Observation of the effects of radially sheared electric fields on the suppression of turbulent vortex structures and the associated transverse loss in GAMMA 10

Vortexlike turbulent structures in hot-ion mode plasmas with several keV are observed in the case with a radially produced weak shear of electric fields E(r). However, a strong E(r) shear formation due to a high ion-confining potential phi(c) production clears up these vortices together with plasma-confinement improvement and disappearance of both drift-wave and turbulencelike Fourier spectral signals. These findings are based on three-time progress in phi(c) in comparison to phi(c) attained 1992-2002. The significant advance of phi(c) is well extended in line with proposed potential-formation physics scalings.     

63Cu nuclear relaxation in the quantum critical point system CeCu5.9Au0.1

63Cu NQR measurements of the 63Cu T1 are reported for the quantum critical point system CeCu5.9Au0.1 over temperatures ranging from 0.1 up to 4.2 K. Below approximately 1 K the magnetization recovery exhibits a stable, nonexponential decay function which we believe signals the onset of 2D quantum critical fluctuations, as has been noted in the literature. We find T1(-1) is proportional to T0.75 for the region T < 1 K. The observed temperature dependence is in agreement with a phenomenological model of non-Fermi liquid behavior based on the uniform susceptibility but is inconsistent with calculations based on susceptibility peaks identified via neutron scattering experiments.     

The Elliptic Algebra and the Drinfeld Realization of the Elliptic Quantum Group

By using the elliptic analogue of the Drinfeld currents in the elliptic algebra , we construct a L-operator, which satisfies the RLL-relations characterizing the face type elliptic quantum group . For this purpose, we introduce a set of new currents in . As in the N=2 case, we find a structure of as a certain tensor product of and a Heisenberg algebra. In the level-one representation, we give a free field realization of the currents in . Using the coalgebra structure of and the above tensor structure, we derive a free field realization of the -analogue of -intertwining operators. The resultant operators coincide with those of the vertex operators in the -type face model.     

Interaction effects in conductivity of Si inversion layers at intermediate temperatures

We compare the temperature dependence of resistivity rho(T) of Si-metal-oxide-semiconductor field-effect transistors with the recent theory by Zala et al. In this comparison, the effective mass m* and g* factor for mobile electrons have been determined from independent measurements. An anomalous increase of rho with temperature, which has been considered as a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance rho(B(axially)) is only qualitatively consistent with the theory; the lack of quantitative agreement indicates that the magnetoresistance is more sensitive to sample-specific effects than rho(T).     

Qβ measurements of 158, 159Pm , 159, 161Sm , 160-165Eu , 163Gd and 166Tb using a total absorption BGO detector

Q _β values of the neutron-rich isotopes of ^160-165Eu and ¹⁶³Gd were measured for the first time using a total absorption bismuth germanate (BGO) detector, and previously obtained data on ^{158, 159}Pm , ^{159, 161}Sm and ¹⁶⁶Tb were re-analyzed. These radioactive sources were prepared by an on-line mass separator (Tokai-ISOL) following the ²³⁸U (p,f reaction. The deduced Q _β values are the following: 6085(80)keV for ¹⁵⁸Pm , 3805(65)keV for ¹⁵⁹Sm , 5460(140)keV for ¹⁵⁹Pm , 4705(60)keV for ¹⁶⁰Eu , 5065(130)keV for ¹⁶¹Sm , 3705(60)keV for ¹⁶¹Eu , 5575(60)keV for ¹⁶²Eu , 4690(70)keV for ¹⁶³Eu , 3170(70)keV for ¹⁶³Gd , 6430(70)keV for ¹⁶⁴Eu , 5800(120)keV for ¹⁶⁵Eu , and 4695(70)keV for ¹⁶⁶Tb . Moreover, the deduced mass excesses and two-neutron separation energies ( S _2n values) were compared with those of the atomic mass evaluations and theoretical predictions.     

Some vanadium(V) complexes as reagents for the photometric determination of alcohols

Vanadiuin(V) com: with an acidic hydroxy group attached to the metal form the crorrresponding.; with alcohols. These esters show a characteristic absorption at 445–480 that alcoholic hydroxy groups can be determined photometrically. The formation constant of the n-butanol esters of vanadium maltolate and 2-methyl-.S-hydroxyquinolinate Were determined in benzene or benzenechloroform (1:1). Simple methods are determined for the determination of alcohol in the concentration range 10^-1–10^-4M.     

Solving polynomial least squares problems via semidefinite programming relaxations

A polynomial optimization problem whose objective function is represented as a sum of positive and even powers of polynomials, called a polynomial least squares problem, is considered. Methods to transform a polynomial least square problem to polynomial semidefinite programs to reduce degrees of the polynomials are discussed. Computational efficiency of solving the original polynomial least squares problem and the transformed polynomial semidefinite programs is compared. Numerical results on selected polynomial least square problems show better computational performance of a transformed polynomial semidefinite program, especially when degrees of the polynomials are larger.     

Facile Synthesis of Free‐Standing Polymer Brush Films Based on a Colorless Polydopamine Thin Layer

A free‐standing polymer brush film with tailored thicknesses based on a colorless polydopamine (PDA) thin layer is prepared and characterized. The surface‐initiated atom transfer radical polymerization (ATRP) of 2‐hydroxyethyl methacrylate (HEMA) is performed on a PDA layer with thickness of ca. 6 nm, which generated an optically transparent and colorless free‐standing PHEMA brush film (1.5 cm × 1.5 cm). Because the cross‐linked PDA layer is used as the base for the polymer brushes, the reported method does not require cross‐linking the polymer brushes. The free‐standing film thicknesses of ≈16–75 nm are controlled by simply changing the ATRP reaction time. The results show that the free‐standing PHEMA brush film transferred onto a plate exhibits a relatively smooth surface and is stable in any solvent.