Improvement of Biological Effects of Root-Filling Materials for Primary Teeth by Incorporating Sodium Iodide

Therapeutic iodoform (CHI₃) is commonly used as a root-filling material for primary teeth; however, the side effects of iodoform-containing materials, including early root resorption, have been reported. To overcome this problem, a water-soluble iodide (NaI)-incorporated root-filling material was developed. Calcium hydroxide, silicone oil, and NaI were incorporated in different weight proportions (30:30:X), and the resulting material was denoted DX (D5~D30), indicating the NaI content. As a control, iodoform instead of NaI was incorporated at a ratio of 30:30:30, and the material was denoted I30. The physicochemical (flow, film thickness, radiopacity, viscosity, water absorption, solubility, and ion releases) and biological (cytotoxicity, TRAP, ARS, and analysis of osteoclastic markers) properties were determined. The amount of iodine, sodium, and calcium ion releases and the pH were higher in D30 than I30, and the highest level of unknown extracted molecules was detected in I30. In the cell viability test, all groups except 100% D30 showed no cytotoxicity. In the 50% nontoxic extract, D30 showed decreased osteoclast formation compared with I30. In summary, NaI-incorporated materials showed adequate physicochemical properties and low osteoclast formation compared to their iodoform-counterpart. Thus, NaI-incorporated materials may be used as a substitute for iodoform-counterparts in root-filling materials after further (pre)clinical investigation.     

TG-FTIR技术对水氯镁石结晶热解过程的研究

水氯镁石脱水是镁资源利用的关键.其中一种重要的方法是向水氯镁石中添加助剂形成复盐及络合物脱水.通过缓慢冷却水氯镁石及盐酸苯胺的过饱和水溶液制备了水氯镁石-盐酸苯胺结晶物.通过TGDTA-FTIR联用技术分析了盐酸苯胺、水氯镁石以及盐酸苯胺-水氯镁石结晶物的热解过程,定性检测每步分解的逸出气体以推测反应过程.结果显示:盐酸苯胺在400℃以前仅发生物理变化;水氯镁石的热解分阶段进行,205℃以前发生脱去四个结晶水,205℃以后在脱水反应的同时发生水解反应生成HCl;盐酸苯胺-水氯镁石结晶物分阶段脱水、脱盐酸苯胺,整个过程没有水解现象发生,能够得到高纯度无水氯化镁.     

Femtosecond electron pulse compression by using the time focusing technique in ultrafast electron diffraction

We present a new model of an electron gun for generating subrelativistic femtosecond (fs) electron pulses. The basic idea is to utilize a dc acceleration stage combined with a time focusing region, the time focusing electrode generates an electron energy chirp for bunching at the target. Without considering the space charge effects, simulations of the electron gun were carried out under the conditions of different dc voltages and various slopes of the voltage added on the time focusing electrode. Tracing and simulating large numbers of photoelectrons through Monte-Carlo and finite difference methods, the electron pulses with 1 ps can be compressed to 55 fs, which will allow significant advances in the field of ultrafast diagnosis.     

偶氮侧基聚合物光致异构动力学研究

本文对偶氮侧基聚合物相位共轭光时间特性进行了研究,得到了相位共扼光产生机制─光致异构过程的时间常数.在相位共轭光上升阶段,其时间常数在0.4～0.5s之间,在相让共轭光的衰减过程,衰减满足双指数关系,分段拟合得到较好的结果,且得到快过程的时间常数为0.27s,慢过程的时间常数为0.78s.     

羊八井50m2RPC实验及初步测试结果

介绍了羊八井50m²电阻板室(RPC)地毯实验的结构、安装和对其性能的初步测试.测试的结果表明RPC完全能够很好地在海拔4300m,气压594mbar的羊八井宇宙线观测站正常地运行.     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.