The Polymerization of 1,3-Dioxolane Catalyzed by Ion Exchange Resin (Polystyrene Sulfonic Acid)

Polystyrene sulfonic acid resin (Amberlyst 15) was found to initiate the cationic polymerization of 1,3-dioxolane easily in bulk at 0 to 50° C, and polymers with a reduced viscosity of 0.1 were obtained. However, this resin showed only low initiator activity for the polymerizations of 2-methyl-1, 3-dioxolane and trioxane.     

Quinone-recognition by Four-point Hydrogen Bonding in Porphyrin System Having Urea Moiety

5,15- cis -bis(Ureidophenyl)porphyrins have significant recognizing ability for p -benzoquinones through four-point hydrogen bonding. Although an unusual temperature-dependence of the complexation is observed with bis( N '-phenylureidophenyl) porphyrin, bis( N '-ethylureidophenyl)porphyrin shows a satisfactorily linear van't Hoff plot and recognizes an electron-rich p -benzoquinone such as tetramethyl- p -benzoquinone more effectively, which is ascribed to the large enthalpy change in the complex.     

Polymer-Supported Bases. 10. Synthesis of Phosphatidylcholines Using Polymer-Supported or Free Acylimidazoles

Dipalmitoylphosphatidylcholine was synthesized in a good yield by the reaction of L-α-glycerophosphorylcholine with 1-palmitoylimidazole in the presence of DBU. Polymer-supported 1-palmitoylimidazole moiety also could be used as the acylating reagent, though the yield of the choline was moderate.     

Generation of 3-Carbanion Species from 3-Phenylsulfinyl- and 3-Phenylsulfonyl Propionic Acids

During the course of studies on butenolide synthesis¹ we have investigated the utilities of 3-sulfur-functionalized propionic acid derivatives. We report the results with 3-carbanion species obtained from 3-phenylsulfiny1- and 3-phenylsulfonylpropionic acids (1) and (2). These compounds were easily prepared from 3-phenylthiopropionic acid.     

Tamper resistance in optical excitation transfer based on optical near-field interactions

We present tamper resistance in optical excitation transfer via optical near-field interactions based on the energy dissipation process occurring locally in nanometric devices such as quantum dots. A theoretical comparison with electrical systems is also shown, focusing on the required environmental conditions. Numerical simulations based on virtual photon models demonstrate high tamper resistance.     

VLS Growth of ITO Whiskers Prepared by the Electron Shower Method

Indium tin oxide (ITO) whiskers were grown by VLS (vapour-liquid-solid) mechanism, using the electron shower method. The whiskers were grown above 200 °C, and the deposition rate was above 0.6 nm/s. The electron shower controlled the size of the whiskers, and the size was 30 nm in diameter and 600 nm in length. The whiskers grew along the substrate at t < 300 s, but grew in a direction perpendicular to the substrate at t > 300 s. When the ITO whiskers grown along the substrate were used as NO₂ gas sensor, the sensitivity was 340, and about 300 times higher than those of the whiskers grown in a direction perpendicular to the substrate and plate-like ITO crystallites.