Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

We report on electron g-factor in an InAs-inserted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In_0.53Ga_0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.     

ESR study of Cu(II) ion complexes adsorbed on interlamellar surfaces of montmorillonite

Oriented films of Cu(II)-montmorillonite before and after adsorption of pyridine, glycine and $\text{b}\text{?}$-alanine showed markedly orientation-dependent ESR spectra. Complex formation of Cu(II) ions with the adsorbates was indicated by changes in ESR parameters. The ESR spectra and parameters suggest that the complexes formed on the interlamellar surfaces of montmorillonite have planar or axially elongated tetragonal structures and that the symmetry axes of the complexes are oriented perpendicularly to the aluminosilicate layers of the clay.     

Nanoparticles in Emissions and Atmospheric Environment: Now and Future

Journal of Nanoparticle Research -