On limits in complete semirings

Various special cases of complete semirings are presented in a systematic way. We give new characterizations and a lot of examples.     

The simplified Fermi accelerator in classical and quantum mechanics

We review the simplified classical Fermi acceleration mechanism and construct a quantum counterpart by imposing time-dependent boundary conditions on solutions of the free Schrödinger equation at the unit interval. We find similiar dynamical features in the sense that limiting KAM curves, respectively purely singular quasienergy spectrum, exist(s) for sufficiently smooth wall oscillations (typically ofC ² type). In addition, we investigate quantum analogs to local approximations of the Fermi map both in its quasiperiodic and irregular phase space regions. In particular, we find pure point q.e. spectrum in the former case and conjecture that random boundary conditions are necessary to model a quantum analog to the chaotic regime of the classical accelerator.     

Pulsed UV laser spectroscopy of thermal Eu2+ ions

An investigation of the radiative lifetimes of several excited Eu²⁺ levels has been performed using a novel ion source for the production of thermal, doubly charged positive ions in a continuous gas discharge. This ionization device, first applied to the generation of Eu²⁺, is suitable also for other elements with similar ionization potential and vapour pressure.     

Magnetic dipolar and electric quadrupolar effects on the Mössbauer spectra of magnetite above the Verwey transition

Mössbauer spectroscopic studies (⁵⁷Fe) of powdered magnetite have been undertaken between 120 K and 880 K. Below the magnetic transition temperature (T _C=839.5 K) three six-line patterns have been fitted to our experimental spectra. The broadening of the B-pattern is explained by two magnetically non-equivalent B-site irons, suggesting broadening due to electron hopping to be negligible. In the paramagnetic state the electric quadrupole splittings of iron at A-and B-sites are found to be constant, independent of temperature, having the values zero and 0.16 mm/s, respectively. The centroid shifts, on the other hand, show above 700 K large deviations from the calculated second order Doppler shift. It is proposed that the deviations arise from a variation in band overlap. The temperature variation of the magnetic fields is found to be proportional to the sublattice magnetization. The difference in the magnetic fields at the two non-equivalent B-sites is measured to be 1.1 T at 310 K.     

Features of hydrogen adsorption on a Ni(997) surface

The change of the initial sticking coefficient for a Maxwellian beam of hydrogen on Ni(997) has been determined as a function of beam temperature and angle of incidence. At low temperatures adsorption is governed by the steps, at high temperatures adsorption on the terraces is more dominant. Adsorption on the terraces is probably an activated process whereas adsorption on the step sites is non-activated. There seems to be little diffusion of undissociated H₂ between steps and terraces.     

Determination of dissolved thiols using solid-phase extraction and liquid chromatographic determination of fluorescently derivatized thiolic compounds

A method employing solid-phase extraction coupled with HPLC separation of thiol-monobromobimane (mBBr) derivatives was developed and optimized to quantify dissolved thiols at concentrations as low as 0.1 nM for glutathione (GSH) and gamma-glutamylcysteine (gammaEC) in natural waters. The reducing reagent, tri-n-butylphosphine (TBP), is needed for complete derivatization. At the optimal addition of TBP ([TBP]/[mBBr] = -0.4-1.6), no interference from copper was observed. The thiol fluorescence signal was totally suppressed if the mole ratio of TBP to mBBr was 2.6 or greater. Consistent recovery of thiols standards in a NaCl solution (0.5 M) was obtained using the Waters HLB reversed-phase resin, and blank levels of GSH and gammaEC were extremely low (less than 0.03 nM). The detection limits for GSH, gammaEC and phytochelatin-2 (PC-2) were 0.03, 0.03, and 0.06 nM, respectively.     

On the kinetics of the generation of point defects in the Si-SiO2 system

The results of studies of the point-defect generation kinetics in the Si-SiO₂ system by means of Electron Spin Resonance (ESR) and InfraRed (IR) absorption spectroscopy are presented. The influence of oxidation conditions (oxidation temperature and time, cooling rate) on the defect structure of the Si-SiO₂ interface has been studied. It is shown that this influence can be explained by the model of point-defect generation proposed by Tan and Gösele, and the structural properties of the Si-SiO₂ system can be improved by an appropriate choice of the oxidation conditions.