichlorogermyl-2-trimethylsilylthiophene is accompanied by the exchange of the Me₃Si group with the trichlorogermyl group to form 2,5-bis(trichlorogermyl)thiophene. The reactions occurring in the course of the synthesis of thienylchlorogermanes are considered.     

Structure of radical anions of organosilicon compounds. INDO calculations of the radical anions of some organosilicon compounds

M. V. Lomonosov Moscow Institute of Fine Chemical Engineering. Translated from Zhurnal Strukturnoi Khimii, Vol. 29, No. 2, pp. 24–30, March–April, 1988.