Structure of 72,74Se at high spin

Lifetimes of high spin states up to { }=22⁺ in the yrast positive parity bands have been measured to investigate the shape evolution with increasing spin in ^{72, 74}Se. The Q _t values derived from these measurements indicate that prolate shape stabilizes for ⁷²Se, while a triaxial shape develops for ⁷⁴Se at higher spins. Comparison of the observed trend in Q _t with spin for ^{72, 74}Se with that of the corresponding kryptones isotones emphasizes the stability provided by N=38 prolate shell gap even at high rotational frequency.     

N.M.R. solid echoes in systems of dipolar-coupled inequivalent spins-1 or dipolar-coupled inequivalent pairs of spins-1/2

Proton solid-echo transverse relaxation functions for many thermotropic and lyotropic mesophases, mapped by measurement of the echo amplitude S_yx (t′ = τ) as a function of τ using a P_y (90°)-τ-P_x (90°)-t′ sequence, yield gaussian behaviour of the form exp [-½M ^E ₂τ²] for decays up to 20–30 per cent of the value at τ = 0. M ^E ₂, the second moment for the dipolar interactions between the spin-½ pairs, is related to the van Vleck second moment M ^VV ₂ through a factor f. Whilst experiments suggested a value of 0·70–0·72 for f = M ^E ₂/M ^VV ₂, simple models that ignored the non-equivalence of the dipolar-coupled spin-pairs had predicted f = 0·65. In this paper we derive an exact analytic expression for the spin response of a model of two dipolar-coupled inequivalent spins-1 to the pulse sequence P_y (90°)-τ-P _α(β)-t′, and show that the present model, with the quenching of the spin-flip terms of the dipolar hamiltonian, resolves the afore-mentioned discrepancy. We also reconcile the differences between the experimental and the earlier predicted values of f for deuteron N.M.R. spin echoes in perdeuterated solids.     

Thickness dependence of optoelectrical properties of tungsten-doped indium oxide films

Pulsed laser deposition technique is used for deposition of tungsten-doped indium oxide films. The effect of film thickness on structural, optical and electrical properties was studied using X-ray diffraction (XRD), atomic force microscopy, UV-visible spectroscopy, and electrical measurements. X-ray diffraction study reveals that all the films are highly crystalline and oriented along (2 2 2) direction and the film crystallinity increases with increase in film thickness. Atomic force microscopy analysis shows that these films are very smooth with root mean square surface roughness of ∼1.0 nm. Bandgap energy of the films depends on thickness and varies from 3.71 eV to 3.94 eV. It is observed that resistivity of the films decreases with thickness, while mobility increases.     

Effect of substrate temperature on properties of multilayer thin film based on ZnO and Mo-doped indium oxide

Zinc oxide/molybdenum-doped indium oxide/zinc oxide (ZnO/IMO/ZnO) multilayer thin films are grown using pulsed laser deposition technique. The effect of substrate temperature on structural, optical, and electrical properties of multilayer films is studied. It is observed that films grown at high substrate temperature are oriented along (0 0 2) and (2 2 2) direction for ZnO and IMO respectively. The crystallinity of these films increases with increase in substrate temperature. It is also seen that conductivity, carrier concentration, and mobility increase with increase in temperature. The multilayer film grown at 500 °C has low resistivity (7.67 × 10⁻⁵ Ω cm), high carrier concentration (3.90 × 10²⁰ cm⁻³), and high mobility (209 cm²/Vs).     

Structural, optical and electrical characterization of highly conducting Mo-doped In2O3 thin films

Highly conducting and transparent thin films of molybdenum-doped indium oxide were deposited on quartz by pulsed laser deposition. The effect of growth temperature and oxygen partial pressure on the structural, optical and electrical properties was studied. We find that the film transparency depends on the growth temperature. The average transmittance of the films grown at different temperatures is in range of 48-87%. The X-ray diffraction results show that the films grown at low temperature are amorphous while the films grown at higher temperature are crystalline. Electrical properties are found to be sensitive to both the growth temperature and oxygen pressure. Resistivity of the films decreases from 1.3 × 10⁻³ Ω cm to 8.9 × 10⁻⁵ Ω cm while mobility increases from 9 cm²/V s to 138 cm²/V s as the growth temperature increases from room temperature to 700 °C. However, with increase in oxygen pressure, resistivity increases but the mobility decreases after attaining a maximum. The temperature-dependent resistivity measurements show transition form semiconductor to metallic behavior. The film grown at 500 °C under an oxygen pressure of 1.0 × 10⁻³ mbar is found to exhibit high mobility (250 cm²/V s), low resistivity (6.7 × 10⁻⁵ Ω cm), and relatively high transmittance (∼90%).