Indirect excitons and double electron-hole layers in a wide single GaAs/AlGaAs quantum well in a strong electric field

The recombination spectra of indirect excitons and double electron-hole layers in a wide single quantum well in an electric field are studied. It is found that electrons and holes in the wide well become spatially separated in a sufficiently strong electric field. This leads to a substantial reorganization of the radiative recombination spectrum and to a significant increase in the carrier lifetime. It is shown that the total charge of the electron-hole system can be changed by varying the photoexcitation frequency and the applied electric field, thus passing from the neutral case of indirect excitons to the case of charged double electron-hole layers. The concentration of excess carriers in the well is measured as a function of the electric field strength. The behavior of the excited states of indirect heavy-hole and light-hole excitions is studied for a neutral excitonic system in a strong electric field. It is shown that the electric-field dependences allow the excited states of indirect excitons with a light hole to be distinguished from the excited states with a heavy hole.     

Polyelectrolytes in thin liquid films

The review addresses the influence of polyelectrolytes on the statics and dynamics of thin liquid films. Both, changes of interfacial and bulk properties, contribute to the overall behaviour of thin films formed from aqueous polyelectrolyte solutions. Therefore, the chapter is separated into two parts: polyelectrolytes at film interfaces and polymers in film bulk.     

An observation by photoconductivity of strain splitting of shallow bulk donors located near to the surface in silicon mos devices

Photoconductivity is observed in n-channel inversion Si MOSFETS at 4.2 K at infrared frequencies up to 700 cm^?1. Two groups of sharp lines of opposite sign are observed in the regions of 300 and 650 cm^?1 together with a continuum of transitions starting at ～ 350 cm^?1. The sharp lines are interpreted as bound transitions from shallow neutral phosphorous donors and boron acceptors on either side of the depletion layer. The angular dependence of the Zeeman splitting of the sharp lines demonstrates that the normal 90° symmetry of the 100 surface is lifted for devices with thin metal gates due to the presence of a strong unixial stress component.     

Surface quantum oscillations in (110) and (111) n-type silicon inversion layers

Shubnikov-de Haas oscillations have been studied for (110) and (111) n-type silicon inversion layers. The measured cyclotron masses m_c = (0.38 ± 0.03)m₀ and m_c = (0.40 ± 0.03)m₀ for (110) and (111) planes, respectively, are larger than theoretically predicted values. The experimental valley degeneracy factor g_v = 2 ± 0.2 for both orientations is also at variance with self consistent calculations. The electronic g-factor depends on the surface carrier concentration and is enhanced over its bulk value. There was no evidence for the occupation of other subbands.     

Long-range interactions between soft colloidal particles in slit-pore geometries

Combining theoretical and experimental techniques, we investigate the structure formation of charged colloidal suspensions of silica particles in bulk and in spatial confinement (slit-pore geometry). Our focus is to identify characteristic length scales determining typical quantities, such as the position of the main peak of the bulk structure factor and the period of the oscillatory force profile in the slitpore. We obtain these quantities from integral equations/SANS experiments (bulk) and Monte Carlo simulations/colloidal probe-AFM measurements (confinement), in which the theoretical calculations are based on the Derjaguin-Landau-Verwey-Overbeck (DLVO) potential. Both in bulk and in the slitpore, we find excellent qualitative and quantitative agreement between theory and experiment as long as the ionic strength chosen in the DLVO potential is sufficiently low (implying a relatively long-ranged interaction). In particular, the bulk properties of these systems obey the widely accepted density scaling of xi proportional to phi(-1/3). On the other hand, systems with larger ionic strengths and, consequently, more short-ranged interactions do not obey such power law behavior and rather resemble an uncharged hard-sphere fluid, in which the relevant length scale is the particle diameter.     

Realization of dual,tunable, ordinary- and quantized-Hall resistances in doubly connected GaAs/AlGaAs heterostructures

An experimental configuration based on gated, double boundary GaAs/AlGaAs devices provides the first demonstration of dual distinct, tunable Hall resistances in the same sample over the weak- and strongmagnetic field limits, including the simultaneous observability of dual quantized Hall effects of dissimilar filling factors. These experiments suggest that the ordinary Hall resistance examined in experiment is essentially a topological resistance determined by connectivity, which need not reflect all “local” values of the off-diagonal resistivity, θ _M ρ _xy .