交通灯控制下城市主干道双车道多速元胞自动机交通流模型研究

提出一个城市主干道双车道多速元胞自动机交通流模型，此模型采用开放性 边界条件，在考虑诸多实际因素影响情况下，研究了主干道中车站的设置、交通灯绿信比对 车流量和车流速度的影响.计算机模拟所得到的基本图（流量 速度图）能较好地反映在交 通灯控制下城市主干道交通流真实状况. 关键词： 元胞自动机模型 交通流 主干道     

Laser writing techniques for photomask fabrication using a femtosecond laser

Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography. In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side laser writing. Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001     

Chemical Constituents of Ligusticum sinensis Oliv.

The new phenylpropanoid diglycoside ligusinenoside A ( 1 ), and the two new 8,4′‐oxyneolignan(‘8‐O‐4′‐neolignan’) diglycosides ligusinenosides B ( 2 ) and C ( 3 ), together with nine known compounds, were isolated from the rhizomes of Ligusticum sinensis Oliv. The structures of 1 – 3 were elucidated on the basis of spectroscopic analyses.     

Monte Carlo方法研究低能电子束曝光沉积能分布规律

建立一个描述低能电子在多元多层介质中散射的物理模型,运用MonteCarlo方法模拟低能电子在靶体胶衬底中的复杂散射过程,在此基础上通过大量计算研究入射束能、胶层厚度、衬底材料等不同曝光条件对抗蚀剂沉积能密度分布的影响,获得沉积能分布规律:适量的低束能、薄胶层、低原子序数衬底可以使前散射电子对胶中沉积能密度分布的贡献增大、背散射电子的贡献减小,从而提高曝光分辨率. 关键词： 电子束曝光 MonteCarlo方法 低能电子散射 能量沉积     

Dynamical Convergence Trajectory in Networks

It is well known that topology and dynamics are two major aspects to determine the function of a network. We study one of the dynamic properties of a network： trajectory convergence, i.e. how a system converges to its steady state. Using numerical and analytical methods, we show that in a logical-like dynamical model, the occurrence of convergent trajectory in a network depends mainly on the type of the fixed point and the ratio between activation and inhibition links. We analytically proof that this property is induced by the competition between two types of state transition structures in phase space： tree-like transition structure and star-like transition structure. We show that the biological networks, such as the cell cycle network in budding yeast, prefers the tree-like transition structures and suggest that this type of convergence trajectories may be universal.     

Writing Fiber Grating of Different Wavelength Using the Same Phase Mask

Chirped fiber grating was used in dispersion compensator. We tried to use the same phase mask to write fiber grating of different wavelength with two methods to reduce the price of the fiber grating.     

Advancing Mathematical Activity: A Practice-Oriented View of Advanced Mathematical Thinking

The purpose of this article is to contribute to the dialogue about the notion of advanced mathematical thinking by offering an alternative characterization for this idea, namely advancing mathematical activity. We use the term advancing (versus advanced) because we emphasize the progression and evolution of students' reasoning in relation to their previous activity. We also use the term activity, rather than thinking. This shift in language reflects our characterization of progression in mathematical thinking as acts of participation in a variety of different socially or culturally situated mathematical practices. For these practices, we emphasize the changing nature of students' mathematical activity and frame the process of progression in terms of multiple layers of horizontal and vertical mathematizing.     

The function of graphs and gestures in algorithmatization

The purpose of this paper is to present evidence supporting the conjecture that graphs and gestures may function in different capacities depending on whether they are used to develop an algorithm or whether they extend or apply a previously developed algorithm in a new context. I illustrate these ideas using an example from undergraduate differential equations in which students move through a sequence of Realistic Mathematics Education (RME)-inspired instructional materials to create the Euler method algorithm for approximating solutions to differential equations. The function of graphs and gestures in the creation and subsequent use of the Euler method algorithm is explored. If students’ primary goal was algorithmatizing ‘from scratch’, they used imagery of graphing and gesturing as a tool for reasoning. However if students’ primary goal was to make predictions in a new context, they used their previously developed Euler algorithm to reason and used graphs and gestures to clarify their ideas.     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.