Translational-rotational interaction in dynamics and thermodynamics of a two-dimensional atomic crystal with molecular impurities

The interaction between the rotational degrees of freedom of a diatomic impurity molecule and phonon excitations of a two-dimensional atomic matrix commensurate to the substrate is investigated theoretically. It is shown that the translational-rotational interaction leads to renormalization of the crystal field constants and a change in the form of the operator for the rotational kinetic energy as compared to the corresponding expression for a free rotator. The contribution from the rotational degrees of freedom of impurities to the low-temperature heat capacity of a diluted solution of diatomic molecules in the two-dimensional atomic matrix is calculated. The possibility of experimentally observing the predicted effects is discussed.     

Application of ultrafine-dispersed diamonds in electroplating

The results obtained upon the electrochemical deposition of composite coatings containing ultrafine-dispersed diamonds produced by detonation synthesis are generalized. The main advantages of such coatings over the well-known composite electrochemical coatings are revealed.     

High-efficiency erbium ion luminescence in silicon nanocrystal systems

The photoluminescence spectra and kinetics of both erbium-doped and undoped multilayer structures of quasi-ordered silicon nanocrystals in a silicon dioxide matrix were studied. It was shown that the optical excitation energy of silicon nanocrystals 2–3 nm in size can be practically completely transferred to Er³⁺ ions in the oxide surrounding the nanocrystals, with its subsequent radiation at 1.5 μm. Possible reasons for the high excitation efficiency of the Er³⁺ ions are discussed, and the conclusion is drawn that the F?rster mechanism is dominant in the energy transfer processes occurring in these structures. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 105–109. Original Russian Text Copyright ? 2004 by Kashkarov, Kamenev, Lisachenko, Shalygina, Timoshenko, Schmidt, Heitmann, Zacharias.     

Prediction of the properties of two-phase composites with a piezoactive component

The effective dielectric, piezoelectric, and elastic constants of two-phase macroscopically piezoactive 3-0 and 3-3 composites are calculated. It is assumed that one of the components is a polarized ferroelectric ceramic material and the other is an inactive material with variable elastic properties. The limiting case when the elastic compliances of the inactive material tend to infinity (porous ferroelectric ceramics) is considered. The adequacy of this model to production technologies of piezoelectric composites is discussed. Computational results are compared with experimental data.     

Ultrashort electron beam and volume high-current discharge in air under the atmospheric pressure

Conditions are studied under which an electron beam and a volume discharge with a subnanosecond rise time of a voltage pulse are produced in air under atmospheric pressure. It is shown that the electron beam appears in a gas-filled diode at the front of the voltage pulse in ∼0.5 ns, has a half-intensity duration of ≤0.4 ns and an average electron energy of ∼0.6 of the voltage across the gas-filled diode, and terminates when the voltage across the gap reaches its maximum value. The electron beam with an average electron energy of 60 to 80 keV and a current amplitude of ≥70 A is obtained. It is assumed that the electron beam is formed from electrons produced in the gap due to gas ionization by fast electrons when the intensity of the field between the front of the expanding plasma cloud and the anode reaches its critical value. A nanosecond volume discharge with a specific power input of ≥400 MW/cm³, a density of the discharge current at the anode of up to 3 kA/cm², and specific energy deposition of ∼1 J/cm³ over 3 to 5 ns is created.     

Electron Metal-Dielectric Phase Transitions in Semiconductors under Pressure

The effect of uniform pressure on the character of metal-dielectric transitions in compensated weakly- and highly doped semiconductors (WHDCS) is considered. The influence of hybridization of resonance quasilocalized impurity states with band continuum states on the transition is shown. Minimum metallic conductivities in p-CdSnAs₂ are determined for Mott and Anderson transitions. Special features of the metal-dielectric transformation in weakly-doped narrow- and high energy-gap semiconductors are discussed for the case of hydrogen-like impurities. Anderson localization in WHDCS is also considered. Phase diagrams are presented.