Synthesis and intramolecular charge-transfer interaction of o-tropyliobiphenyl tetrafluoroborates

A series of o-tropyliobiphenyl tetradfluoroborates

has been synthesized. Evidences are presented to show that

exhibit strong intramolecular charge-transfer interaction between tropylium ion and remote aryl ring. The structure of

was determined by single crystal X-ray diffraction study.     

Development of a highly precise ID-ICP-SFMS method for analysis of low concentrations of lead in rice flour reference materials

Microwave digestion and isotope dilution inductively coupled plasma mass spectrometry (ID-ICP-SFMS) has been applied to the determination of Pb in rice flour. In order to achieve highly precise determination of low concentrations of Pb, the digestion blank for Pb was reduced to 0.21 ng g⁻¹ after optimization of the digestion conditions, in which 20 mL analysis solution was obtained after digestion of 0.5 g rice flour. The observed value of Pb in a non-fat milk powder certified reference material (CRM), NIST SRM 1549, was 16.8 ± 0.8 ng g⁻¹ (mean ± expanded uncertainty, k = 2; n = 5), which agreed with the certified value of 19 ± 3 ng g⁻¹ and indicated the effectiveness of the method. Analytical results for Pb in three brown rice flour CRMs, NIST SRM 1568a, NIES CRM 10-a, and NIES CRM 10-b, were 7.32 ± 0.24 ng g⁻¹ (n = 5), 1010 ± 10 ng g⁻¹ (n = 5), and 1250 ± 20 ng g⁻¹ (n = 5), respectively. The concentration of Pb in a candidate white rice flour reference material (RM) sample prepared by the National Metrology Institute of Japan (NMIJ) was observed to be 4.36 ± 0.28 ng g⁻¹ (n = 10 bottles). Figure Digestion blank of Pb was carefully reduced to approximately 0.2 ng g^-1 which permitted the highly precise determination of Pb at low ng g^-1 level in foodstuff samples by ID-SFMS     

The extraction and speciation of arsenic in rice flour by HPLC-ICP-MS

Several solvent mixtures and techniques for the extraction of arsenic (As) species from rice flour samples prior to their analysis by HPLC-ICP-MS were investigated. Microwave-assisted extraction using water at 80 °C for 30 min provided the highest extraction efficiency. Total recoveries of extracted As species were in good agreement with the total As concentrations determined by ICP-MS after microwave-assisted acid digestion of the samples. Arsenite [As(III)], arsenate [As(V)] and dimethylarsinic acid (DMAA) were the main species detected in rice flour samples.     

Symmetric submanifolds associated with irreducible symmetric R-spaces

We construct examples of symmetric submanifolds in Riemannian symmetric spaces of noncompact type and obtain the classification of symmetric submanifolds in irreducible Riemannian symmetric spaces of noncompact type and rank greater than one. This finishes the classification problem of symmetric submanifolds in Riemannian symmetric spaces completely.     

Distribution of cyclic species in network formation: Microscopic theory of branching process in Ag-R-B f−g model

The distribution of cyclic species is explored for an irreversible A_g-R-B_f-g model on the basis of the concept of the “m tree” which was introduced in a preceding report by the authors. On the assumption of equal reactivity, the explicit solution is derived; i.e., for a sufficiently concentrated solution the concentration of cyclicj-mers can be expressed as \(\left[ {R_j } \right] = \left( {k_{Rj} /k_L } \right)\left[ {\left( {f - g} \right)D_B } \right]^j \omega _j /j\) , wherek _Rj andk _L are the rate constants of cyclicj-mer formation and interconnection, respectively, and $$\omega _j = \sum\limits_{k = 0}^{[j/2]} {\left( {_{2k}^j } \right)} \alpha ^k $$ where α=(g ? 1)(f ? g ? 1)/g(f ? g) and [j/2] is the Gauss' symbol. Forg → 1, ω_j → 1, so that the solution reduces to the A-R-B_f?1 case. At a critical point one observes the strong divergence of the chances ∑ φ_j of cyclization.     

Structures and electrical properties of ferroelectric copolymer ultrathin films

Ultrathin films of ferroelectric copolymer vinylidenefluoride and trifluoroethylene, P(VDF-TrFE), were successfully obtained by spin-coating and their nanoscale structures and electrical properties were studied utilizing atomic force microscopy (AFM). We succeeded in obtaining ultrathin copolymer films on graphite whose thickness ranged from 1 nm to several tens of nanometers by controlling concentration of copolymer solutions in methylethylketone. We found that ultrathin films thinner than 4 nm showed layered structures whose layer thickness was about 0.5 nm. On the other hand, films thicker than 4 nm formed typical edge-on lamellar crystal structures. Furthermore, we investigated surface potential distribution and piezoelectric property by AFM-based techniques and discussed interaction between electrical dipoles in the molecular chains and graphite substrate.     

Ultrathin polymer gate buffer layer for air‐stable,low‐voltage,n‐channel organic thin‐film transistors

An ultrathin poly(methyl methacrylate) (PMMA) buffer layer was developed to improve the performance of n‐channel organic thin‐film transistors (OTFTs). The 8 nm‐thick PMMA film, prepared by spin‐coating, provided a very smooth surface and a uniform coverage on SiO₂ surface reproducibly, which was confirmed by X‐ray reflectivity (XR) measurement. Then, we fabricated N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide (PTCDI‐C13) thin‐film transistors with and without this 8 nm‐thick PMMA insulating layer on SiO₂ gate insulators and achieved one‐order increase of field‐effect mobility (up to 0.11 cm²/(Vs) in a vacuum), one‐half decrease of threshold voltage, and reduction of current hysteresis with the PMMA layer. Only TFTs with the PMMA layer displayed n‐channel operation in air and showed field‐effect mobility of 0.10 cm²/(Vs). We consider that electrical characteristics of n‐channel OTFTs were considerably improved because the ultrathin PMMA film could effectively passivate the SiO₂ insulator surface and decrease interfacial electron traps. This result suggests the importance of the ultrathin PMMA layer for controlling the interfacial state at the semiconductor/insulator interface and the device characteristics of OTFTs. Copyright © 2009 John Wiley & Sons, Ltd.