Gallium Nitride Room Temperature α Particle Detectors

Gallium Nitride （GaN） room temperature α particle detectors are fabricated and characterized, whose device structure is Schottky diode. The current-voltage （I- V） measurements reveal that the reverse breakdown voltage of the detectors is more than 200 V owing to the consummate fabrication processes, and that the Schottky barrier and ideal factor of the detectors are 0.64 eV and 1.02, respectively, calculated from the thermionic transmission model. ^241Am α particles pulse height spectra from the GaN detectors biased at -8 V is obviously one Gauss peak located at channel 44 with the full width at half maximum （FWHM） of 15.87 in channel. One of the main reasons for the relatively wider FWHM is that the air between the detectors and isotope could widen the spectrum.     

分散有ZnS:Mn2+纳米超微粒的有机薄膜的制备和光学性质

近年来,半导体超微粒的合成及光物理性质研究已成为活跃的领域.由于量子尺寸效应引起的量子点能级结构的变化及其光学性质已经作了大量研究[1-4].1993年,Bhar-gava首次报导了化学反应合成的ZnS Mn超微粒的光学性质[5],掺杂半导体纳米材料的出现,为纳米科学的研究开辟了新的领域.     

纳米混合分子聚集体材料中弗兰克尔激子迁移的相位弛豫

在有机染料ＰＩＣ－１中引入其衍生物ａｚａＰＩＣ－Ｉ形成能量势垒，改变在混合分子聚集体中ＰＩＣ－Ｉ的Ｊ－聚集体的实体长度。用双调制外差检测的累积光子回波技术研究了相干弗兰克尔激子失相过程。观测到激子失相时间Ｔ２随ａｚａＰＩＣ－１克分子数的增大从６０ｐｓ变为２２４ｐｓ。     

Dispersion of nanospheres on large glass substrate by amorphous or polycrystalline silicon deposition for localized surface plasmon resonance

Nanosphere lithography is a cost-effective way to fabricate noble metal nanostructures for plasmonics. However, dispersing nanospheres on a large area of glass substrate is a difficulty encountered when transparent substrate is required in applications such as localized surface plasmon resonance or surface enhanced Raman spectroscopy. Because poly(diallyldimethyl ammonium chloride) (PDDA) on silicon surface introduces a force that can disperse nanospheres on silicon, in this article, we modify the glass surface through amorphous or polycrystalline silicon deposition and thus well disperse polystyrene or silica nanospheres over a glass area of more than 2 cm × 2 cm. Transmission loss of the glass substrate caused by amorphous or polycrystalline silicon deposition is analyzed with good agreement to experimental spectra, and localized surface plasmon resonance signals generated from the gold nanostructures fabricated on these substrates are measured and yield a sensitivity of 317 nm/RIU, which prove the feasibility and effectiveness of our method.     

Ca(BH4)2络合物电子结构及热力学稳定性的第一性原理研究

利用第一性原理研究了低温及高温相Ca(BH4)2络合物的电子结构、晶格振动及其反应焓。计算结果表明：低温及高温相Ca(BH4)2中Ca+2与[BH4]－以离子键形式相结合,[BH4]－离子中B原子和H原子以共价键形式相结合,对该共价键有贡献的主要是B原子的2p轨道电子,H原子的1s轨道电子。Ca(BH4)2可能的反应路径为：Ca(BH4)2→2CaH2+CaB6+10H2,该反应在300K下反应焓为43.22 kJ/mol H2。拉伸B—H键所对应的声子频率较高,其值为2360～2500cm-1,这可能是导致B—H键断裂释放氢气需要较高温度的主要原因之一。     

A revisit to the neutron skin thickness of neutron-rich nuclei in the statistical abrasion ablation model

The cross sections of the fragments produced in the projectile fragmentation reactions of the even calcium isotopes from A=36 to A=52 are calculated using the statistical abrasion ablation model.The neutron skin thickness are studied by investigating the fragments isotopic cross section distributions.The neutron-skin thicknesses of the calcium isotopes have a good linear correlation to the peak positions of their fragment isotopic cross section distributions.The correlation between the neutron skin thickness and the neutron density distributions of 48 Ca is investigated by introducing a parameter to adjust the diffuseness parameter in the fermi-type density distribution.     

高质量多孔氧化铝模板的制备

在草酸电解液中研究了阳极氧化法制备多孔氧化铝模板(AAO模板)。采用场发射扫描电子显微镜对多孔模板的形貌进行表征,结果表明:模板孔的分布均匀有序,孔径在40~70 nm;电解液浓度、氧化电压、氧化温度和氧化时间都会影响模板的形态;不经过高温退火及抛光也可以制得规则排布的多孔AAO模板。X射线衍射分析表明:氧化铝膜的主要成分为非晶态Al2O3。     

电化学在ICF靶制备中的新应用

报道了近年来在电解加工技术制备理论密度金属薄膜和电沉积技术制备金属纳米丝阵列材料等领域取得的进展。采用硫酸+甲醇电解液体系获得了表面粗糙度小于30nm的钛膜。采用阳极氧化铝模板电沉积技术制备出长度约10μm、直径约300nm的金纳米丝阵列。主要讨论了电解液配方及电解加工参数的选择,金属纳米丝直径与长度的控制等问题。     

无标度网络上队列资源分配研究

研究了节点队列资源有限的条件下,无标度网络上的信息流动力学过程,发现了网络由自由流通到拥塞的相变现象,提出了一种基于节点度的队列资源分配模型.模型的核心是使节点i的队列长度与kβi成正比(ki为节点i的度,β为分配参数).仿真结果表明,在网络使用最短路径算法进行信息包传送的条件下,β近似等于1.25时队列资源分配最合理,网络容量最大,且该最佳值与队列总资源多少以及网络的规模无关.     

局域椭圆偏振光束强聚焦性质的研究

数值计算了局域椭圆偏振光束强聚焦时在焦平面上的横向场强分布、纵向场强分布、横向能流以及纵向角动量分布.结果显示在焦平面上光束总的纵向角动量为零,但在不同象限光束具有不同方向的纵向角动量.当相位延迟角度在0到π之间变化时横向场强分布基本不变,但纵向场强分布有很明显的变化.液晶相位延迟器由外部电压控制,使其相位延迟角度能在0到π之间可以连续取值.因而液晶相位延迟器的外接电压可以实现对焦平面上的纵向场强以及纵向角动量的实时调控.