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911.
Dislocation motion in the real lattice of alloys is highly complex. In a certain temperature range the dynamic strain ageing phenomena have been reported. In this paper the influence of mobile solute atoms (as obstacles) on the motion of dislocation is analysed. Both processes are assumed to be thermally activated. A new model based on this assumption is proposed. The dislocation velocity and the friction stress (due to solute-dislocation interactions) are calculated. A change in the friction stress caused by solute mobility is discussed.  相似文献   
912.
Monoquaternary salt derivatives of benzo[b]-1,4-diazabicyclo[2.2.2]octene react with piperidine and sodium methoxide or 4-tert-butylthiophenoxide to give primarily N,N-disubstituted tetrahydroquinoxalines. Rate constants have been measured for these bimolecular reactions. Based on their levels of reactivity, these quaternary salts behave as typical alkylating agents.For communication 14, see [1].Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 7, pp. 966–972, July, 1987.  相似文献   
913.
Crossed modules have longstanding uses in homotopy theory and the cohomology of groups. The corresponding notion in the setting of categorical groups, that is, categorical crosses modules, allowed the development of a low-dimensional categorical group cohomology. Now, its relevance is also shown here to homotopy types by associating, to any pointed CW-complex (X,∗), a categorical crossed module that algebraically represents the homotopy 3-type of X.  相似文献   
914.
We have performed structural and optical characterizations of the propolis (an organic entity of biological nature) films grown on various non-organic substrates. The films were grown from a propolis melt or a propolis alcohol solution. The crystal structure has been observed in the films precipitated from the solution onto substrates such as an amorphous glass and sapphire or semiconductor indium monoselenide. For any growth method, the propolis film is a semiconductor with the bandgap of 3.07 eV at 300 K that is confirmed by a maximum in photoluminescence spectra at 2.86 eV. We argue that propolis films might be used in various optoelectronic device applications.  相似文献   
915.
GaMnN and Be-codoped GaMnN were grown via molecular beam epitaxy using a single GaN precursor and their structural and magnetic properties were examined. X-ray diffraction and superconducting quantum interference device (SQUID) measurements revealed that the grown layers are homogeneous without precipitates. The saturation magnetization of GaMnN has increased from ∼4 to ∼16 emu/cm3 via codoping of Be. The d–d exchange interaction between Mn atoms was discussed for the ferromagnetism of GaMnN.  相似文献   
916.
Final state interaction effects inpp→ pΛK + andpd3Heη reactions are explored near threshold to study the sensitivity of the cross-sections to thepΛ potential and theηN scattering matrix. The final state scattering wave functions between Λ andp andη and3He are described rigorously. The Λ production is described by the exchange of one pion and aK-meson between two protons in the incident channel. Theη production is described by a two-step model, where in the first step a pion is produced. This pion then produces anη by interacting with another nucleon  相似文献   
917.
The 2000–2006 achievements in the field of synthesis, property examination, and application of proton-exchange membranes are reviewed on the basis of more than 120 papers.  相似文献   
918.
In this paper we introduce and study a weakened form of logarithmic Sobolev inequalities in connection with various others functional inequalities (weak Poincaré inequalities, general Beckner inequalities, etc.). We also discuss the quantitative behaviour of relative entropy along a symmetric diffusion semi-group. In particular, we exhibit an example where Poincaré inequality can not be used for deriving entropic convergence whence weak logarithmic Sobolev inequality ensures the result.   相似文献   
919.
Self-organized ZnAl2O4 nanostructures with the appearance (in SEM) of high aspect ratio horizontal nanowires are grown on uncatalysed c-sapphire by vapour phase transport. The nanostructures grow as three equivalent crystallographic variants on c-sapphire. Raman and cathodoluminescence spectroscopy confirm that the nanostructures are not ZnO and TEM shows that they are the cubic spinel, zinc aluminate, ZnAl2O4, formed by the reaction of Zn and O with the sapphire substrate.  相似文献   
920.
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