Growth and properties of YAlO film synthesized by RF magnetron sputtering

YAlO films are synthesized on (1 0 0)-oriented Si substrates by RF magnetron sputtering method. Al₂O₃ wafer is used as a target material, and some small pieces of Y bulk material are put on the Al₂O₃ target to synthesize YAlO films. Y composition ratio is varied from 0 to 34%. Amorphous YAlO films are characterized. An electrical resistivity as high as 3.4 × 10¹⁴ Ω-cm is achieved for the YAlO film with Y composition ratio of 10%. The dielectric constant increases with increasing Y composition ratio, and the YAlO film with Y composition ratio of 34% has a dielectric constant of 10.2. The bandgap energy of the YAlO film is suggested to be wider than 6.5 eV. YAlO films with a surface roughness of 0.4-1.3 nm are obtained irrespective of the Y composition ratio.     

Co-induced nano-structures on Si(1 1 1) surface

The interaction of cobalt atoms with silicon (1 1 1) surface has been investigated by means of scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Besides the Co silicide islands, we have successfully distinguished two inequivalent Co-induced reconstructions on Si(1 1 1) surface. Our high-resolution STM images provide some structural properties of the two different derived phases. Both of the two phases seem to form islands with single domain. The new findings will help us to understand the early stage of Co silicide formations.     

Control of light pulse propagation with only a few cold atoms in a high-finesse microcavity

Propagation of a light pulse through a high-Q optical microcavity containing a few cold atoms (N<10) in its cavity mode is investigated experimentally. With less than ten cold rubidium atoms launched into an optical microcavity, up to 170 ns propagation lead time ("superluminal"), and 440 ns propagation delay time (subluminal) are observed. Comparison of the experimental data with numerical simulations as well as future experiments are discussed.     

Magnetic structure,phase diagram,and a new type of spin-flop transition dominated by higher order interaction in a localized 5f system U3Pd20Si6

The magnetic structure of the localized-5f uranium intermetallic compound U3Pd20Si6 has been determined by means of a neutron diffraction experiment. Our data demonstrate that this compound has a collinear coupling of the sublattice ordering of the uranium spins on the 4a and 8c sites. We conclude that higher-order exchange and/or quadrupole interactions are necessary to stabilize this unique collinear structure. We discovered a new type of spin-flop transition against the uniaxial anisotropy induced by this collinear coupling.     

Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy

Thermal stability of sputter deposited ZnO thin films was evaluated by thermal desorption spectroscopy (TDS). Desorption of Zn was mainly observed from the films deposited at low O₂/Ar gas ratio and low RF power. In contrast, O₂ desorption was mainly observed from the films deposited at high O₂/Ar gas ratio and high RF power. The amount of desorbed O₂ from the film increased with increasing the O₂/Ar gas flow ratio and the RF power. Furthermore, the desorption temperature of O₂ increased with increasing the RF power during the deposition. Thermal stability of the ZnO films was controlled not only by the O₂/Ar gas flow ratio, but also applied RF power to the target.     

Characterization of Si-added aluminum oxide (AlSiO) films for power devices

Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C-V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C-V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure.     

Crystal structures of calcium IV and V under high pressure

High-pressure phases IV and V of calcium discovered in 2005 have the highest superconducting transition temperature of 25 K among all the elements; however, their crystal structures have not been determined. From the x-ray powder diffraction data, both Ca IV and V have been found to form unique and complex structures with a coordination number of 7. They were confirmed to be identical to the theoretical models that were recently predicted [Ishikawa, Phys. Rev. B 77 020101(R) (2008)].     

Crystallization behavior and origin of c-axis orientation in sol–gel-derived ZnO:Li thin films on glass substrates

Preferentially, c-axis-oriented lithium-doped zinc oxide (ZnO:Li) thin films were prepared on Pyrex borosilicate glass substrates by a sol–gel method starting from zinc acetate dihydrate, lithium chloride, 2-methoxyethanol and monoethanolamine. Decomposition and crystallization behavior of dip-coated amorphous precursor films during post-annealing treatments were investigated by thermogravimetry–differential thermal analysis (TG–DTA), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), optical transmittance measurements, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). It was revealed that the films contained the organic compounds at temperatures up to 300°C, which was the key to the transformation from the amorphous to the crystalline state. Thermodynamical consideration of nucleation and crystal growth was made taking account of surface energies of the film and the glass substrate and an interfacial energy between them. Mechanisms underlying the c-axis orientation were proposed based upon the initial orientation due to nucleation and final growth orientation.     

Simultaneous irradiation of ultrasound and UV light. Ultrasonic acceleration of the photochemical disappearance of 4,4'-dihalogenated benzils in 1,4-dioxane

Irradiation of ultrasound accelerated the rate of the photochemical disappearance of 4,4'-dihalogenated benzils in 1,4-dioxane in the order of halogen = I, Br > Cl > F. 4,4'-dimethoxy and unsubstituted benzils did not show acceleration. Possible mechanisms of the acceleration are discussed.