Theoretical Analysis of Current Crowding Effect in Metal/AIGaN/GaN Schottky Diodes and Its Reduction by Using Polysilicon in Anode

There exists a current crowding effect in the anode of AIGaN/GaN heterojunction Schottky diodes, causing local overheating when working at high power density, and undermining their performance. The seriousness of this effect is illustrated by theoretical analysis. A method of reducing this effect is proposed by depositing a polysilicon layer on the Schottky barrier metal. The effectiveness of this method is provided through computer simulation. Power consumption of the polysilicon layer is also calculated and compared to that of the Schottky junction to ensure the applicability of this method.     

Effect of Ⅲ/Ⅴ Ratio of HT-AIN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

We investigate the effect of A/N ratio of the high temperature （HT） AIN buffer layer on polarity selection and electrical quality of GaN films grown by radio frequency molecular beam epitaxy. The results show that low Al/N ratio results in N-polarity GaN films and intermediate Al/N ratio leads to mixed-polarity GaN films with poor electrical quality. GaN films tend to grow with Ga polarity on Al-rich AIN buffer layers. GaN films with different polarities are confirmed by in-situ reflection high-energy electron diffraction during the growth process. Wet chemical etching, together with atomic force microscopy, also proves the polarity assignments. The optimum value for room-temperature Hall mobility of the Ga-polarity GaN film is 703cm^2/V.s, which is superior to the N-polarity and mixed-polarity GaN films.     

THE PHOTOCHEMICAL SYNTHESIS OF THE PYRIDINE ADDUCT OF TETRAPHENYLPORPHYRINATORHODIUM(Ⅱ)AND THE MECHANISM OF PHOTOCHEMICAL REACTION

A new rhodium(Ⅱ)porphyrin complex was isolated by chromatography from the photochemical reac-tion of(μ—tetraphenylporphyrinato)bis[dicarbonylrhodium(Ⅰ)]with pyridine in benzene and has been charac-terized.From the results,the reaction mechanism is proposed.     

非接触体积测量实验系统

将物体体积参量测量转变成气体压力测量，可以实现体积非接触测量．本文设计了非接触体积测量实验系统，并分析了系统测量的分辨率及精度．     

关于微波感应直流电压现象的理论

在一个开路(即未和直流电源相联)的约瑟夫逊隧道结上以微波辐照,隧道结的两端便出现一定的直流电压。这就是微波感应电压现象。 文献[1]报道了Chen等人的实验结果。他们采用尺寸很小的Pb-PbOx-Pb结。隧道结的结平面面积约10~(-6)cm~2;结电阻为1Ω;临界电流I_c(在1.4K时)为1.1mA.在10GHz的微波辐照下,结两端出现的直流电压V_n是断续的,和微波频率υ在如下关系:     

超导临界温度理论(Ⅰ)

本文求出了Eliashberg方程在T=T_c时的解,得到了下面的临界温度级数表示式:T_c=α₀(μ^*)(λ〈ω²〉)^1/2{1+1/λα₁(μ^*)〈ω⁴>/〈ω²>²+1/λ²(α₂₁(μ^*)〈ω⁶>/〈ω²>³+α₂₂(μ^*)〈ω⁴>²/〈ω²>⁴) +1/λ³(α₃₁(μ^*)〈ω⁸>/〈ω²>⁴+α₃₂(μ^*)(〈ω⁴>〈ω⁶>)/〈ω²>⁵)+α₃₃(μ^*)〈ω⁴>³/〈ω²>⁶+…},其中α₀(μ^*),α₁(μ^*)等仅是μ^*的函数。新的T_c公式表明了,T_c不仅依赖于λ、μ^*和〈ω²〉,而且依赖于有效声子谱α²F(ω)的各级矩〈ω²ⁿ〉。     

聚合物水凝胶体积相变过程中自发生成的新图案

聚合物水凝胶在 p H、温度等外界条件变化之下可发生连续或不连续的体积相变[1～ 6] .近年来 ,国际学术界认识到 ,凝胶的体积变化并不总是均匀地发生 ,伴随着剧烈的体积相变过程 ,凝胶中往往会呈现丰富多彩的图案[7～ 10 ] .这些图案已引起国际高分子学术界、包括研究材料力学行为和水母等“透明状动物”的科学家的极大兴趣 [11] .已发现了凝胶膨胀过程中的准六方凸起 [7]、凝胶急剧收缩过程中的竹节状条纹等图案 [8] .本文首次报道了凝胶的螺旋状图案 .Fig.1　 Typical Bamboo-like patterns formed in hydrogelshrinking after immersed…     

界面聚合法制备正二十烷微胶囊化相变储热材料

用界面聚合的方法,以甲苯-2,4-二异氰酸酯(TDI)和己二胺(HDA)为反应单体,非离子表面活性剂聚乙二醇壬基苯基醚(OP)为乳化剂,合成了正二十烷为相变材料的聚脲包覆微胶囊. 结果表明,二异氰酸酯和己二胺按质量比为1.5∶ 0.8进行反应. 空心微胶囊的直径约为0.2 μm,含正二十烷微胶囊直径为2~6 μm. 红外光谱分析证明, 囊壁聚脲是由TDI及HDA 2种单体形成. 正二十烷包裹效率为65%~80%. 微胶囊的熔点接近囊芯正二十烷的熔点,而其储热量在壁材固定时随囊芯的量而变. 热重分析结果表明,囊芯正二十烷、含正二十烷的微胶囊以及壁材聚脲,能够耐受的温度分别约为130、165及250 ℃.