Measurement of στ product of solid state laser materials by an alternative method: Application to Nd3+ doped YVO4 crystal for 4 F 3/2→4 I 11/2 transition

In this paper an alternative approach for measurement of στ product for ⁴ F _3/2→⁴ I _11/2 transition of Nd³⁺ doped YVO₄ crystal is reported. In this method a microchip laser is formed by keeping a small piece of the sample in plane-plane resonator and a diode laser (808 nm) is used for pumping. The pump power induced thermal lensing effect is used to make the cavity stable. The cavity mode area is estimated by measuring the thermal lens focal length at the threshold and the average pump area is measured by Gaussian fit to the intensity profiles of the pump beam. The value of στ product of Nd:YVO₄ crystal obtained by this method is within 10% of the reported values. The advantage of this method is that it is a simple method for direct measurement of στ product of laser crystals.     

High-spin structure of yrast-band in 78Kr

Lifetime of levels up to 22⁺, have been measured in ⁷⁸Kr and an oblate shape is assigned to the ground state using the CSM and the configuration dependent shell correction calculations. Calculations further show that ⁷⁸Kr is highly γ-soft nucleus. The experimental Q _t values coupled with theoretical calculations indicate an oblate shape for ⁷⁸Kr at low spins and triaxial shape at higher spins