Characteristics of Gain-Guided Laser Diodes with Cylindrical-Mirror Cavity

We have developed highly reliable etched-mirror laser diodes using a dry etching method. The lasers without facet-coating have been operating stably over 2500 h under automatic-power control (APC) at a power of 3 mW/facet at 50°C. The gain-guided laser diodes with a cylindrical-mirror cavity (CMC) have coaxial mirrors and a fan-shaped stripe structure. By decreasing the curvature radius of the inner facet or increasing the stripe width of the inner facet, the beam waist parallel to the junction plane can be moved outside of the laser diode, while the beam waist perpendicular to the junction plane stops at the mirror facet. A particular CMC laser has a low astigmatism of 4.1 μm and a low relative intensity of noise (RIN) less than –134 dB/Hz at 4 mW under 0–1% optical feedback without high frequency current superposition.     

Partial-wave analysis of the ωπ0-system at high masses

A partial-wave analysis of the ω ωπ⁰-system produced in the π^- p→ωπ⁰ n reaction at 38 GeV/c beam momentum has been performed. A new 5^?- meson state,ρ ₅(22350), with a massM=2330±35 MeV and a width Γ=400±100 MeV, is observed. The analysis also confirms the 1^?- ρ(2150) meson, a radial-orbital excitation of the ρ(770), observed earlier by the GAMS Collaboration.     

Real-time spectroscopy of Frenkel exciton system

We performed selective excitations of the first- and second-excited Frenkel exciton states (Q- and B-excitons) with use of sub-40-fs and sub-5-fs visible laser pulses. The transient absorption signals exhibit oscillatory features associated with molecular vibrations. From an analysis of the spectral profiles of the phase and amplitude of the oscillation, the experimental result is well explained by the modulated transition dipole moment, which is caused by the dynamic intensity borrowing from the intense B-transition to the weak Q-transition.     

Monitoring of Paint Drying Process by Digital Speckle Correlation

The state of drying paint is monitored from the dynamic behaviors of the speckle pattern arising from laser illumination of the region inspected. Temporal variation of the peak height of the cross-correlation function between successive frames taken with a fixed interval is plotted until the peak maintains a stationary maximum value. We used a speckle pattern in the diffraction field for monitoring of a single region and that in the image field for simultaneous monitoring of various regions. Both the normal and the phase-only algorithms were compared for cross-correlation computation. The former showed more distinct variation of peak height.     

Tamper resistance in optical excitation transfer based on optical near-field interactions

We present tamper resistance in optical excitation transfer via optical near-field interactions based on the energy dissipation process occurring locally in nanometric devices such as quantum dots. A theoretical comparison with electrical systems is also shown, focusing on the required environmental conditions. Numerical simulations based on virtual photon models demonstrate high tamper resistance.     

Influence of processing variables on the formation of La2Zr2O7 in transferred arc plasma torch processing

The transferred arc plasma (TAP) torch process has various noteworthy features such as extremely high temperatures, low environmental impact and short processing time which makes it the most suitable technique for synthesizing ceramic composite materials. Furthermore, it is a direct two-step technique which by its virtue of high temperature and power density paves way for high production rate. Hence in this study, an effort has been made to utilize the TAP torch processing technique for the bulk production of La₂Zr₂O₇ with time effectiveness from the mixture of La₂O₃ and ZrO₂ powders (1:2 mol ratios) which were ball milled for 4 h. For this purpose, transferred arc plasma torch was specially designed in laboratory scale level and the operating parameters were optimized in order to achieve maximum La₂Zr₂O₇ formation efficiency. In this study, the phase and microstructure formation of the processed samples was analyzed via X-ray diffraction (XRD) and scanning electron microscope (SEM) images respectively. Moreover, EDX analysis was incorporated to highlight the superior influence of the longer processing time on the stoichiometric ratio of ZrO₂/La₂O₃ in the processed sample as against input power and the gas flow rate.     

Conductance quantization and magnetoresistance in magnetic point contacts

We theoretically study the electron transport through a magnetic point contact (PC) with special attention given to the effect of an atomic scale domain wall (DW). The spin precession of a conduction electron is forbidden in such an atomic scale DW and the sequence of quantized conductances depends on the relative orientation of magnetizations between left and right electrodes. The magnetoresistance is strongly enhanced for the narrow PC and oscillates with the conductance.     

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

A set of MOS structures with thin SiO₂ layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U _ac - V _G curves). By comparing the A-DLTS spectra, U _ac - V _G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.     

Octave-spanning carrier-envelope phase stabilized visible pulse with sub-3-fs pulse duration

The visible second harmonic of the idler output from a noncollinear optical parametric amplifier was compressed using adaptive dispersion control with a deformable mirror. The amplifier was pumped by and seeded in the signal path by a common 400 nm second-harmonic pulse from a Ti:sapphire regenerative amplifier. Thus, both the idler output and the second harmonic of the idler were passively carrier-envelope phase stabilized. The shortest pulse duration achieved was below 3 fs.