Density of states and charge distribution in hydrogenated amorphous silicon

The local density of states and the charge distribution in a cluster model of hydrogenated amorphous silicon is calculated using the recursion method. The results indicate an average charge transfer of 0.3 electrons from silicon to hydrogen. In addition Si-H dipoles carry small negative charges, which are neutralized by a positively charged bulk of silicon atoms. There are also static spatial charge fluctuations, which are due to the topological disorder.     

Ultrasonics in food processing

In recent years, the physical and chemical effects of ultrasound in liquid and solid media have been extensively used in food processing applications. Harnessing the physical forces generated by ultrasound, in the absence and presence of cavitation, for specific food processing applications such as emulsification, filtration, tenderisation and functionality modification have been highlighted. While some applications, such as filtration and emulsification are "mature" industrial processes, other applications, such as functionality modification, are still in their early stages of development. However, various investigations discussed suggest that ultrasonic processing of food and dairy ingredients is a potential and viable technology that will be used by many food industries in the near future.     

New precision limit on the strange vector form factors of the proton

The parity-violating cross-section asymmetry in the elastic scattering of polarized electrons from unpolarized protons has been measured at a four-momentum transfer squared Q2 = 0.624 GeV2 and beam energy E(b) = 3.48 GeV to be A(PV) = -23.80 ± 0.78(stat) ± 0.36(syst) parts per million. This result is consistent with zero contribution of strange quarks to the combination of electric and magnetic form factors G(E)(s) + 0.517G(M)(s) = 0.003 ± 0.010(stat) ± 0.004(syst) ± 0.009(ff), where the third error is due to the limits of precision on the electromagnetic form factors and radiative corrections. With this measurement, the world data on strange contributions to nucleon form factors are seen to be consistent with zero and not more than a few percent of the proton form factors.     

Automated and rapid online determination of 15N abundance and concentration of ammonium, nitrite, or nitrate in aqueous samples by the SPINMAS technique

On the basis of the principle of reaction continuous-flow quadrupole mass spectrometry, an automated sample preparation unit for inorganic nitrogen (SPIN) species was developed and coupled to a quadrupole Mass Spectrometer (MAS). The SPINMAS technique was designed for an automated, sensitive, and rapid determination of 15N abundance and concentration of a wide variety of N-species involved in nitrogen cycling (e.g. NH4+, NO3-, NH2OH etc.). In this paper, the SPINMAS technique is evaluated with regard to the determination of 15N abundance and concentration of the most fundamental inorganic nitrogen compounds in ecosystems such as NH4+, NO2-, and NO3-. The presented paper describes the newly developed system in detail and demonstrates the general applicability of the system. For a precise determination of 15N abundance and concentration, a minimum total N-amount of 10 microg NH4+ - N, 0.03 microg NO2- - N, or 0.3 microg NO3- - N has to be supplied. Currently, the SPINMAS technique represents the most rapid and only fully automated all-round method for a simultaneous determination of 15N abundance and total N-amount of NH4+, NO2-, or NO3- in aqueous samples.     

Threshold photoemission spectroscopy in solids

Threshold photoemission spectroscopy (TPES) is used to measure the Fe 2p spectrum of a stainless steel sample. The obtained spectrum is compared with analogous spectra measured by X-ray photoemission and absorption spectroscopies. The results of this comparison suggest that resonant two-electron autoionization processes, rather than direct photoemission from the core level, are the main mechanisms contributing to the signal. Limits and applicability of this experimental approach to investigate bulk electronic properties in solids are discussed.     

Environmental noise – ‘Forgotten’ or ‘Ignored’ pollutant?

It has been 20 years since the European Commission adopted the Green Paper on Future Noise Policy in 1996, taking the first comprehensive step towards the development of an EU-wide noise policy. This document envisioned a directive that would harmonise methods for the assessment of environmental noise and the dissemination of information to the public. This led to the establishment of Directive 2002/49/EC in 2002 also known as the Environmental Noise Directive (END). The END called for the development of strategic noise maps and action plans across every EU Member State in five year intervals. Two phases of noise mapping and action planning have now been completed and Member States are about to embark on the third phase of noise mapping, due in 2017. Focussing on results reported to the European Commission, this study summarises the current state of noise mapping, 20 years after the publication of the Green Paper, and identifies critical needs for future noise mapping phases.     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier.     

Operation of a Raman laser in bulk silicon

A Raman laser based on a bulk silicon single crystal with 1.127 μm emission wavelength is demonstrated. The Si crystal with 30 mm length was placed into an external cavity and pumped by a Q-switched Nd:YAG master oscillator power amplifier system. Strong defocusing of the pump and Raman laser beam by free carriers was compensated by an intracavity lens. Raman laser operation with a pulse duration of 2.5 ns was identified by a Raman laser threshold significantly lower than the single-pass stimulated Raman-scattering threshold. Linear absorption losses of the 1.06415 μm pump radiation are strongly reduced by cooling the Si crystal to a temperature of 10 K.