冲击波温度和压力对二氧化钛相变的影响

 介绍了一种简便易行的降低疏松固体物质冲击波温度的方法，其要点是用液体石蜡充填样品的空隙。以用粉末锐钛矿压装成型的样品为例，对比了不充填和充填液态石蜡时冲击波作用的结果。在同样的冲击加载条件下（均为钢飞片，撞击速度为3.16 km/s），估算两种样品中达到的压力分别为36.3 GPa和46.8 GPa，平均温度分别约为4.7×10³ ℃和2.0×10³ ℃，即：充填液态石蜡的样品中压力增加了约10 GPa，但平均温度降低了近3×10³ ℃。对冲击后回收样品的分析结果表明，不充填石蜡样品的主要产物为金红石，即冲击波产生的高温起了主要作用。而充填液态石蜡时，主要生成β-TiO₂高压相，即高压起了主要作用。     

利用X射线衍射研究冲击波合成纤锌矿型氮化硼

 用X射线衍射法，对不同结晶度的石墨型氮化硼（gBN）在冲击波作用下转变成的纤锌矿型氮化硼（wBN）产物进行了研究，对wBN中的杂质含量等进行了分析。结果表明：gBN的石墨化指数G.I值对wBN的产率有明显的影响。     

催化光度法测定痕量铁

基于铁对过氧化氢氧化对-氨基二甲基苯胺盐酸盐的催化活性,建立了测定痕量的新方法。灵敏度为1.6×10-11g/mL,测定范围为0～0.50μg Fe/50mL,用于测定几种实物样品中的痕量铁,相对标准偏差0.65～2.6%.     

Growth of suppression in humans based on distortion-product otoacoustic emission measurements

Distortion-product otoacoustic emissions (DPOAEs) were used to describe suppression growth in normal-hearing humans. Data were collected at eight f(2) frequencies ranging from 0.5 to 8 kHz for L(2) levels ranging from 10 to 60 dB sensation level. For each f(2) and L(2) combination, suppression was measured for nine or eleven suppressor frequencies (f(3)) whose levels varied from -20 to 85 dB sound pressure level (SPL). Suppression grew nearly linearly when f(3) ≈ f(2), grew more rapidly for f(3)?< f(2), and grew more slowly for f(3)?> f(2). These results are consistent with physiological and mechanical data from lower animals, as well as previous DPOAE data from humans, although no previous DPOAE study has described suppression growth for as wide a range of frequencies and levels. These trends were evident for all f(2) and L(2) combinations; however, some exceptions were noted. Specifically, suppression growth rate was less steep as a function of f(3) for f(2) frequencies ≤ 1 kHz. Thus, despite the qualitative similarities across frequency, there were quantitative differences related to f(2), suggesting that there may be subtle differences in suppression for frequencies above 1 kHz compared to frequencies below 1 kHz.     

Simulation of island aggregation influenced by substrate temperature, incidence kinetic energy and intensity in pulsed laser deposition

Using kinetic Monte Carlo method, we have simulated a pulsed energetic growth process in pulsed laser deposition. During the growth of film, substrate temperature mainly influences upon film morphology by directly enhancing the adatom mobility through the temperature-dependent thermal vibration. By contrast, the effect of incidence kinetic energy on film growth is complex resulting from the collisions between the incident particles and the adatoms. The results show that improving incident kinetic energy cannot significantly accelerate the migration rate of adatom but change surface microstructure and promote single adatom formation resulting in more island aggregation density. Moreover, since pulse-influx characterizes pulsed laser deposition, the intensity per pulse contributes to the evolvement of nucleation density and the results illustrate that a general scaling law different from ordinary power law still exists in energetic growth of pulsed laser deposition.     

Protocol for multi-party superdense coding by using multi-atom in cavity QED

We present a protocol for multi-party superdense coding by using multi-atom in cavity quantum electrodynamics (QED). It is shown that, with a highly detuned cavity mode and a strong driving field, the protocol is insensitive to both cavity decay and thermal field. It is even certain to identify GHZ states via detecting the atomic states. Therefore we can realize the quantum dense coding in a simple way in the multiparty system.     

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors(MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Ditof the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness(EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy(HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO2 or Al2O3 dielectric layers.     

Intra-cavity second harmonic generation with Nd:YVO4/BIBO laser at 542 nm

We report, for the first time, an efficient intra-cavity second-harmonic generation (SHG) at 1084 nm in a nonlinear optical crystal, BiB₃O₆(BIBO) at the direction of (θ, ?) = (170.1°, 90°), performed with a LD end-pumped cw Nd:YVO₄ laser. With 590 mW diode pump power, a continuous-wave (cw) SHG output power of 19 mW at 542 nm yellow-green color has been obtained using a 1.5 mm-thick BIBO crystal. The optical conversion efficiency was 3.22%. It was found that the output wavelength could be 532 nm, 537 nm or 542 nm according to regulating the angle of BIBO.