Laser processing integrated into machine tools — design,applications, economy

In the last few years, lasers have found new applications in production engineering as tools for surface treatment, cutting, welding, drilling and marking. So far, the laser has mainly been used in special laser processing machines (laser-only) directly integrated into a production line or serving as stand-alone stations in the workshop. By combining conventional metal cutting technologies with laser processes in one machine, complete processing of a workpiece with different technologies in one setting can be realized. The main advantages are a reduction of the material flow between the production machines, which leads to a reduction in processing time and logistics, and an enhancement of manufacturing quality due to the processing in one setting. In addition to this approach, new processing technologies such as laser-assisted machining are possible.Applications of laser caving, hardening, welding and drilling of production parts in combination with the cutting process in one setting have been investigated with the aim of adapting these technologies to the characteristics of the machines and the typical parts spectra. Furthermore, various technical solutions for the integration of lasers into milling centres and lathes have been elaborated. In both situations the laser tool is handled like a standard tool and can be exchanged automatically. The main results will be reported, together with a brief discussion of the economic aspects of laser processing integrated into machine tools.This article is based on an invited paper presented at LANE '94, Erlangen, 12–14 October 1994.     

Weak decays of heavy mesons in the instantaneous Bethe Salpeter approach

In the framework of the instantaneous Bethe Salpeter equation we investigate weak decays ofB andD mesons. Mesons are described asq $\bar q$ states interacting via a mixture of a scalar and a vector confining kernel and a one gluon exchange. The model parameters are fixed by a fit to the meson mass spectrum including also the light mesons. We calculate form factors and compare our results to the pole dominance hypothesis. From a fit to ARGUS and CLEO data onB→D ^*?v semileptonic decay we extract the Cabbibo Kobayashi Maskawa matrix element to beV _cb =(0.032 ± 0.003)(1.49ps/τ _b )^1/2 The Isgur Wise function is calculated utilizing the heavy quark mass limit. Finally, we give some results on nonleptonic decays.     

On the interpretation of positron-annihilation data in powders and fine-grained materials

Monte-Carlo simulations of positron diffusion are carried out for powders consisting of spherical and ellipsoidal particles with and without defects. Following Bergersen et al. [1], elastic positron-phonon interaction is considered to be dominant for scattering processes in positron diffusion. The central question is which fraction of the positrons would be able to reach the particle boundaries. Hence, we calculate the Fraction of Positrons reaching particle Surface (FPS). The presence of defects in the particles can drastically reduce FPS depending on the defect concentration and capture rate. We demonstrate that for small-grained materials the grain surface can influence the lifetime signal significantly.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Hot atom chemistry of mixed cristals 35 years of research

A historical survey of the author's contribution to the progress of solid state hot atom chemistry including more personal commentaries is presented.Presented at the International Seminar on the Chemistry of High Energy Atoms, Tokyo Institute of Technology, Ookayama, Meguro-ko, Tokyo 152, Japan, October 28–30, 1992, organised by T. MATSUURA, Institute for Atomic Energy, Rikkyo University, Nagasaka, Yokosuka 240-01, co-editor of the Handbook of Hot Atom Chemistry. I thank Professor MATSUURA for the permission to publish my contribution to the seminar slightly modified compared with the version submitted in the seminar proceedings.     

AES-depth-profiling of thin annealed Pt-films on Si(100)

Thin PtSi films can be grown by evaporating Pt on Si(100) at RT and subsequent annealing of the system at 600–700 K. Contaminants like oxygen are known to have a strong influence on this reaction. In the present study we concentrate on the effect of oxygen partial pressure during the annealing on the silicide growth process. Under proper vacuum conditions annealing at 500 K leads to a homogeneous Pt₂Si film which reacts around 600 K completely to PtSi. A substantial oxygen partial pressure ( 0.1 mbar) in contrast results in an incomplete reaction in the same temperature range: unreacted platinum remains at the surface separated from the silicide by an oxygen enriched layer.Presented at the Seminar on Secondary Electrons in Electron Spectroscopy, Microscopy, and Microanalysis, Chlum (The Czech Republic), 21–24 September, 1993.This work was supported by Deutsche Forschungsgemeinschaft (DFG) through Sonderforschungsbereich 292.We thank Dr. W. Platz (Deutsche Aerospace AG, Ottobrunn) for providing us with Pt evaporated Si-wafers and Th. Hierl (Lehrstuhl für Angewandte Physik, University of Erlangen-Nürnberg), who performed the RBS measurements for AES calibration.