On the nature of the oscillations of cyclotron absorption in InAs/GaSb quantum wells

The mechanism of oscillations of the half-width and intensity of the cyclotron resonance (CR) line of electrons in a semimetal quantum well based on an InAs/AlSb/GaSb heterostructure is investigated experimentally and theoretically. It is shown that the oscillations of the CR spectrum are due to mixing of states of the spatially separated two-dimensional electrons and holes. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 10, 753–758 (25 November 1998)     

Comments on the hole mass in silicon inversion layers

Published experimental data for hole masses m_c in silicon inversion layers on (110), (111) and (100) surfaces are critically discussed. New results are presented for the (100) orientation. It is shown that self-consistent calculations of m_c agree with those experimental data, which are compatible with cyclotron resonance results. It is demonstrated that a theoretical treatment by Falicov and Garcia, which predicts too large hole masses, is not tenable.