ZnCl2-mediated stereoselective addition of terminal alkynes to D-(+)-mannofuranosyl nitrones

[reaction: see text] An optimized process for the addition of terminal alkynes to chiral nitrones using ZnCl2 and NEt3 in toluene is reported. The new reaction protocol is facile to perform and cost-effective. The resulting optically active propargyl N-hydroxylamines are isolated in good to excellent yield and high diastereoselectivity.     

Synthesis and electronic properties of series of oligothiophene-[1,10]phenanthrolines

Organic semiconductors containing metal binding sites within their molecular backbones are of a general interest in organic materials chemistry. In this paper, we describe a straightforward synthetic procedure, which gives access to a series of 2-(oligothienyl)-[1,10]phenanthrolines (nT-phen), 2,9-bis(oligothienyl)-[1,10]phenanthrolines (nT-phen-nT) and 2,2'-(oligothienyl)bis-[1,10]phenanthrolines (phen-nT-phen). By a Negishi-type cross coupling of 2-iodo-[1,10]phenanthroline or 2,9-diiodo-[1,10]phenanthroline with in situ generated alpha-zinc derivatives of different mono-, ter-, and quinquethiophenes we were able to synthesize the corresponding oligothienyl-phenanthrolines in medium to excellent yields. Furthermore, characterization of the optical properties of the new materials indicated that the two subunits, oligothiophene and phenanthroline, are in pi-conjugation. Characterization of the redox properties revealed additional evidence for the role of [1,10]phenanthroline as a pi-bridging unit in the nT-phen-nT series.     

Evidence for line nodes in the superconducting energy gap of noncentrosymmetric CePt3Si from magnetic penetration depth measurements

We report measurements of the magnetic penetration depth lambda(T) in high-quality CePt3Si samples down to 0.049 K. We observe a linear temperature dependence below T approximately equal to 0.16Tc, which is interpreted as evidence for line nodes in the energy gap of the low-temperature phase of this material. A kink in lambda(T) at about 0.53 K may be associated with the second superconducting transition recently reported. The results are discussed in terms of the symmetry of the superconducting order parameter.     

Polarization of valence band holes in the (Ga,Mn)as diluted magnetic semiconductor

We report on direct measurements of the impurity band hole polarization in the diluted magnetic semiconductor (Ga,Mn)As. The polarization of impurity band holes in a magnetic field is strongly enhanced by antiferromagnetic exchange interaction with Mn ions. The temperature dependence of the hole polarization shows a strong increase of this polarization below the Curie temperature. We show that the ground state of the impurity band is formed by uniaxial stress split F=+/-1 states of antiferromagnetically coupled Mn ions (S=5/2) and valence band holes (J=3/2). The gap between the Mn acceptor related impurity band and the valence band is directly measured in a wide range of Mn content.     

Hydrogen-bond topology and the ice VII/VIII and ice Ih/XI proton-ordering phase transitions

The existence of an ice Ih/XI proton-ordering transition to a low-temperature ferroelectric phase has sparked considerable debate in the literature. Electronic density functional theory calculations, extended using graph invariants, confirm that a transition to a low-temperature ferroelectric phase should occur. The predicted transition at 98 K is in qualitative agreement with the observed transition at 72 K, and the low-temperature phase is the ferroelectric phase determined in diffraction experiments. The theoretical methods used to predict the phase transition are validated by comparing their prediction to the well-characterized ice VII/VIII proton-ordering transition.     

Influence of the dynamic ergodic divertor on the density limit in TEXTOR

A significant influence of the dynamic ergodic divertor (DED) on the density limit in TEXTOR has been found. In Ohmic discharges, where without DED detachment normally arises at the density limit, a MARFE (multifaceted asymmetric radiation from the edge) develops when the DED is operated in a static regime. The threshold of the MARFE onset in the neutral beam heated plasmas is increased by applying 1 kHz ac DED at the high-field side. The theoretical predictions based on the parallel energy balance taking poloidal asymmetries into account agree well with the experimental observation.     

Neutral-pion photoproduction off protons in the energy range 0.3 GeV<E(gamma)<3 GeV

Single pi(0) photoproduction has been studied with the CB-ELSA experiment at Bonn using tagged photon energies between 0.3 and 3.0 GeV. The experimental setup covers a very large solid angle of approximately 98% of 4pi. Differential cross sections dsigma/dOmega have been measured. Complicated structures in the angular distributions indicate a variety of different resonances being produced in the s channel intermediate state gammap-->N(*)(Delta(*))-->ppi(0). A combined analysis including the data presented in this letter along with other data sets reveals contributions from known resonances and evidence for a new resonance N(2070)D15.     

Monolithic carrier-envelope phase-stabilization scheme

A new scheme for stabilizing the carrier-envelope (CE) phase of a few-cycle laser pulse train is demonstrated. Self-phase modulation and difference-frequency generation in a single periodically poled lithium niobate crystal that transmits the main laser beam allows CE phase locking directly in the usable output. The monolithic scheme obviates the need for splitting off a fraction of the laser output for CE phase control, coupling into microstructured fiber, and separation and recombination of spectral components. As a consequence, the output yields 6-fs, 800-nm pulses with an unprecedented degree of short- and long-term reproducibility of the electric field waveform.     

Ultrabroadband beam splitter with matched group-delay dispersion

We present a general design strategy for a broadband thin-film beam splitter with matched group-delay dispersion. By taking the substrate dispersion into account in the coating design, any combination of input and output can show the same dispersion for transmission and reflection. As a specific implementation, an ultrabroadband 50:50 beam splitter from 600 to 1500 nm for femtosecond laser applications was designed, fabricated, and characterized.