Potential acting on the trapped electron

If the absorption of a trapped electron can be shown to correspond to bound—free transitions, it should be possible to calculate the potential acting on the trapped electron inversely from its absorption spectrum. In this paper we present the method of calculating the potential acting on a trapped electron from the observed absorption spectrum.     

Radical alkenylation of alpha-halo carbonyl compounds with alkenylindiums

Alkenylation reaction of alpha-halo carbonyl compounds with alkenylindiums proceeded via a radical process in the presence of triethylborane. Unactivated alkene moieties as well as a styryl group could be introduced by this method. The geometry of the carbon-carbon double bonds of the alkenylindiums was retained. Preparation of an alkenylindium via a hydroindation of 1-alkyne followed by radical alkenylation established an efficient one-pot strategy. [reaction: see text]     

Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4

We have grown InN films on nearly lattice-matched (Mn,Zn)Fe₂O₄ (111) substrates at low temperatures by pulsed laser deposition (PLD) and investigated their structural properties. InN films grown at substrate temperatures above 400 °C show poor crystallinity, and their in-plane epitaxial relationship is [10-10]InN//[11-2](Mn,Zn)Fe₂O₄, which means that their lattice mismatch is quite large (11%). By contrast, high quality InN films with flat surfaces can be grown at growth temperatures lower than 150 °C with the ideal in-plane epitaxial relationship of [11-20]InN//[11-2](Mn,Zn)Fe₂O₄, which produces lattice mismatches of as low as 2.0%. X-ray reflectivity measurements have revealed that the thickness of the interfacial layer between the InN and the substrates is reduced from 14 to 8.4 nm when the growth temperature is decreased from 400 °C to room temperature. This suppression of the interface reactions by reducing the growth temperature is probably responsible for the improvement in crystalline quality. These results indicate that the use of (Mn,Zn)Fe₂O₄ (111) substrates at low growth temperatures allows us to achieve nearly lattice matched epitaxial growth of InN.     

Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers

We investigated the effect of GaNAs strain-compensating layers (SCLs) on the properties of InAs self-assembled quantum dots (QDs) grown on GaAs (0 0 1) substrates. The GaNAs material can be used as SCL thereby minimizing the net strain, and thus is advantageous for multi-stacking of InAs QDs structures and achieving long wavelength emission. The emission wavelength of InAs QDs can be tuned by changing the nitrogen (N) composition in GaNAs SCLs due to both effects of strain compensation and lowering of potential barrier height. A photoluminescence emission at 77 K was clearly observed for sample with GaN_0.024As_0.976 SCL. Further, we observed an improvement of optical properties of InAs QDs by replacing the more popular GaAs embedding layers with GaNAs SCLs, which is a result of decreasing non-radiative defects owing to minimizing the total net strain.     

Study of the vi13/2-1 band in 189Pt

High-spin levels of 189Pt have been studied with the in-beam γ-spectroscopy method via the 176Yb(18O,5n) reaction at the beam energies of 88 and 95 MeV. The previously known vi13/2-1 band has been confirmed, and its unfavored signature branch extended up to the 31/2+ state. Within the framework of the triaxial particle-rotor model, the vi13/2-1 band is suggested to be associated with the 11/2[615] configuration, and to have triaxial deformation.     

179Au的1/2[660](πi13/2)转动带

利用能量为164—180MeV的³⁵Cl束流,通过重离子核反应¹⁴⁹Sm(³⁵Cl,5n)研究了¹⁷⁹Au的高自旋态能级结构.实验进行了γ射线的激发函数、X-γ和γ-γ-t符合测量.基于对实验测量结果的分析,首次建立了¹⁷⁹Au的1/2[660](πi_13/2)转动带.结合已有的实验数据,着重讨论了奇AAu核中1/2[660](πi_13/2)转动带的带头激发能随中子数的变化