排序方式: 共有42条查询结果,搜索用时 15 毫秒
31.
Paul Keys 《The Journal of the Operational Research Society》1991,42(6):435-446
The range of possible ways in which OR influences and is influenced by the organization in which it takes place is great. These influences will be due in part to the nature of the organization involved and such factors cannot be considered in general. However, other factors will have their roots in the generic processes and character found in OR and organizations. A potentially useful way of investigating these factors is to ask what part OR plays in an organization. The particular view held of organizations and of the behaviour of people within them will determine how this aspect of OR is understood. In this paper Morgan's method of organizational analysis based upon the idea of metaphor is adopted to explore the place of OR in organizations. This approach explicitly uses a multi-faceted style of analysis, which is seen to be preferable to one which is more partial in its treatment of organization. 相似文献
32.
33.
34.
Meng H Sun F Goldfinger MB Gao F Londono DJ Marshal WJ Blackman GS Dobbs KD Keys DE 《Journal of the American Chemical Society》2006,128(29):9304-9305
The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This paper presents the design, synthesis, optical and electrochemical characterization, crystal packing, modeling and thin film morphology, and organic thin film field effect transistor (OTFT) device data analysis for a novel 2,6-bis[2-(4-pentylphenyl)vinyl]anthracene (DPPVAnt) organic semiconductor. We observed a hole mobility of up to 1.28 cm2/V.s and on/off current ratios greater than 107 for OTFTs fabricated using DPPVAnt as an active semiconductor layer. The mobility value is comparable to that of the current best p-type semiconductor pentacene-based device performance. In addition, we found a very interesting relationship between the charge mobility and molecule crystal packing in addition to the thin film orientation and morphology of the semiconductor as determined from single-crystal molecule packing study, thin film X-ray diffraction, and AFM measurements. The high performance of the semiconductor ranks among the best performing p-type organic semiconductors reported so far and will be a very good candidate for applications in organic electronic devices. 相似文献
35.
The time-dependent Schrödinger equation is solved numerically for the case of a Gaussian wave packet incident on a time-varying potential barrier. The time evolving reflection and transmission probabilities of the wave packet are computed for several different time-dependent boundary conditions obtained by reducing or increasing the height of the potential barrier. We show that in the case when the barrier height is reduced to zero, a time interval is found during which the reflection probability is larger (superarrivals) compared to the unperturbed case. We further show that the transmission probability exhibits superarrivals when the barrier is raised from zero to a finite value of its height. Superarrivals could be understood by ascribing the features of a real physical field to the Schrödinger wave function which acts as a carrier through which a disturbance, resulting from the boundary condition being perturbed, prpagates from the barrier to the detectors measuring reflected and transmitted probabilities. The speed of propagation of this effect depends upon the rate of reducing or raising the barrier height, thus suggesting an application for secure information transfer using superarrivals. 相似文献
36.
Keys A Brain PT Morrison CA Callender RL Smart BA Wann DA Robertson HE Rankin DW Barron AR 《Dalton transactions (Cambridge, England : 2003)》2008,(3):404-410
The gas-phase structures of AI(Bu')3 and Ga(Bu')3 have been investigated by electron diffraction and are shown to consist of monomeric units with very slightly pyramidal geometries. Salient structural parameters (r(hl)) include r(A1-C) = 2.008(2) A and r(Ga-C) = 2.032(2) A. For both compounds the ligand orientations and geometries are controlled by interligand interactions. The structures of M(Bu(t))3 (M = Al, Ga, In) have been calculated ab initio and those for the aluminium and gallium derivatives are in good agreement with the electron-diffraction structures. Comparison of the ab initio calculated structure of In(Bu')3 with those of Al(Bu(t))3 and Ga(Bu(t))3 suggests that the significantly different photochemistry exhibited by the former does not result from structural factors. In fact the compounds undergo a charge-transfer process in the UV region, with the wavelength required calculated to be slightly longer for the indium compound than for the other two. 相似文献
37.
38.
Zhang Z Keys AS Chen T Glotzer SC 《Langmuir : the ACS journal of surfaces and colloids》2005,21(25):11547-11551
Fabrication of diamond structures by self-assembly is a fundamental challenge in making three-dimensional photonic crystals. We simulate a system of model hard particles with attractive patches and show that they can self-assemble into a diamond structure from an initially disordered state. We quantify the extent to which the formation of the diamond structure can be facilitated by "seeding" the system with small diamond crystallites or by introducing a rotation interaction to mimic a carbon-carbon antibonding interaction. Our results suggest patchy particles may serve as colloidal "atoms" and "molecules" for the bottom-up self-assembly of three-dimensional crystals. 相似文献
39.
40.