Localization transition of <Emphasis Type="Italic">d</Emphasis>-friendly walkers

 Friendly walkers is a stochastic model obtained from independent one-dimensional simple random walks {S ^k _j } _j≥0 , k=1,2,…,d by introducing ``non-crossing condition': and ``reward for collisions' characterized by parameters . Here, the reward for collisions is described as follows. If, at a given time n, a site in ℤ is occupied by exactly m≥2 walkers, then the site increases the probabilistic weight for the walkers by multiplicative factor exp (β _m )≥1. We study the localization transition of this model in terms of the positivity of the free energy and describe the location and the shape of the critical surface in the (d−1)-dimensional space for the parameters . Received: 13 June 2002 / Revised version: 24 August 2002 Published online: 28 March 2003 Mathematics Subject Classification (2000): 82B41, 82B26, 82D60, 60G50 Key words or phrases: Random walks – Random surfaces – Lattice animals – Phase transitions – Polymers – Random walks     

Nanoparticles in Emissions and Atmospheric Environment: Now and Future

Journal of Nanoparticle Research -     

Nanometric summation architecture based on optical near-field interaction between quantum dots

A nanoscale data summation architecture is proposed and experimentally demonstrated based on the optical near-field interaction between quantum dots. Based on local electromagnetic interactions between a few nanometric elements via optical near fields, we can combine multiple excitations at a certain quantum dot, which allows construction of a summation architecture. Summation plays a key role for content-addressable memory, which is one of the most important functions in optical networks.     

Asymptotic behavior of M-estimator and related random field for diffusion process

The M-estimate which maximizes a positive stochastic process Q is treated for multidimensional diffusion models. The convergence in distribution of the process of ratio of Q's after normalizing is proved. The asymptotic behavior of M-estimates is stated. We present the asymptotic variance in general cases and in estimation by misspecified models.     

Quasi likelihood analysis of volatility and nondegeneracy of statistical random field

We construct a quasi likelihood analysis for diffusions under the high-frequency sampling over a finite time interval. For this, we prove a polynomial type large deviation inequality for the quasi likelihood random field. Then it becomes crucial to prove nondegeneracy of a key index _χ0${\chi }_0$. By nature of the sampling setting, _χ0${\chi }_0$ is random. This makes it difficult to apply a naïve sufficient condition, and requires a new machinery. In order to establish a quasi likelihood analysis, we need quantitative estimate of the nondegeneracy of _χ0${\chi }_0$. The existence of a nondegenerate local section of a certain tensor bundle associated with the statistical random field solves this problem.     

Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors

We report characterization of ZnO thin-film transistors (TFTs) on glass substrates fabricated by pulsed laser deposition (PLD). ZnO films were characterized by X-ray diffraction (XRD), atomic force microscopy and Hall effect measurements. The XRD results showed high c-axis-oriented ZnO(0002) diffraction corresponding to the wurtzite phase. Moreover, the crystallization and the electrical properties of ZnO thin films grown at room temperature are controllable by PLD growth conditions such as oxygen gas pressure. The ZnO films are very smooth, with a root-mean-square roughness of 1 nm. From the Hall effect measurements, we have succeeded in fabricating ZnO films on glass substrates with an electron mobility of 21.7 cm²/V s. By using the ZnO thin film grown by two-step PLD and a HfO₂ high-k gate insulator, a transconductance of 24.1 mS/mm, a drain current on/off ratio of 4.4×10⁶ and a subthreshold gate swing of 0.26 V/decade were obtained for the ZnO TFT.     

Conical spin-spiral state in an ultrathin film driven by higher-order spin interactions

We report a transverse conical spin spiral as the magnetic ground state of a double-layer Mn on a W(110) surface. Using spin-polarized scanning tunneling microscopy, we find a long-range modulation along the [001] direction with a periodicity of 2.4 nm coexisting with a local row-wise antiferromagnetic contrast. First-principles calculations reveal a transverse conical spin-spiral ground state of this system which explains the observed magnetic contrast. The canting of the spins is induced by higher-order exchange interactions, while the spiraling along the [001] direction is due to frustrated Heisenberg exchange and Dzyaloshinskii-Moriya interaction.