Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

西北太平洋海浪数值模拟

以QSCAT／NCEP全年的风场资料为驱动风场,用第三代深海波浪模型WAVEWATCH Ⅲ（WW3）建立波浪后报数值模式,进行西北太平洋海域波浪的数值模拟,旨在得到比传统的波浪统计方法更为精确的时空网格上长时序的波浪场,以便做出更可靠的波浪要素的统计分析．经对比QSCAT／NCEP风场资料与船测的风速资料、水下地形资料（由上海海图出版社出版的最新海图经数字化转化而成）和海浪有效波高计算值与船舶实测值（相关系数在0．9以上）,从三个方面验证了计算结果的精确性．此外,建立了集分析数据和图像输出一体化的后处理系统．根据计算所得的西北太平洋全年的波浪要素值,对此海域的全年海浪的时间和空间分布特征进行分析,进行了综合评价．计算结果和统计数据可以直接应用于科学试验、船舶与海洋工程．     

Pecularities of change transfer mechanism and dielectric properties of glasses Ag-Sb-S-I

Temperature dependence of electronic and ionic components of electric conductivity and dielectric permittivity of amorphic compounds Ag_0.25Sb_0.25S_0.5, (AgSbS₂)_0.95· (SbSI)_0.05 and (AgSbS₂)_0.9·(SbSI)_0.1 in the temperature range of 290–380 K have been investigated. The experimental data show that glasses investigated are solid electrolytes. Ionic conductivity as well as dielectric permittivity of the glasses Ag-Sb-S may be changed by introduction of SbSI.     

机车轮对轴颈高精度动态检测技术的研究

通过对线阵CCD成像系统的研究,提出了机车轮对轴颈磨损的CCD成像拼接动态检测方法,分析了该方法的可行性.讨论了斜光束照射、背景光强变化等因素,这些因素降低了系统的测量精度.最后通过实验系统证明了该方法的可靠性.     

热耦合型二级高频脉冲管制冷机实验研究

降低制冷温度至4 K温区是高频脉冲管制冷机的最新发展要求。本文介绍了一套热耦合型二级高频脉冲管制冷机的性能特性,它可以达到低于15 K以下的最低温度,是目前报道的高频二级脉冲管制冷机能获得的最低温度．通过对制冷机一级预冷、二级输入功率、二级冷量、室温条件等影响的分析,从实验角度揭示了该二级制冷系统的复杂影响,为进一步的深入分析和改进提供了基础。     

动叶顶部间隙对1+1/2对转涡轮性能的影响

本文对1+1／2对转涡轮中动叶顶部间隙大小对涡轮性能的影响进行了详细的数值模拟。对涡轮总体性能参数、节距平均出口气流角、出口节距平均相对马赫数以及不同叶高的负荷进行了对照,发现间隙对1+1／2对转涡轮性能影响明显,尤其是当间隙较大时。当低压动叶间隙宽度达到高压动叶前缘叶高的4．5％时,低压动叶间隙中流动普遍超音,在设计1+1／2对转涡轮时需要加以重点考虑。     

水雾化制备Fe74Al4Sn2P10C2B4Si4非晶合金粉末及其磁粉芯性能研究

采用水雾化方法制备Fe7Al4Sn2P10C2B4Si4合金粉末,研究发现该合金具有强的非晶形成能力和高热稳定性,在粉末粒度小于400目时可以形成非晶态合金.采用该非晶粉末制备的磁粉芯在高频下品质因数显著高于MPP粉芯,说明该磁粉芯高频损耗较低.分析表明,非晶合金磁粉芯高频下损耗低的主要原因是电阻率较高.     

Tm3+/Yb3+共掺铋碲酸盐玻璃中的高效蓝色上转换荧光

制备了高折射率Tm3+/Yb3+共掺杂铋碲酸盐玻璃,利用棱镜耦合法测量出玻璃在632.8和1550 nm波长处的折射率分别为2.0365和1.9795. 对玻璃的吸收、荧光和红外透过光谱展开了测试与分析,根据Judd-Ofelt理论对吸收光谱进行拟合,求得Tm3+的振子强度参数Ωt(t=2,4,6)分别为3.90×10-20, 2.03×10-20和9.03×10-21 cm2,并进一步计算了Tm3+在玻璃中各能级跃迁的振子强度、自发辐射跃迁概率、辐射寿命和荧光分支比等光谱参数. 在980 nm激光激发下测得强的蓝色三光子上转换和近红外双光子上转换荧光. 宽的红外透过窗口、高的折射率和强的蓝色上转换荧光表明,Tm3+/Yb3+共掺铋碲酸盐玻璃有希望成为高效的上转换发光和激光材料.     

Low noise gain-clamped L-band erbium-doped fiber amplifier by utilizing fiber Bragg grating

A novel gain-clamped long wavelength band (L-band) erbium-doped fiber amplifier (EDFA) is proposedand experimented by using a fiber Bragg grating (FBG) at the input end of the amplifier. This designprovides a good gain clamping and decreases noise effectively. It uses two sections of erbium-doped fiber(EDF) pumped by a 1480-nm laser diode (LD) for higher efficiency and lower noise figure (NF). The gainis clamped at 23 dB with a variation of 0.5 dB from input signal power of -30 to -8 dBm for 1589 nm andNF below 5 dB is obtained. At the longer wavelength in L-band higher gain is also obtained and the gainis clamped at 16 dB for 1614 nm effectively. Because the FBG injects a portion of backward amplifiedspontaneous emission (ASE) back into the system, the gain enhances 5 dB with inputting small signal.