A study of density in electron-cyclotron-resonance plasma

A theory is developed for the density profile of low temperature plasmas confined by applied magnetic field and an experiment of the electron-cyclotron-resonance (ECR) plasma is conducted to compare the theoretical prediction and experimental measurements. Due to a large electron mobility along the magnetic field, electrons move quickly out of the system, leaving ions behind and building a space charge potential, which leads to the ambipolar diffusion of ions. In a steady-state condition, the plasma generation by ionization of neutral molecules is in balance with plasma loss due to the diffusion, leading to the electron temperature equation, which is expressed in terms of the plasma size, chamber pressure, and the ionization energy and cross section of neutrals. The power balance condition leads to the plasma density equation, which is also expressed in terms of the electron temperature, the input microwave power and the chamber pressure. It is shown that the plasma density increases, reaches its peak and decreases, as the chamber pressure increases from a small value (0.1 mTorr). These simple expressions of electron temperature and density provide a scaling law of ECR plasma in terms of system parameters. After carrying out an experimental observation, it is concluded that the theoretical predictions of the electron temperature and plasma density agree remarkably well with experimental data     

On a stochastic nonlinear equation in one-dimensional viscoelasticity

In this paper we discuss an initial-boundary value problem for a stochastic nonlinear equation arising in one-dimensional viscoelasticity. We propose to use a new direct method to obtain a solution. This method is expected to be applicable to a broad class of nonlinear stochastic partial differential equations.

     

Sparse polynomials, redundant bases, gauss periods, and efficient exponentiation of primitive elements for small characteristic finite fields

Gauss periods give an exponentiation algorithm that is fast for many finite fields but slow for many other fields. The current paper presents a different method for construction of elements that yield a fast exponentiation algorithm for finite fields where the Gauss period method is slow or does not work. The basic idea is to use elements of low multiplicative order and search for primitive elements that are binomial or trinomial of these elements. Computational experiments indicate that such primitive elements exist, and it is shown that they can be exponentiated fast.     

Effects of annealing conditions on the electrical properties of Bi4-xNdxTi3O12 (x = 0.46) thin films processed at low temperature

Neodymium-substituted Bi₄Ti₃O₁₂ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as O₂, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization (P_r) of ∼48 μC/cm² with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in O₂ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller P_r than that annealed in oxygen. The difference of P_r of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. PACS 77.55.+f; 77.80.-e; 77.80.Fm; 81.15.-z     

基于模糊集相容性的模糊控制规则优化方法

在简要介绍模糊模型的完备性和相容性的基础上 ,根据模糊集贴近度 ,提出模糊集相容性的概念 ;通过对模糊控制规则表特征的分析 ,进一步完善规则相容性概念及其定量评价方法 ;最后给出模糊控制规则模型自寻优优化方法。仿真结果表明 ,该方法可以大大提高控制系统的控制性能。     

铝互连线的电迁移问题及超深亚微米技术下的挑战

铝互连线的电迁移问题历来是微电子产业的研究热点，其面临的电迁移可靠性挑战也是芯片制造业最持久和最重要的挑战之一.从20世纪90年代开始，超深亚微米(特征尺寸≤0.18 μm)铝互连技术面临了更加复杂的电迁移可靠性问题.从电迁移理论出发，分析概括了铝互连电迁移问题的研究方法，总结了上世纪至今关于铝互连电迁移问题的主要经验；最后结合已知的结论和目前芯片制造业现状，分析了当前超深亚微米铝互连线电迁移可靠性挑战的原因和表现形式，提出了解决这些问题的总方向. 关键词： 电迁移 铝互连 微结构     

用变形全息透镜实现变形分数傅里叶变换

利用一发散点光源和一束倾斜平行光制作出在两个垂直方向上具有不同焦距的变形全息透镜,且用此全息元件实现了变形分数傅里叶变换。变形全息透镜两个方向上的焦距随全息记录条件和再现条件而变化,分析了用这种全息透镜实现变形分数傅里叶变换的条件。实验表明,用该元件能够方便地实现任意级次的变形分数傅里叶变换。