On the stereochemistry of photoaddition between α,β-unsaturated ketones and olefins. III.

The α,β-unsaturated ketone $\text{1}$ yields with allene the photocycloadduct $\text{3}$ predicted by our empirical photoaddition rule and the byproduct 7. The formation of this material may be rationalized by the sequence $\text{1}$ → $\text{4}$ → $\text{5}$ → $\text{6}$ → $\text{7}$. The isomeric ketone $\text{2}$ is unreactive under the same conditions, since α addition is prohibited by the rule and β addition is severely blocked.     

Determination of some pharmaceuticals using simple potentiometric sensors of coated-wire type

Summary The preparation of simple potentiometric sensors of the coated-wire type is described and working instructions for their use are given. The sensors prepared from an ordinary aluminium conductor, being simple and cheap, can well serve to monitore the titrations based on ion-pair formation. The application possibilities are discussed and shown as practical examples on analyses of nasal and eye drops containing cationic surfactants or salts of alkaloids.

---

Bestimmung einiger Arzneimittel mit Hilfe einfacher potentiometrischer Sensoren

Zusammenfassung Die Herstellung einfacher potentiometrischer Sensoren mit isoliertem Draht und deren Verwendung wurde beschrieben. Aus einfachem Aluminiumdraht sind sie billig und können für Titrationen auf der Grundlage von Ionenpaar-Bildung dienen. Die Möglichkeiten ihrer Anwendung wurden erörtert und praktiziert für die Untersuchung von Nasen- und Augentropfen mit kationischen Schaumbildnern oder von Alkaloidsalzen.

---

---

According to the Poster XII-23 presented at Euroanalysis V, Cracow, August 1984; the comments inserted into the text are a consequence of the discussion.     

Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation

We have determined the important statistical quantities of the rough boundary between a GaAs single crystal and its oxide film formed by thermal oxidation. Thermal oxidation of the GaAs surfaces was performed at the temperature of 500°C. Using mathematical procedures developed for treating AFM data consisting of a family of the values of the heights of the irregularities of this roughness the values of the important statistical quantities of roughness were determined for 11 samples of the GaAs surfaces created by dissolution of the thermal oxide films originated during thermal oxidation of the smooth GaAs samples (the times of oxidation of these 11 samples were within interval of 20min–8 hours). From the AFM analysis of the roughness of GaAs surfaces it was found that the roughnening of these surfaces was the most pronounced for shorter oxidation times, i.e. for times smaller than about 2 hours.