Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga⁺ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.     

Multi-Wavelength Optical Packet Routing Technologies Based on Superstructured Fiber Bragg Gratings

A WDM compatible Edge-to-Edge Self-Routed optical packet switched network that simplifies the optical processing is proposed. The system employs all-optical packet label generation and recognition using coded superstructured Fiber Bragg gratings.     

Density Profiles in a Quantum Coulomb Fluid Near a Hard Wall

Journal of Statistical Physics - Equilibrium particle densities near a hard wall are studied for a quantum fluid made of point charges which interact via Coulomb potential without any...     

Existence and convergence for quasi‐static evolution in brittle fracture

This paper investigates the mathematical well‐posedness of the variational model of quasi‐static growth for a brittle crack proposed by Francfort and Marigo in [15]. The starting point is a time discretized version of that evolution which results in a sequence of minimization problems of Mumford and Shah type functionals. The natural weak setting is that of special functions of bounded variation, and the main difficulty in showing existence of the time‐continuous quasi‐static growth is to pass to the limit as the time‐discretization step tends to 0. This is performed with the help of a jump transfer theorem which permits, under weak convergence assumptions for a sequence {u_n} of SBV‐functions to its BV‐limit u, to transfer the part of the jump set of any test field that lies in the jump set of u onto that of the converging sequence {u_n}. In particular, it is shown that the notion of minimizer of a Mumford and Shah type functional for its own jump set is stable under weak convergence assumptions. Furthermore, our analysis justifies numerical methods used for computing the time‐continuous quasi‐static evolution. © 2003 Wiley Periodicals, Inc.     

Thickness decrease of a grafted polyelectrolyte membrane exposed to shear flow

The effect of the shear flow on the thickness change of a polyelectrolyte membrane grafted onto a glass substrate was directly investigated with a flow cell combined with a confocal laser scanning microscope. The membrane thickness decreased proportionally to an increase in the shear stress of the flow when the shear rate exceeded a critical value of 1 s^?1. The higher the ionic strength was of the fluid, the greater the thinning effect was. The correlation between the critical shear rate and the relaxation of the polymer in the gel membrane was examined. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2808–2815, 2003     

A modified Silver–Meal heuristic for dynamic lot sizing under incremental quantity discounts

This note presents a variation of the well-known Silver–Meal heuristic to deal with lot sizing under a combination of a known, but time-varying, demand pattern along with an incremental quantity discount structure. The heuristic is shown to perform very well on a set of experiments presented in a recent paper in this journal. Additional experiments are performed to further explore the time horizon effects on the relative performance of the newly proposed heuristic compared to the two best performing ones from the previous paper.     

Magnetic order in RCr\mathsf{_{2}}Si\mathsf{_{2}} intermetallics

The magnetic structure and ordering temperatures of three intermetallic compounds which crystallize in the tetragonal ThCr₂Si₂ structure, TbCr₂Si₂, HoCr₂Si₂ and ErCr₂Si₂, have been determined by neutron diffraction, differential scanning calorimetry and magnetization measurements. The Cr-sublattice orders anti-ferromagnetically with Néel temperatures of 758 K for TbCr₂Si₂, 718 K for HoCr₂Si₂ and 692 K for ErCr₂Si₂. Chromium atoms located at 4d crystallographic sites are aligned anti-parallel along the c-axis, with G_ZCr magnetic modes. In contrast with metallic bcc Cr, the refined room temperature value of the ordered Cr moment is anomalously large for all three compounds. No long range magnetic order of the R sublattice in TbCr₂Si₂ and HoCr₂Si₂ is observed, whilst the Er sublattice in ErCr₂Si₂ orders independently of the Cr sublattice below 2.4 K with moments ferromagnetically aligned in the basal plane.Received: 4 November 2003, Published online: 30 January 2004PACS: 75.25. + z Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source X-ray scattering, etc.) - 75.30.Cr Saturation moments and magnetic susceptibilities - 75.50.Ee Antiferromagnetics