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We discuss an error estimation procedure for the global error of collocation schemes applied to solve singular boundary value problems with a singularity of the first kind. This a posteriori estimate of the global error was proposed by Stetter in 1978 and is based on the idea of Defect Correction, originally due to Zadunaisky. Here, we present a new, carefully designed modification of this error estimate which not only results in less computational work but also appears to perform satisfactorily for singular problems. We give a full analytical justification for the asymptotical correctness of the error estimate when it is applied to a general nonlinear regular problem. For the singular case, we are presently only able to provide computational evidence for the full convergence order, the related analysis is still work in progress. This global estimate is the basis for a grid selection routine in which the grid is modified with the aim to equidistribute the global error. This procedure yields meshes suitable for an efficient numerical solution. Most importantly, we observe that the grid is refined in a way reflecting only the behavior of the solution and remains unaffected by the unsmooth direction field close to the singular point. 相似文献
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D. Chiladze J. Carbonell S. Dymov V. Glagolev M. Hartmann V. Hejny A. Kacharava I. Keshelashvili A. Khoukaz H.R. Koch V. Komarov P. Kulessa A. Kulikov G. Macharashvili Y. Maeda T. Mersmann S. Merzliakov S. Mikirtytchiants A. Mussgiller M. Nioradze H. Ohm F. Rathmann R. Schleichert H.J. Stein H. Ströher Yu. Uzikov S. Yaschenko C. Wilkin 《Physics letters. [Part B]》2006
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The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation. 相似文献
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Frank Rutz Martin Koch Shilpa Khare Martin Moneke Heike Richter Uwe Ewert 《International Journal of Infrared and Millimeter Waves》2006,27(4):547-556
We report on experiments that evaluate the potential of terahertz (THz) time-domain spectroscopy (TDS) for quality control
of polymeric compounds. We investigate specimens out of a polyethylene compound with silver-coated titanium dioxide nanospheres
and a glass-fiber reinforced epoxy composite. We further examine an industrial polymer product produced by injection molding.
Our data demonstrates that THz imaging is a powerful tool for contactless quality control in the polymer industry. 相似文献
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Bruni C. Bruni R. De Santis A. Iacoviello D. Koch G. 《Journal of Optimization Theory and Applications》2002,115(1):67-96
In this paper, a procedure is presented which allows the optimal reconstruction of images from blurred noisy data. The procedure relies on a general Bayesian approach, which makes proper use of all the available information. Special attention is devoted to the informative content of the edges; thus, a preprocessing phase is included, with the aim of estimating the jump sizes in the gray level. The optimization phase follows; existence and uniqueness of the solution is secured. The procedure is tested against simple simulated data and real data. 相似文献