Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.     

Reflective and photoacoustic infrared spectroscopic techniques in assessment of binding media in paintings

This study proposes a method to estimate the lipid content in binding media in paintings that can be used at any laboratory equipped with an infrared spectrometer. The lipid content estimator, termed greasiness index (GI), is defined as a ratio of lipid ν(C=O) and protein amide I bands at 1743 and 1635 cm⁻¹, respectively. Three Fourier transform infrared (FTIR) sampling techniques were evaluated for GI determination: reflective attenuated total reflection—ATR, specular reflection microscopy—μSR and photoacoustic—PAS. A set of model painting samples containing three tempera binding media (casein, egg, egg + oil), seven pigments and one varnish type were used in the study. Multivariate analysis was used to evaluate the resulting data. A good reproducibility of GI was obtained by ATR and PAS but not with μSR. The discriminative power of the technique is higher for unvarnished samples, but, generally, the GI estimator can be used for the categorisation of binding media in large populations of painting samples analysed with the same FTIR technique (sampling technique, detection, etc.).     

Transient binary nucleation from ethanol-hexanol vapour

We study condensation of ethanol-hexanol vapour by numerical solution of kinetic equations. The number of droplets formed in unit volume is computed within self-consistent classical model. It is shown that formation of ethanol-rich droplets prevails at the initial stage of nucleation process, but in the stationary state formation of droplets near the saddle point (on cluster formation energy surface) plays the dominant role. Presented at the 6th Joint Seminar “Development of Materials Science in Research and Education”, Karlštejn, Czech Republic, 17–19 September 1996. This work was supported by Grant No. A1010615 of the Grant Agency of the Academy of Sciences of the Czech Republic.     

A high statistics measurement of the Lambda(+)(c) lifetime

A high statistics measurement of the Lambda(+)(c) lifetime from the Fermilab fixed-target FOCUS photoproduction experiment is presented. We describe the analysis technique with particular attention to the determination of the systematic uncertainty. The measured value of 204.6 +/- 3.4 (stat) +/- 2.5 (syst) fs from 8034 +/- 122 Lambda(+)(c)-->pK(-)pi(+) decays represents a significant improvement over the present world average.     

Comment on “Entanglement of two interacting bosons in a two-dimensional isotropic harmonic trap” [Phys. Lett. A 373 (2009) 3833]

The correct form of the Schmidt decomposition of the stationary wave functions for a system of two interacting particles trapped in a two-dimensional harmonic potential is given.     

Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron–hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10–15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.