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951.
The Fokker–Planck-type kinetic equation is constructed with the help of the evolution equation for the transverse energy of channelized particles, which in its turn is derived beyond the framework of perturbation theory proceeding from the condition of nonconcervation of the adiabatic invariant.  相似文献   
952.
The object of the present investigation is to introduce a new trigonometric method of summation which is both regular and Fourier effective and determine its status with reference to other methods of summation (see §2-§4) and also give an application of this method to determine the degree of approximation in a new Banach space of functions conceived as a generalized Holder metric (see §5).  相似文献   
953.
Atomic-force microscopy was used to study the surface topography of SiGe structures grown by epitaxial deposition of Ge on profiled Si(111) substrates under electromigration conditions. Systems of highly ordered germanium nanosized islands with dimensions of 10–20 nm and a density of 6×1010 cm?2 were obtained. It is shown that the geometrical parameters of self-organizing nanoislands can be controlled by a proper choice of the growth and postgrowth annealing conditions for these structures.  相似文献   
954.
The reactions of ethylene glycol mononitrate and glycerol 1,3-dinitrate with methylphosphonic dichloride afforded new nitroxyalkyl methylphosphonates.  相似文献   
955.
956.
It was found that a beta-fructofuranosidase produced by Microbacterium sp. H-1 has potent trans-beta-fructofuranosylation activity from sucrose (donor). By means of this enzyme system, rebaudioside A (RA), the second major sweet steviol glycoside of the leaves of Stevia rebaudiana, was subjected to transfructosylation, affording a mono-beta-fructofuranosylated product (RA-F) in a high yield. The structure of RA-F was elucidated as beta-D-fructofuranosyl-(2----6)-beta-D-glucopyranosyl ester of steviol-13-O-[beta-D-glucopyranosyl-(1----2)]- [beta-D-glucopyranosyl-(1----3)]-beta-D-glucopyranoside. Some improvement in the quality of sweetness was observed for RA-F.  相似文献   
957.
The literature on the synthesis of N-substituted xanthines by cyclization, recyclization, and N-substitution is reviewed.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 1, pp. 3–27, January, 1991.  相似文献   
958.
We study the asymptotics of some regression functions which occur in the study of high rejections of homogeneous Gaussian random fields.Translated from Statisticheskie Metody Otsenivaniya i Proverki Gipotez, pp. 143–148, 1988.  相似文献   
959.
A Hamiltonian version has been formulated for the model of axisymmetric equally rotating jet streams with a free boundary. In the framework of this approach, dominant structures, i.e., structure elements appearing in strongly disturbed jet streams at the preturbulent stage of their decay, are studied. It has been shown that compactons, i.e., solution with a compact support, can be such dominant structures. Analysis of the mechanism of the instability of compactons shows the possibility of collapse, which occurs almost without deformation of their shape but leads to the intensification of the vortex sheet at the boundary according to the law (t 0 ? t)?1, where t 0 is the collapse time.  相似文献   
960.
The deformation surrounding Vickers indentations on InGaAsP/InP epilayers have been studied in detail. The surface topography was characterized by using atomic force microscopy (AFM). The material pile-up and sink-in regions around the indentation impression was observed for the quaternary InGaAsP/InP epilayers. The sectional analysis mode of the AFM shows the depth profile at the indented region. Microindentation studies were carried out for different atomic fraction of the quaternary InGaAsP/InP compound semiconductor alloys. The microhardness values of InGaAsP/InP epilayers were found to be in the range of 5.08 and 5.73 GPa. These results show that the hardness value of the quaternary alloy drastically increases as the composition of As was increased by 0.01 atomic fraction and when the phosphorous concentration decreases from 0.4 to 0.38. The reason may be that the increase in As concentration hardens the lattice when phosphorous concentration was less and hardness decreases when phosphorous was increased.  相似文献   
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