Dehydrogenation of 1-(diphenylphosphinoyl)-2-(N′-phenylhydrazino)ethane and N-butyl-N′-phenylhydrazine

Dehydrogenation of 1-(diphenylphosphinoyl)-2-hydrazino-substituted ethanes and N-butyl-N′-phenylhydrazine to the corresponding hydrazone derivatives is performed. Both reactions were established to involve predominantly, if not exclusively, an azo intermediate.     

Acylation of n-phenyl-2-(indol-3-yl)succinimides

Treatment of N-phenyl-2-(1-R-indol-3-yl)succinimides with acetyl perchlorate leads to acylation of the benzene ring of the indole substituent.L. M. Litvinenko Institute of Physico-Organic and Carbon Chemistry, Ukrainian Academy of Sciences, Donetsk 340114. A. N. Kosygin State Textile Academy, Moscow 117918, GSP-1. Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 1, pp. 85–88, January, 1997.     

Detection and synthesis of a synergist of the sex pheromone of the cotton bollworm

The synergisic properties of docosa-5Z, 17Z-diene — one of the by-products of the synthesis of the synthetic cotton bollworm pheromone — have been revealed.A. S. Sadykov Institute of Bioorganic Chemistry, Academy of Sciences of the Republic of Uzbekistan, Tashkent, fax 627071. Translated from Khimiya Prirodnykh Soedinenii, No. 1, pp. 130–132, January–February, 1994.     

Four-wave mixing reflectivity of silicon at 1.06 μm: Influence of free-carrier absorption

The phase-conjugate reflectivity obtainable by degenerate four-wave mixing in silicon at a 1.06 m is calculated including free-carrier absorption. A maximum reflectivity of more than 100% is possible. The dependence of the reflectivity on the signal and pump energy densities up to 70 mJ/cm² is measured and found to agree with theory. The wave-front-correction property of DFWM is demonstrated with a lens in the signal beam.     

Dynamic absorption effects in KrF* amplifiers

The results of transient loss measurements performed in a self-sustained discharge KrF^* amplifier are reported. Analysis of these results gives a minimum value of 20 for the effective gain to loss ratiog ₀/_eff, indicating that efficient extraction of energy in subpicosecond KrF^* amplifiers in the 1 J range should be achievable.     

Surface photovoltage measurement in MOS structures

A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E _t ¹ = E_v + 0.25 eV and E _t ² = E_c – 0.30 eV in the oxide-silicon interface of the investigated structures had been found.