Preparation, structural analysis and dielectric properties of Bi x La1−x FeO3 perovskite

Rare earth element substituted bismuth ferrites (BiFeO₃) are of enormous importance as magnetoelectric materials. The polycrystalline samples of Bi _x La_1−x FeO₃ (x=0, 0.2, 0.4, 0.6, 0.8) were prepared by solid-state reaction using standard ceramic method. The single-phase formation of these compounds was confirmed by X-ray diffraction (XRD) studies. The samples with x=0, 0.2, 0.4, 0.6 are found to be orthorhombic while the sample with x=0.8 is triclinic. The dielectric constant (ε′) and dissipation factor (tan δ) were measured in the frequency range 100 Hz to 1 MHz at room temperature and as a function of temperature at certain fixed frequencies (1 kHz, 10 kHz, 100 kHz, 1 MHz). All the samples showed dielectric dispersion. The dielectric constant with temperature shows a broad peak; the peak temperature shifts with frequency which reflects the relaxor-type behavior. The peak above 600 K in the measured temperature range corresponds to antiferromagnetic ordering temperature (Néel temperature). The broadness of the peak changes with composition. The ac conductivity as well as ε′ are found to be maximum for the sample x=0.2 at room temperature.     

Magnetoelectric effect in cobalt ferrite-barium titanate composites and their electrical properties

CoFe₂O₄-BaTiO₃ composites were prepared using conventional ceramic double sintering process with various compositions. Presence of two phases in the composites was confirmed using X-ray diffraction. The dc resistivity and thermoemf as a function of temperature in the temperature range 300 K to 600 K were measured. Variation of dielectric constant (ɛ′) with frequency in the range 100 Hz to 1 MHz and also with temperature at a fixed frequency of 1 kHz was studied. The ac conductivity was derived from dielectric constant (ɛ′) and loss tangent (tan δ). The nature of conduction is discussed on the basis of small polaron hopping model. The static value of magnetoelectric conversion factor has been studied as a function of magnetic field.     

Distributed order calculus and equations of ultraslow diffusion

We consider equations of the form

     

Genesis of the active-component precursor in the synthesis of Pt/Al2O3 catalysts: II. Synthesis of platinum hydroxo complexes on the alumina surface as precursors of the active component of Pt/Al2O3 catalysts

The thermal hydrolysis of chloroplatinate adsorbed on γ-Al₂O₃ is a possible approach to the synthesis of surface platinum hydroxo complexes as precursors to the active component of supported platinum catalysts. It is demonstrated by EXAFS and diffuse reflectance spectroscopy that the surface chloro complexes undergo deep hydrolysis under hydrothermal conditions at various processing times and temperatures. The average oxygen coordination number of platinum in these complexes is as large as 4.5. According to gradient elution data obtained using both the competitive replacement of adsorbed complex anions and variation of the charged state of the oxide surface, the resulting hydrolyzed precursor differs from the conventional chloride precursor in the nature of binding to the surface and interacts with alumina via a coordination mechanism.     

多光子过程中相位退相干时两原子布局数反转

利用全量子理论的方法,研究了存在相位退相干时多光子T-C模型中两个二能级原子与二项式光场相互作用系统中两原子的布居数反转。讨论了相位退相干系数、二项式光场系数、最大光子数、跃迁光子数对原子布居数反转的影响。结果表明：相位退相干减少了原子布居数反转的振幅、破坏了原子的量子特性。改变跃迁光子数,可以改变原子间布居数反转演化周期及演化强度。当二项式光场的最大光子数增大时,原子布居差的崩塌-回复现象就会逐渐消失。相位退相干因子不变时, 二项式光场从相干态过渡到数态过程中,原子布居的振荡频率由大变小,周期性的崩塌与回复现象逐渐消失。     

The First Principles Investigations of the Thermoelectric Properties of GaN with p- and n-Type Doping

We investigate the thermoelectric properties of GaN with p-and n-type doping by the first principles calculation and the semi-classical Boltzmann theory. We find that the power factors (S2σof p-type GaN (-3500 W/mK2) is about twice that of the n-type (-1750 W/mK2), which indicates the thermoelectric properties of p-type GaN would be better. Thermal conductivity of GaN crystal decreases rapidly as the temperature increases, but it is still too large for thermoelectric applications. The figure of merit (ZT) estimated at 1500 K is 0.134 for p-type GaN crystal and 0.062 for the n-type.     

Semiconductor nanostructures modified by the UV laser radiation

The shortening of the absorption recovery time by a factor of more than 50 is observed for the semiconductor nanostructure consisting of ten GaAs/In _x Ga_1-x As/GaAs quantum wells irradiated with the nanosecond pulses of the XeCl laser.A possible reason for such a significant variation in the optical properties lies in the generation of point defects,which are responsible for recombination of charge carriers.The result can be employed in the UV photomodification of optical properties of semiconductor nanostructures.     

QCD PERTURBATION THEORY AND NUCLEI (1) THE ENERGY SHIFTS OF HADRENS AND HADRONS MASS DIFFERENCE MASS DIFFERENCE

QCD perturbation theory for confined quarks and gluons (inhadrons) is discussed.Based on the equivalent potential for the quark-gluon interaction derived, the energyshifts of hadrons and hadron mass difference in MIT bag (cavity) model and correcpond-ing approximation of the w. f. with Gassian form are calculated.     

Theoretical Investigations of Nonlinear Optical Properties of Transition Metal Cluster Anions

In the framework of density functional theory （DFT）, the electronic excitations and nonlinear optical （NLO） properties of six binuclear transition metal cluster anions with the formula of [Ch2M-（μ-Ch）2-M＇CN]^2- （M = Mo, W; Ch = S, Se; M＇ = Cu, Ag） have been systemically investigated at both cases of gas phase and DMF solution. The obtained electronic absorption spectra reveal that the element replacements of metals M and ligands Ch have significant influence on the absorptions, especially on the low-lying ones. In addition, the transitions of μ-Ch→M are dominant for the low-lying excitations, whereas the transitions of M＇→M as well as Ch→M are mainly responsible for the higher excitations. The calculated molecular first and second hyperpolarizabilities present the remarkable element substitution and solvent effects. The analyses show that the transitions involving μ-Ch→M charge transfer make the critical contributions to the first hyperpolarizability t, and that the charge transfers from the moieties of MCh4 to M＇CN as well as those of μ-Ch→M and M＇→M are responsible for the second hyperpolarizability y. Moreover, the introduction of solvent leads to the results that the transitions within the moieties of MCh4 and M＇CN make larger contributions to the hyperpolarizability, especially to γ.