High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Measurements of theg-factor ratio of the first 3− and 5− states in40Ca and the lifetime of the 5− state

[Theg-factor ratio of the first excited 3^? and 5^? states in⁴⁰Ca was measured to beg ₃/g ₅=1.01(10) employing the implantation perturbed angular correlation technique. The static hyperfine fields (SF) in Fe and Gd hosts were used. In addition the lifetime of the 5^? state was measured to be τ=426(7)ps. The values of the SF in Gd and Fe hosts were deduced and compared with systematics in this element region.     

Resolvability properties via independent families

The authors give a consistent affirmative response to a question of Juhász, Soukup and Szentmiklóssy: If GCH fails, there are (many) extraresolvable, not maximally resolvable Tychonoff spaces. They show also in ZFC that for ω<λ?κ, no maximal λ-independent family of λ-partitions of κ is ω-resolvable. In topological language, that theorem translates to this: A dense, ω-resolvable subset of a space of the form (DI(λ)) is λ-resolvable.     

Oxygen-distribution imaging with a novel two-tracer laser-induced fluorescence technique

We introduce a new technique for imaging oxygen concentrations in fuel/air mixtures that takes advantage of the different responses of toluene and 3-pentanone to collisional quenching by molecular oxygen. Since laser-induced fluorescence signals from both tracers upon excitation at 248 nm are spectrally well separated, simultaneous detection is possible. The technique is first applied to instantaneous imaging in turbulent mixing processes of interacting seeded air and nitrogen flows. Received: 1 August 2001 / Revised version: 29 October 2001 / Published online: 29 November 2001     

Si衬底上ZnSe外延膜的低压MOCVD生长

以硒化氢（H2Se）和二甲基锌为源材料，生长温度是300℃时，用低压金属有机化学气相沉积（LP－MOCVD）系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量，在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰，这说明外延膜是（111）取向的单晶薄膜，在能量色散谱中除了Si,Zn和Se原子外，没有观测到其他原子，说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1，有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰，表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。     

Vibrational Dynamics Studies by Nuclear Resonant Inelastic X-Ray Scattering

Nuclear resonant inelastic X-ray scattering of synchrotron radiation is being applied to ever widening areas ranging from geophysics to biophysics and materials science. Since its first demonstration in 1995 using the ⁵⁷Fe resonance, the technique has now been applied to materials containing ⁸³Kr, ¹⁵¹Eu, ¹¹⁹Sn, and ¹⁶¹Dy isotopes. The energy resolution has been reduced to under a millielectronvolt. This, in turn, has enabled new types of measurements like Debye velocity of sound, as well as the study of origins of non-Debye behavior in presence of other low-energy excitations. The effect of atomic disorder on phonon density of states has been studied in detail. The flux increase due to the improved X-ray sources, crystal monochromators, and time-resolved detectors has been exploited for reducing sample sizes to nano-gram levels, or using samples with dilute resonant nuclei like myoglobin, or even monolayers. Incorporation of micro-focusing optics to the existing experimental setup enables experiments under high pressure using diamond-anvil cells. In this article, we will review these developments. This revised version was published online in August 2006 with corrections to the Cover Date.     

宽带Ⅱ-Ⅵ族半导体及其低维结构的生长和光学性质研究进展

本文系自1979年以来，宽带Ⅱ-Ⅵ族半导体研究组取得的主要研究成果的简要介绍。取得的主要研究成果可分为如下六个方面：第一，系统地研究了宽带Ⅱ-Ⅵ族半导体在电场激发下的自由激子发射；第二，创造性地提出并实 利用宽带Ⅱ-Ⅵ族超晶格的室温激子效应来实现在蓝绿区快响应的光学双稳的物理思想；第三，深入研究了宽带Ⅱ-Ⅵ族超晶格中的激子行为以及激子与元激发态的相互作用，为利用激子获得有效蓝色自发和受激发射提供物理基础和实验途径；第四，研究了ZnSe基非对称双量子阱和组合超晶格中激子的隧穿以及激子的自发和受激发射；第五，CdSe和ZnSeS自组装量子点的生长及其形成机理；第六，ZnO薄膜的生长及其紫外发射特性。     

The time recovery of the spectroscopic properties of heavily irradiated CdZnTe and CdTe detectors

The time recovery of the spectroscopic capabilities of CdZnTe and CdTe detectors, irradiated with increasing doses of high- and low-energy neutrons, as well as electrons, has been investigated by studying their spectroscopic behavior at different photon energies using leakage current measurements and PICTS (photo-induced current transient spectroscopy) analysis. The detectors were stored at room temperature for up to one year to study the time evolution of their spectroscopic performance and to correlate it with the presence of defective states in the material. We have observed a clear improvement in the material’s detection properties with time, though only in those detectors which have not been severely degraded by the irradiation. The recovery can be associated with a decrease in the concentration of some defective states, thus allowing the assessment of the crucial role these play in determining the charge collection processes in the material and its spectroscopic capabilities. Received: 1 August 2001 / Accepted: 3 August 2001 / Published online: 20 December 2001